µPA1705 DESCRIPTION This product N-Channel Field Effect Tran

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µPA1705 DESCRIPTION This product N-Channel Field Effect Tran

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FIELD EFFECT TRANSISTOR
µPA1705
DESCRIPTION
This product N-Channel Field Effect Transistor designed DC/DC Converters power management application notebook computers.
PACKAGE DRAWING (Unit
Source Gate Drain
FEATURES
Super on-state resistance
1.44
RDS(on)1 19.0 TYP. (VGS RDS(on)2 30.0 TYP. (VGS Ciss Ciss TYP. Built-in protection diode Small surface mount package (Power SOP8)
Max.
5.37 Max.
±0.3
+0.10 -0.05
0.15
0.05 Min.
±0.2 0.10
1.27 0.40
0.78 Max. 0.12
+0.10 -0.05
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
µPA1705G
ABSOLUTE MAXIMUM RATINGS terminals connected.)
Drain Source Voltage (VGS Gate Source Voltage (VDS Drain Current (DC) Drain Current (Pulse)
Note1 Note2
VDSS VGSS ID(DC) ID(pulse) Tstg
Gate Body Diode Drain
EQUIVALENT CIRCUIT
Total Power Dissipation Channel Temperature Storage Temperature
Gate Protection Diode
Notes Duty cycle Mounted ceramic substrate 1200 Remark
Source
diode connected between gate source transistor serves protector against ESD. When this device actually used, additional protection circuit externally required voltage Exceeding rated voltage applied this device.
information this document subject change without notice. Before using this document, please confirm that this latest version.
devices/types available every country. Please check with local representative availability additional information.
Document G12712EJ1V0DS00 (1st edition) Date Published February 1999 CP(K) Printed Japan
1998, 1999
µPA1705
ELECTRICAL CHARACTERISTICS terminals connected.)
CHARACTERISTICS Drain Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) IDSS IGSS Ciss Coss Crss td(on) td(off) VF(S-D) TEST CONDITIONS VGS(on) di/dt 100A/µs MIN. TYP. MAX. UNIT
TEST CIRCUIT SWITCHING TIME
D.U.T.
Wave Form
TEST CIRCUIT GATE CHARGE
D.U.T.
(on)
Duty Cycle
Wave Form
(on) (off) toff
Data Sheet G12712EJ1V0DS00
µPA1705
TYPICAL CHARACTERISTICS terminals connected.)
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA Percentage Rated Power Total Power Dissipation Mounted ceramic substrate 1200 TOTAL POWER DISSIPATION AMBIENT TEMPERATURE
Ambient Temperature FORWARD BIAS SAFE OPERATING AREA
ID(pulse)
Ambient Temperature
Remark Mounted ceramic substrate 2000
Drain Current
ID(DC)
Single Pulse
Drain Source Voltage
TRANSIENT THERMAL RESISTANCE PULSE WIDTH rth(t) Transient Thermal Resistance °C/W
Mounted ceramic substrate 1200 Single Pulse Channel Ambient 1000
0.01 0.001
Pulse Width
Data Sheet G12712EJ1V0DS00
µPA1705
FORWARD TRANSFER CHARACTERISTICS Pulsed DRAIN CURRENT DRAIN SOURCE VOLTAGE Pulsed
Drain Current
Drain Current
0.01 Gate Source Voltage Drain Source Voltage
Forward Transfer Admittance
RDS(on) Drain Source On-State Resistance
FORWARD TRANSFER ADMITTANCE DRAIN CURRENT Pulsed
DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE Pulsed
Drain Current
Gate Source Voltage
RDS(on) Drain Source On-State Resistance
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT Pulsed VGS=10 Drain Current
GATE SOURCE CUTOFF VOLTAGE CHANNEL TEMPERATURE
VGS(off) Gate Source Cutoff Voltage
Channel Temperature
Data Sheet G12712EJ1V0DS00
µPA1705
DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE
RDS(on) Drain Source On-State Resistance
SOURCE DRAIN DIODE FORWARD VOLTAGE Pulsed
Diode Forward Current
Source Drain Voltage
Channel Temperature CAPACITANCE DRAIN SOURCE VOLTAGE
Ciss, Coss, Crss Capacitance td(on), td(off), Switching Time
SWITCHING CHARACTERISTICS td(off) td(on)
Ciss Coss Crss
VGS(on)
Drain Source Voltage
Drain Current
REVERSE RECOVERY TIME DRAIN CURRENT
Reverse Recovery Time
di/dt
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Drain Source Voltage
Gate Source Voltage
Diode Current
Gate Charge
Data Sheet G12712EJ1V0DS00
µPA1705
[MEMO]
Data Sheet G12712EJ1V0DS00
µPA1705
[MEMO]
Data Sheet G12712EJ1V0DS00
µPA1705
information this document subject change without notice. Before using this document, please confirm that this latest version. part this document copied reproduced form means without prior written consent Corporation. Corporation assumes responsibility errors which appear this document. Corporation does assume liability infringement patents, copyrights other intellectual property rights third parties arising from device described herein other liability arising from such device. license, either express, implied otherwise, granted under patents, copyrights other intellectual property rights Corporation others. Descriptions circuits, software, other related information this document provided illustrative purposes semiconductor product operation application examples. incorporation these circuits, software, information design customer's equipment shall done under full responsibility customer. Corporation assumes responsibility losses incurred customer third parties arising from these circuits, software, information. While Corporation been making continuous effort enhance reliability semiconductor devices, possibility defects cannot eliminated entirely. minimize risks damage injury persons property arising from defect semiconductor device, customers must incorporate sufficient safety measures design, such redundancy, fire-containment, anti-failure features. devices classified into following three quality grades: "Standard", "Special", "Specific". Specific quality grade applies only devices developed based customer designated "quality assurance program" specific application. recommended applications device depend quality grade, indicated below. Customers must check quality grade each device before using particular application. Standard: Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade devices "Standard" unless otherwise specified NEC's Data Sheets Data Books. customers intend devices applications other than those specified Standard quality grade, they should contact sales representative advance.

µPA1705 DESCRIPTION This product N-Channel Field Effect Tran

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