N-Channel Reduced Fast Switching MOSFET rDS(on) 0.008 0.011

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N-Channel Reduced Fast Switching MOSFET rDS(on) 0.008 0.011

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Si7860DP
N-Channel Reduced Fast Switching MOSFET
rDS(on)
0.008 0.011
TrenchFETr Power MOSFET Optimized High Efficiency Thermal Resistance PowerPAKr Package with 1.07-mm Profile 100% Tested
APPLICATIONS
Buck Converter High Side Side Synchronous Rectifier Secondary Rectifier
PowerPAK SO-8
6.15
5.15
Bottom View Ordering Information: Si7860DP-T1
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa Operating Junction Storage Temperature Range 25_C 70_C 25_C 70_C
Symbol
Tstg
secs
Steady State
Unit
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction Ambient (MOSFET)a Junction-to-Ambient Maximum Junction-to-Case (Drain) Notes Surface Mounted Board. Document Number: 71854 S-32040-Rev. 13-Oct-03 www.vishay.com Steady State Steady State
Symbol
RthJA RthJC
Typical
Maximum
Unit
_C/W
Si7860DP
MOSFET SPECIFICATIONS 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) VGS, 70_C 0.0066 0.0090 0.70 0.008 0.011 "100
Symbol
Test Condition
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate-Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time td(on) td(off) di/dt A/ms VGEN
Notes Pulse test; pulse width duty cycle Guaranteed design, subject production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
thru
Transfer Characteristics
Drain Current Drain Current
125_C 25_C -55_C
Drain-to-Source Voltage www.vishay.com
Gate-to-Source Voltage Document Number: 71854 S-32040-Rev. 13-Oct-03
Si7860DP
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.015
On-Resistance Drain Current
2500
Capacitance
DS(on) On-Resistance
0.012 0.009 0.006 Capacitance (pF)
2000
Ciss
1500
1000 Coss Crss
0.003
0.000
Drain Current
Drain-to-Source Voltage
Gate-to-Source Voltage
Gate Charge
2.00 1.75 1.50 1.25 1.00 0.75 0.50
On-Resistance Junction Temperature
DS(on) On-Resistance (Normalized)
Total Gate Charge (nC)
Junction Temperature (_C)
Source-Drain Diode Forward Voltage
0.040
On-Resistance Gate-to-Source Voltage
150_C
DS(on) On-Resistance
0.032
Source Current
0.024
25_C
0.016 0.008
0.00 Source-to-Drain Voltage Document Number: 71854 S-32040-Rev. 13-Oct-03
0.000
Gate-to-Source Voltage
www.vishay.com
Si7860DP
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
GS(th) Variance
Single Pulse Power, Juncion-To-Ambient
Power
-0.3
-0.6
-0.9
0.001 0.01 Time (sec)
Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient Thermal Impedance
Duty Cycle
0.05 0.02 Single Pulse 0.01 Square Wave Pulse Duration (sec)
Notes:
Duty Cycle,
Unit Base RthJA 125_C/W PDMZthJA(t) Surface Mounted
Normalized Thermal Transient Impedance, Junction-to-Case
Normalized Effective Transient Thermal Impedance
Duty Cycle
0.05 0.02 Single Pulse 0.01 Square Wave Pulse Duration (sec)
www.vishay.com
Document Number: 71854 S-32040-Rev. 13-Oct-03

N-Channel Reduced Fast Switching MOSFET rDS(on) 0.008 0.011

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