N-CHANNEL 500V 0.22 TO-220/TO-220FP/D2PAK FDmeshPower MOSFET (with FAS
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Top Searches for this datasheet
STP20NM50FD STF20NM50D STB20NM50FD
N-CHANNEL 500V 0.22 TO-220/TO-220FP/D2PAK FDmeshPower MOSFET (with FAST DIODE)
TYPE STP20NM50FD STF20NM50D STB20NM50FD
VDSS 500V 500V 500V
RDS(on) <0.25 <0.25 <0.25
Rds(on)*Qg 8.36 8.36 8.36
TYPICAL RDS(on) 0.22 HIGH dv/dt AVALANCHE CAPABILITIES 100% AVALANCHE TESTED INPUT CAPACITANCE GATE CHARGE GATE INPUT RESISTANCE TIGHT PROCESS CONTROL HIGH MANUFACTURING YIELDS
TO-220
TO-220FP
D2PAK
DESCRIPTION FDmeshassociates advantages reduced on-resistance fast switching with intrinsic fast-recovery body diode. therefore strongly recommended bridge topologies, particular phase-shift converters.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS PHASE-SHIFT FULL BRIDGE CONVERTERS SMPS WELDING EQUIPMENT
ORDERING INFORMATION
SALES TYPE STP20NM50FD STF20NM50D STB20NM50FD MARKING P20NM50FD F20NM50D B20NM50FD PACKAGE TO-220 TO-220FP D2PAK PACKAGING TUBE TUBE TAPE REEL
November 2003
1/11
STP20NM50FD STF20NM50D STB20NM50FD
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value STP20NM50FD STB20NM50FD VDGR PTOT dv/dt VISO Tstg Drain-source Voltage (VGS Drain-gate Voltage (RGS Gate- source Voltage Drain Current (continuous) 25°C Drain Current (continuous) 100°C Drain Current (pulsed) Total Dissipation 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature --65 2000 0.36 STF20NM50D W/°C V/ns Unit
Pulse width limited safe operating area 20A, di/dt A/µs, V(BR)DSS, TJMAX. Limited only maximum temperature allowed
THERMAL DATA
TO-220 D2PAK Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient 0.65 62.5 TO-220FP °C/W °C/W
Maximum Lead Temperature Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting IAR, Value Unit
ELECTRICAL CHARACTERISTICS (TCASE UNLESS OTHERWISE SPECIFIED) ON/OFF
Symbol V(BR)DSS IDSS IGSS VGS(th RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS Gate-body Leakage Current (VDS Gate Threshold Voltage Static Drain-source Resistance Test Conditions Rating Rating, ±30V VGS, 10V, 0.22 Min. ±100 0.25 Typ. Max. Unit
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STP20NM50FD STF20NM50D STB20NM50FD
ELECTRICAL CHARACTERISTICS (CONTINUED) DYNAMIC
Symbol Ciss Coss Crss Coss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Gate Input Resistance Test Conditions ID(on) RDS(on)max, 25V, MHz, Min. Typ. 1380 Max. Unit
400V Gate Bias=0 Test Signal Level=20mV Open Drain
Pulsed: Pulse duration duty cycle Coss defined constant equivalent capacitance giving same charging time Coss when increases from VDSS.
SWITCHING
Symbol td(on) Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions 250V, (see test circuit, Figure 400V, 20A, Min. Typ. Max. Unit
SWITCHING
Symbol tr(Voff) Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions 400V, 4.7, (see test circuit, Figure Min. Typ. Max. Unit
SOURCE DRAIN DIODE
Symbol ISDM IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt 100A/µs, 60V, 150°C (see test circuit, Figure Test Conditions Min. Typ. Max. Unit
Note: Pulsed: Pulse duration duty cycle Pulse width limited safe operating area.
3/11
STP20NM50FD STF20NM50D STB20NM50FD
Safe Operating Area TO-220 Thermal Impedance TO-220
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source Resistance
4/11
STP20NM50FD STF20NM50D STB20NM50FD
Gate Charge Gate-source Voltage Capacitance Variations
Normalized Gate Thereshold Voltage Temp.
Normalized Resistance Temperature
Source-drain Diode Forward Characteristics
5/11
STP20NM50FD STF20NM50D STB20NM50FD
Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform
Fig. Switching Times Test Circuit Resistive Load
Fig. Gate Charge test Circuit
Fig. Test Circuit Inductive Load Switching Diode Recovery Times
6/11
STP20NM50FD STF20NM50D STB20NM50FD
TO-220 MECHANICAL DATA
MIN. 4.40 0.61 1.15 0.49 15.25 2.40 4.95 1.23 6.20 2.40 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
DIM.
7/11
STP20NM50FD STF20NM50D STB20NM50FD
TO-220FP MECHANICAL DATA
MIN. 0.45 0.75 1.15 1.15 4.95 28.6 15.9 30.6 10.6 16.4 1.126 .0385 0.114 0.626 0.354 0.118 MAX. 2.75 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
DIM.
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STP20NM50FD STF20NM50D STB20NM50FD
D2PAK MECHANICAL DATA
DIM. MIN. 4.88 1.27 5.28 15.85 1.75 0.192 0.590 0.050 0.055 0.094 0.015 2.49 0.03 1.14 0.45 1.23 8.95 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 MAX. 2.69 0.23 0.93 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch
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STP20NM50FD STF20NM50D STB20NM50FD
D2PAK FOOTPRINT
TUBE SHIPMENT suffix)*
TAPE REEL SHIPMENT (suffix "T4")*
REEL MECHANICAL DATA
DIM. 12.8 20.2 24.4 30.4 26.4 13.2 MIN. MAX. 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK 1000 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM.
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BASE 1000
MIN. 10.5 15.7 1.59 1.65 11.4 11.9 0.25 23.7 24.3 MAX. 10.7 15.9 1.61 1.85 11.6 12.1
inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574
0.35 0.0098 0.0137 0.933 0.956
sales type
STP20NM50FD STF20NM50D STB20NM50FD
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