µPA1758 DESCRIPTION This product Dual N-Channel Field Effect

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µPA1758 DESCRIPTION This product Dual N-Channel Field Effect

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FIELD EFFECT TRANSISTOR
µPA1758
DESCRIPTION
This product Dual N-Channel Field Effect Transistor designed power management application notebook computers, Li-ion battery application.
FEATURES
Dual chips small package gate drive type on-state resistance RDS(on)1 (MAX.) (VGS RDS(on)2 (MAX.) (VGS Ciss Ciss 1100 (TYP.) Built-in protection diode Small surface mount package (Power SOP8)
PACKAGE DRAWING (Unit
Source Gate Drain Source Gate Drain 5.37 Max.
+0.10 -0.05
±0.3
0.15
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
Max.
1.44
0.05 Min.
±0.2 0.10
1.27 0.40
0.78 Max. 0.12
µPA1758G
+0.10 -0.05
ABSOLUTE MAXIMUM RATINGS
Drain Source Voltage (VGS Gate Source Voltage (VDS Drain Current (DC) Drain Current (Pulse)
Note1 Note2 Note2
EQUIVALENT CIRCUIT
±12.0 ±6.0
Gate Body Diode Drain
VDSS VGSS ID(DC) ID(pulse) Tstg
Total Power Dissipation unit) Total Power Dissipation unit) Channel Temperature Storage Temperature
Gate Protection Diode
Source
Notes Duty cycle Mounted ceramic substrate 2000 Remark diode connected between gate source transistor serves protector against ESD. When this device actually used, additional protection circuit externally required voltage exceeding rated voltage applied this device.
information this document subject change without notice.
Document D12911EJ1V0DS00 (1st edition) Date Published October 1998 CP(K) Printed Japan
1998
µPA1758
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS Drain Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode forward Voltage VGS(off) IDSS IGSS Ciss Coss Crss td(on) td(off) VF(S-D) VGS(on) TEST CONDITIONS ±12.0 1100 15.0 MIN. TYP. MAX. UNIT
TEST CIRCUIT SWITCHING TIME
D.U.T.
Wave Form
TEST CIRCUIT GATE CHARGE
D.U.T.
(on)
Duty Cycle
Wave Form
(on) (off) toff
µPA1758
TYPICAL CHARACTERISTICS
TRANSIENT THERMAL RESISTANCE PULSE WIDTH
rth(t) Transient Thermal Resistance °C/W
0.01 0.001
Mounted ceramic Single Pulse substrate 2000mm2 1.1mm Single Pulse unit
Pulse Width
RDS(on) Drain Source On-state Resistance
FORWARD TRANSFER ADMITTANCE DRAIN CURRENT DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE Pulsed
|yfs| Forward Transfer Admittance
TA=-50°C TA=-25°C TA=25°C
VDS=10V Pulsed
ID=3
TA=75°C TA=125°C TA=150°C
Drain Current
Gate Source Voltage
RDS(on) Drain Source On-state Resistance
VGS(off) Gate Source Cut-off Voltage
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT Pulsed VGS=4.5V VGS=2.5V
GATE SOURCE CUTOFF VOLTAGE CHANNEL TEMPERATURE VDS=10 ID=1
Drain Current
Channel Temperature
µPA1758
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE
SOURCE DRAIN DIODE FORWARD VOLTAGE Pulsed
Diode Forward Current
VGS=2.5V VGS=2.5V
VGS=4.5V
VGS=0V
Channel Temperature
Source Drain Voltage
CAPACITANCE DRAIN SOURCE VOLTAGE 10000
SWITCHING CHARACTERISTICS
td(on), td(off), Switching Time
Ciss, Coss, Crss Capacitance
td(off) td(on)
Ciss 1000 Coss
Crss
VDS=15V VGS=4V Drain Current
Drain Source Voltage
REVERSE RECOVERY TIME DRAIN CURRENT
Reverse Recovery Diode
Drain Source Voltage
VDD=24 VDD=15 VDD=6
Drain Current
Gate Charge
Gate Source Voltage
di/dt =100A/µ
DYNAMIC INPUT/OUTPUT CHARACTERISTICS ID=6.0
µPA1758
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA
TOTAL POWER DISSIPATION AMBIENT TEMPERATURE
Total Power Dissipation W/package
unit unit Mounted ceramic substrate
Percentage Rated Power
Ambient Temperature
Ambient Temperature
FORWARD BIAS SAFE OPERATING AREA
Mounted ceramic substrate ID(pulse) 2000mm unit ID(DC)=6
DRAIN CURRENT DRAIN SOURCE VOLTAGE Pulsed
Drain Current
Drain Current
VGS=4.5
VGS=2.5
Single Pulse
Drain Source Voltage
Drain Source Voltage
FORWARD TRANSFER CHARACTERISTICS Pulsed
Drain Current
TA=150°C TA=125°C TA=75°C TA=25°C TA=-25°C TA=-50°C
Gate Source Voltage
µPA1758
[MEMO]
µPA1758
[MEMO]
µPA1758
[MEMO]
part this document copied reproduced form means without prior written consent Corporation. Corporation assumes responsibility errors which appear this document. Corporation does assume liability infringement patents, copyrights other intellectual property rights third parties arising from device described herein other liability arising from such device. license, either express, implied otherwise, granted under patents, copyrights other intellectual property rights Corporation others. While Corporation been making continuous effort enhance reliability semiconductor devices, possibility defects cannot eliminated entirely. minimize risks damage injury persons property arising from defect semiconductor device, customers must incorporate sufficient safety measures design, such redundancy, fire-containment, anti-failure features. devices classified into following three quality grades: "Standard", "Special", "Specific". Specific quality grade applies only devices developed based customer designated "quality assurance program" specific application. recommended applications device depend quality grade, indicated below. Customers must check quality grade each device before using particular application. Standard: Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade devices "Standard" unless otherwise specified NEC's Data Sheets Data Books. customers intend devices applications other than those specified Standard quality grade, they should contact sales representative advance. Anti-radioactive design implemented this product.

µPA1758 DESCRIPTION This product Dual N-Channel Field Effect

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