ADE-208-754D Edition February 1999 Features on-resistance drive c

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ADE-208-754D Edition February 1999 Features on-resistance drive c

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HAT1043M
ADE-208-754D Edition February 1999 Features
on-resistance drive current High density mounting gate drive device driven from source
Outline
TSOP-6
Source Gate Drain
HAT1043M
Absolute Maximum Ratings 25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Symbol VDSS VGSS D(pulse)
Note Note Note Note
Ratings -4.4 -17.6 -4.4 1.05 +150
Unit
(pulse)
(continuous) Channel temperature Storage temperature Note: Tstg
duty cycle When using alumina ceramic board mm), 25°C When using alumina ceramic board mm), 25°C
Electrical Characteristics 25°C)
Item Symbol -0.4 |yfs| Ciss Coss Crss d(on) d(off) -0.95 ±0.1 -1.4 -1.23 Unit -4.4 -4.4 diF/ Test Conditions -4.5 Note -2.5 Note Note -4.5 -4.4 -4.5 Drain source breakdown voltage V(BR)DSS Gate source leak current Zero gate voltege drain current Gate source cutoff voltage Static drain source state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total Gate charge Gate Source charge Gate Drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: Pulse test VGS(off) RDS(on)
HAT1043M
Main Characteristics
Power Temperature Derating -100
Maximum Safe Operation Area
Channel Dissipation
Drain Current
-0.3 Operation this area -0.1 limited DS(on) -0.03 25°C shot pulse -0.01 -0.1 -0.3 -100 Drain Source Voltage Note When using alumina ceramic board 50x50x0.7mm)
Ambient Temperature (°C) Test Condition When using alumina ceramic board (50x50x0.7mm),(PW
Typical Output Characteristics Typical Transfer Characteristics -2.5 Pulse Test Pulse Test
Drain Current
Drain Current
-1.5 Drain Source Voltage
75°C
-25°C 25°C
Gate Source Voltage
HAT1043M
Drain Source Saturation Voltage Gate Source Voltage -0.5 Drain Source Saturation Voltage DS(on) Pulse Test Static Drain Source State Resistance Drain Current 1000 Pulse Test
-0.4
Drain Source State Resistance DS(on)
-0.3 -0.2 Gate Source Voltage
-0.1 -0.2 -2.5
-4.5
-0.1
-0.5 Drain Current
Static Drain Source State Resistance DS(on)
Forward Transfer Admittance
Static Drain Source State Resistance Temperature Pulse Test
Forward Transfer Admittance Drain Current -0.1 -0.3 Drain Current Pulse Test
-2.5
-4.5
Case Temperature (°C)
HAT1043M
Body-Drain Diode Reverse Recovery Time
Reverse Recovery Time (ns)
Typical Capacitance Drain Source Voltage 3000 1000 Ciss Coss Crss
Capacitance (pF)
-0.1
-0.2 -0.5 Reverse Drain Current
Drain Source Voltage
Dynamic Input Characteristics
Switching Time (ns)
1000
Switching Characteristics
d(on) -0.1 -0.2 -4.5 duty -0.5 d(off)
Collector Emitter Voltage
-4.4 Gate Charge (nc)
Gate Emitter Voltage
Drain Current
HAT1043M
Reverse Drain Current Source Drain Voltage Reverse Drain Current Pulse Test -0.4 -0.8 -1.2 -1.6 -2.0
Source Drain Voltage
Switching Time Test Circuit Monitor D.U.T. Vout Monitor
Switching Time Waveform
Vout td(on)
td(off)
HAT1043M
Normalized Transient Thermal Impedance Pulse Width Normalized Transient Thermal Impedance
0.05
0.02
0.01 0.01
f(t) °C/W, When using alumina ceramic board (50x50x0.7
0.001
0.0001
1000
10000
Pulse Width
HAT1043M
Package Dimensions
Unit:
0.3±0.1 0.15 0.05
0.10
1.6±0.15
2.8±0.2
2.95±0.15
0.9±0.1
Hitachi Code EIAJ JEDEC
TSOP-6
Cautions
Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such failsafes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
NorthAmerica http:semiconductor.hitachi.com/ Europe Asia (Singapore) Asia (Taiwan) Asia (HongKong) Japan further information write
Hitachi Semiconductor (America) Inc. East Tasman Drive, Jose,CA 95134 Tel: (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9180-0 Fax: <49> (89) Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office Hung Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> 2718-3666 Fax: <886> 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Tsui, Kowloon, Hong Kong Tel: <852> 9218 Fax: <852> 0281 Telex: 40815 HITEC
Copyright Hitachi, Ltd., 1999. rights reserved. Printed Japan.

ADE-208-754D Edition February 1999 Features on-resistance drive c

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