SDRAM Unbuffered Module 168pin Unbuffered Module based 128Mb F-di
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64MB, 128MB, 256MB Unbuffered DIMM
SDRAM Unbuffered Module
168pin Unbuffered Module based 128Mb F-die 62/72-bit ECC/ECC
Revision 2004
Samsung Electronics reserves right change products specification without notice.
Rev. 2004
64MB, 128MB, 256MB Unbuffered DIMM
Revision History
Revision (November, 2003) First release Revision (January, 2004) Revision spec release. Revision (February, 2004) Corrected typo. Revision (March. 2004) Modified Characteristics Notes. Revision (May, 2004) Added Note sentense tRDL parameter
Rev. 2004
64MB, 128MB, 256MB Unbuffered DIMM
168Pin Unbuffered DIMM based 128Mb F-die (x8, x16)
Ordering Information
Part Number M366S0924FTS-C7A M366S1723FTS-C7A M366S1723FTU-C7A M374S1723FTS-C7A M374S1723FTU-C7A M366S3323FTS-C7A M366S3323FTU-C7A M374S3323FTS-C7A M374S3323FTU-C7A Density 64MB 128MB 128MB 128MB 128MB 256MB 256MB 256MB 256MB Organization Component Composition 8Mx16(K4S281632F) 16Mx8(K4S280832F) 16Mx8(K4S280832F) 16Mx8(K4S280832F) 16Mx8(K4S280832F) 16Mx8(K4S280832F)*16EA 16Mx8(K4S280832F)*16EA 16Mx8(K4S280832F)*18EA 16Mx8(K4S280832F)*18EA 54-TSOPII Component Package
Height 1,000mil 1,375mil 1,125mil 1,375mil 1,125mil 1,375mil 1,125mil 1,375mil 1,125mil
Operating Frequencies
@CL3 Maximum Clock Frequency CL-tRCD-tRP(clock) 133MHz(7.5ns) 3-3-3 @CL2 100MHz(10ns) 2-2-2
Feature
Burst mode operation Auto self refresh capability (4096 Cycles/64ms) LVTTL compatible inputs outputs Single 3.3V 0.3V power supply cycle with address programs Latency (Access from column address) Burst length Full page) Data scramble (Sequential Interleave) inputs sampled positive going edge system clock Serial presence detect with EEPROM
Rev. 2004
64MB, 128MB, 256MB Unbuffered DIMM
CONFIGURATIONS (Front side/back side)
Front DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQM0 Front DQM1 **CS0 A10/AP **CLK0 **CS2 DQM2 DQM3 DQ16 DQ17 Front DQ18 DQ19 DQ20 *VREF **CKE1 DQ21 DQ22 DQ23 DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 **CLK2 Back DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 DQM4 Back DQM5 **CS1 **CLK1 *A12 **CKE0 **CS3 DQM6 DQM7 *A13 DQ48 DQ49
Back DQ50 DQ51 DQ52 *VREF REGE DQ53 DQ54 DQ55 DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63 **CLK3
Note These pins used this module.
Pins 82,83,165,166,167 should system which does support SPD. Pins 21,22,52,53,105,106,136,137are used only ECC(x72) Module. About these pins, Refer Block Diagram each.
Description
Name DQ63 CLK0 CKE0, CKE1 Select bank Data input/output Check (Data-in/data-out) Clock input Clock enable input Chip select input address strobe Colume address strobe Write enable Function Address input (Multiplexed) VREF REGE Name DQM0 Power supply (3.3V) Ground Power supply reference Register enable Serial data Serial clock Address EEPROM Dont connection Function
SAMSUNG ELECTRONICS CO., Ltd. reserves right change products specifications without notice.
Rev. 2004
64MB, 128MB, 256MB Unbuffered DIMM
CONFIGURATION DESCRIPTION
Name System clock Chip select Input Function Active positive going edge sample inputs.
Disables enables device operation masking enabling inputs except CLK, Masks system clock freeze operation from next clock cycle. should enabled least cycle prior command. Disable input buffers power down standby. should enabled 1CLK+tss prior valid command. Row/column addresses multiplexed same pins. address RA11 Column address CA9), (x16 CA8) Selects bank activated during address latch time. Selects bank read/write during column address latch time. Latches addresses positive going edge with low. Enables access precharge. Latches column addresses positive going edge with low. Enables column access. Enables write operation precharge. Latches data starting from CAS, active. Makes data output Hi-Z, tSHZ after clock masks output. Blocks data input when active. (Byte masking) device operates transparent mode when REGE low. When REGE high, device operates registered mode. registered mode, Address control inputs latched held high logic level. inputs stored latch/flip-flop rising edge CLK. REGE tied through Resistor PCB. REGE module floating, this module will operated registered mode. Data inputs/outputs multiplexed same pins. Check bits ECC. Power ground input buffers core logic.
Clock enable
Address
DQM0
Bank select address address strobe Column address strobe Write enable Data input/output mask
REGE
Register enable
VDD/VSS
Data input/output Check Power supply/ground
Rev. 2004
64MB, 128MB, 256MB Unbuffered DIMM
64MB, 8Mx64 Module (M366S0924FTS) (Populated bank SDRAM Module) FUNCTIONAL BLOCK DIAGRAM
DQM0 LDQM DQM4 LDQM
DQM1
UDQM
DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39
DQM5
UDQM
DQ10 DQ11 DQ12 DQ13 DQ14 DQ15
DQM2
DQ10 DQ11 DQ12 DQ13 DQ14 DQ15
DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47
DQM6
DQ10 DQ11 DQ12 DQ13 DQ14 DQ15
LDQM
LDQM
DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23
DQM3
UDQM
DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55
DQM7
UDQM
DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31
DQ10 DQ11 DQ12 DQ13 DQ14 DQ15
DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63
DQ10 DQ11 DQ12 DQ13 DQ14 DQ15
A11, CKE0
SDRAM SDRAM SDRAM SDRAM SDRAM
CLK0/2 15pF CLK1/3
U0/U2 U1/U3
10pF Every DQpin Serial
0.1uF Capacitors each
SDRAMs
Rev. 2004
64MB, 128MB, 256MB Unbuffered DIMM
128MB, 16Mx64 Module (M366S1723FTS(U)) (Populated bank SDRAM Module) FUNCTIONAL BLOCK DIAGRAM
DQM0 DQM4
DQM1
DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39
DQM5
DQ10 DQ11 DQ12 DQ13 DQ14 DQ15
DQM2
DQ41 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47
DQM6
DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23
DQM3
DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55
DQM7
DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31
DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63
A11, CKE0
SDRAM SDRAM SDRAM SDRAM SDRAM CLK0/2
3.3pF*1 CLK1/3
U0/U2 U4/U6 U1/U3 U5/U7
Every DQpin Serial
10pF
0.1uF 0.22 Cap. SDRAMs each
Rev. 2004
64MB, 128MB, 256MB Unbuffered DIMM
128MB, 16Mx72 Module (M374S1723FTS(U)) (Populated bank SDRAM Module) FUNCTIONAL BLOCK DIAGRAM
DQM0
DQM4
DQM1
DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39
DQM5
DQ10 DQ11 DQ12 DQ13 DQ14 DQ15
DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47
DQM6
DQM2
DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55
DQM7
DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23
DQM3
DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63
DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31
U0/U3 U5/U7
CLK0/2
U1/U4 U6/U8
3.3pF*1 A11, CKE0 0.1uF 0.22 Cap. SDRAMs each SDRAM Every DQpin Serial
SDRAM SDRAM SDRAM SDRAM SDRAM CLK1/3 10pF loads, CLK2 only.
Rev. 2004
64MB, 128MB, 256MB Unbuffered DIMM
256MB, 32Mx64 Module (M366S3323FTS(U)) (Populated bank SDRAM Module) FUNCTIONAL BLOCK DIAGRAM
DQM0 DQM4
DQM1
DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39
DQM5
DQ10 DQ11 DQ12 DQ13 DQ14 DQ15
DQM2
DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47
DQM6
DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23
DQM3
DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55
DQM7
DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31
A11, CKE0
DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63
SDRAM SDRAM SDRAM SDRAM SDRAM CKE1 SDRAM 3.3pF CLK0/1/2/3
U0/U1/U2/U3 U4/U5/U6/U7 U8/U9/U10/U11 U12/U13/U14/U15
Every DQpin
Serial
0.1uF Capacitors each
SDRAMs
Rev. 2004
64MB, 128MB, 256MB Unbuffered DIMM
256MB, 32Mx72 Module (M374S3323ETS(U)) (Populated bank SDRAM Module) FUNCTIONAL BLOCK DIAGRAM
DQM0
DQM4
DQM1
DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39
DQM5
DQ10 DQ11 DQ12 DQ13 DQ14 DQ15
DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47
DQM2
DQM6
DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55
DQM7
DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23
DQM3
DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63
DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31
CLK0/1/2/3 3.3pF*1
U1/U3/U0/U4 U6/U7/U5/U8 U10/U12/U9/U13 U15/U16/U14/U17 U2/U11
A11, CKE0
SDRAM SDRAM SDRAM SDRAM CKE1 SDRAM
loads, CLK2 CLK3 only. SDRAM
Serial
Every DQpin
0.1uF Capacitors each
SDRAMs
Rev. 2004
64MB, 128MB, 256MB Unbuffered DIMM
ABSOLUTE MAXIMUM RATINGS
Parameter Voltage relative Voltage supply relative Storage temperature Power dissipation Short circuit current Symbol VIN, VOUT VDD, VDDQ TSTG Value -1.0 -1.0 +150 component
Unit
Note Permanent device damage occur "ABSOLUTE MAXIMUM RATINGS" exceeded. Functional operation should restricted recommended operating condition. Exposure higher than recommended voltage extended periods time could affect device reliability.
OPERATING CONDITIONS CHARACTERISTICS
Recommended operating conditions (Voltage referenced 70°C) Parameter Supply voltage Input high voltage Input voltage Output high voltage Output voltage Input leakage current Symbol -0.3 VDDQ+0.3 Unit -2mA Note
Notes (max) 5.6V AC.The overshoot voltage duration 3ns. (min) -2.0V undershoot voltage duration 3ns. input VDDQ. Input leakage currents include Hi-Z output leakage bi-directional buffers with Tri-State outputs.
CAPACITANCE
(VDD 3.3V, 23°C, 1MHz, VREF 1.4V Symbol CIN1 CIN2 CIN3 CIN4 CIN5 CIN6 COUT Symbol CIN1 CIN2 CIN3 CIN4 CIN5 CIN6 COUT M366S0924FTS M374S1723FTS(U) M366S1723FTS(U) M366S3323FTS(U) M374S3323FTS(U) Unit Unit
Parameter Input capacitance A11) Input capacitance (RAS, CAS, Input capacitance (CKE) Input capacitance (CLK) Input capacitance (CS) Input capacitance (DQM0 DQM7) Data input/output capacitance (DQ0 DQ63) Input capacitance A11) Input capacitance (RAS, CAS, Input capacitance (CKE) Input capacitance (CLK) Input capacitance (CS) Input capacitance (DQM0 DQM7) Data input/output capacitance (DQ0 DQ63
Rev. 2004
64MB, 128MB, 256MB Unbuffered DIMM
CHARACTERISTICS M366S0924FTS 64MB Module)
(Recommended operating condition unless otherwise noted, 70°C) Parameter Operating current (One bank active) Precharge standby current power-down mode Precharge standby current power-down mode Active standby current power-down mode Active standby current power-down mode (One bank active) Operating current (Burst mode) Refresh current Self refresh current Symbol ICC1 ICC2P ICC2PS ICC2N ICC2NS ICC3P ICC3PS ICC3N ICC3NS Test Condition Burst length tRC(min) VIL(max), 10ns VIL(max), VIH(min), VIH(min), 10ns Input signals changed time during 20ns VIH(min), VIL(max), Input signals stable VIL(max), 10ns VIL(max), VIH(min), VIH(min), 10ns Input signals changed time during 20ns VIH(min), VIL(max), Input signals stable Page burst 4Banks activated tCCD 2CLKs tRC(min) 0.2V Version
Unit
Note
ICC4 ICC5 ICC6
M366S1723FTS(U) (16M 128MB Module)
(Recommended operating condition unless otherwise noted, 70°C) Parameter Operating current (One bank active) Precharge standby current power-down mode Precharge standby current power-down mode Active standby current power-down mode Active standby current power-down mode (One bank active) Operating current (Burst mode) Refresh current Self refresh current Symbol ICC1 ICC2P ICC2PS ICC2N ICC2NS ICC3P ICC3PS ICC3N ICC3NS Test Condition Burst length tRC(min) VIL(max), 10ns VIL(max), VIH(min), VIH(min), 10ns Input signals changed time during 20ns VIH(min), VIL(max), Input signals stable VIL(max), 10ns VIL(max), VIH(min), VIH(min), 10ns Input signals changed time during 20ns VIH(min), VIL(max), Input signals stable Page burst 4Banks activated tCCD 2CLKs tRC(min) 0.2V Version Unit Note
ICC4 ICC5 ICC6
1600
Notes Measured with outputs open. Refresh period 64ms. Unless otherwise noted, input swing level CMOS(VIH/VIL=VDDQ/VSSQ)
Rev. 2004
64MB, 128MB, 256MB Unbuffered DIMM
CHARACTERISTICS M374S1723FTS(U) (16M 128MB Module)
(Recommended operating condition unless otherwise noted, 70°C) Parameter Operating current (One bank active) Precharge standby current power-down mode Precharge standby current power-down mode Active standby current power-down mode Active standby current power-down mode (One bank active) Operating current (Burst mode) Refresh current Self refresh current Symbol ICC1 ICC2P ICC2PS ICC2N ICC2NS ICC3P ICC3PS ICC3N ICC3NS Test Condition Burst length tRC(min) VIL(max), 10ns VIL(max), VIH(min), VIH(min), 10ns Input signals changed time during 20ns VIH(min), VIL(max), Input signals stable VIL(max), 10ns VIL(max), VIH(min), VIH(min), 10ns Input signals changed time during 20ns VIH(min), VIL(max), Input signals stable Page burst 4Banks activated tCCD 2CLKs tRC(min) 0.2V Version
Unit
Note
ICC4 ICC5 ICC6
1800
M366S3323FTS(U) (32M 256MB Module)
(Recommended operating condition unless otherwise noted, 70°C) Parameter Operating current (One bank active) Precharge standby current power-down mode Precharge standby current power-down mode Active standby current power-down mode Active standby current power-down mode (One bank active) Operating current (Burst mode) Refresh current Self refresh current Symbol ICC1 ICC2P ICC2PS ICC2N ICC2NS ICC3P ICC3PS ICC3N ICC3NS Test Condition Burst length tRC(min) VIL(max), 10ns VIL(max), VIH(min), VIH(min), 10ns Input signals changed time during 20ns VIH(min), VIL(max), Input signals stable VIL(max), 10ns VIL(max), VIH(min), VIH(min), 10ns Input signals changed time during 20ns VIH(min), VIL(max), Input signals stable Page burst 4Banks activated tCCD 2CLKs tRC(min) 0.2V Version Unit Note
ICC4 ICC5 ICC6
1120 1840
Notes Measured with outputs open. Refresh period 64ms. Unless otherwise noted, input swing level CMOS(VIH/VIL=VDDQ/VSSQ)
Rev. 2004
64MB, 128MB, 256MB Unbuffered DIMM
CHARACTERISTICS M374S3323FTS(U) (32M 256MB Module)
(Recommended operating condition unless otherwise noted, 70°C) Parameter Operating current (One bank active) Precharge standby current power-down mode Precharge standby current power-down mode Active standby current power-down mode Active standby current power-down mode (One bank active) Operating current (Burst mode) Refresh current Self refresh current Symbol ICC1 ICC2P ICC2PS ICC2N ICC2NS ICC3P ICC3PS ICC3N ICC3NS Test Condition Burst length tRC(min) VIL(max), 10ns VIL(max), VIH(min), VIH(min), 10ns Input signals changed time during 20ns VIH(min), VIL(max), Input signals stable VIL(max), 10ns VIL(max), VIH(min), VIH(min), 10ns Input signals changed time during 20ns VIH(min), VIL(max), Input signals stable Page burst 4Banks activated tCCD 2CLKs tRC(min) 0.2V Version 1080
Unit
Note
ICC4 ICC5 ICC6
1260 2070
Notes Measured with outputs open. Refresh period 64ms. Unless otherwise noted, input swing level CMOS(VIH/VIL=VDDQ/VSSQ)
Rev. 2004
64MB, 128MB, 256MB Unbuffered DIMM
OPERATING TEST CONDITIONS (VDD 3.3V 0.3V, 70°C)
Parameter input levels (Vih/Vil) Input timing measurement reference level Input rise fall time Output timing measurement reference level Output load condition Value 2.4/0.4 tr/tf Fig.
Unit
3.3V
1.4V
1200 Output 50pF (DC) 2.4V, -2mA (DC) 0.4V, Output
50pF
(Fig. output load circuit
(Fig. output load circuit
OPERATING PARAMETER
operating conditions unless otherwise noted) Parameter active active delay delay precharge time active time cycle time Last data precharge Last data Active delay Last data col. address delay Last data burst stop Col. address col. address delay Number valid output data Symbol tRRD(min) tRCD(min) tRP(min) tRAS(min) tRAS(max) tRC(min) tRDL(min) tDAL(min) tCDL(min) tBDL(min) tCCD(min) latency=3 latency=2 Version Unit Note
Notes minimum number clock cycles determined dividing minimum time required with clock cycle time then rounding next higher integer. Minimum delay required complete write. parts allow every cycle column address change. case precharge interrupt, auto precharge read burst stop. 100MHz below 100MHz operating conditions, tRDL=1CLK tDAL=1CLK 20ns also supported. SAMSUNG recommends tRDL=2CLK tDAL=2CLK tRP.
Rev. 2004
64MB, 128MB, 256MB Unbuffered DIMM
CHARACTERISTICS operating conditions unless otherwise noted) REFER INDIVIDUAL COMPONENET, WHOLE MODULE.
Parameter cycle time valid output delay Output data hold time latency=3 latency=2 latency=3 latency=2 latency=3 latency=2 tSLZ tSHZ tSAC Symbol 1000 Unit
Note
high pulse width pulse width Input setup time Input hold time output Low-Z output Hi-Z latency=3 latency=2
Notes Parameters depend programmed latency. clock rising time longer than 1ns, (tr/2-0.5)ns should added parameter. Assumed input rise fall time 1ns. longer than 1ns, transient time compensation should considered, i.e., [(tr tf)/2-1]ns should added parameter.
Rev. 2004
64MB, 128MB, 256MB Unbuffered DIMM
SIMPLIFIED TRUTH TABLE
Command Register Mode register Auto refresh Refresh Entry Self refresh Exit
CKEn-1 CKEn
(V=Valid, X=Dont care, H=Logic high, L=Logic low)
BA0,1 A10/AP Note
code
address
Column address
Bank active addr. Read column address Write column address Burst stop Precharge Bank selection banks Clock suspend active power down Entry Exit Entry Precharge power down mode Exit operation command Auto precharge disable Auto precharge enable Auto precharge disable Auto precharge enable
Column address
Notes Code Operand code Program keys. MRS) issued only banks precharge state. command issued after clock cycles MRS. Auto refresh functions same refresh DRAM. automatical precharge without precharge command meant "Auto". Auto/self refresh issued only banks precharge state. Bank select addresses. both "Low" read, write, active precharge, bank selected. "High" "Low" read, write, active precharge, bank selected. "Low" "High" read, write, active precharge, bank selected. both "High" read, write, active precharge, bank selected. A10/AP "High" precharge, ignored banks selected. During burst read write with auto precharge, read/write command issued. Another bank read/write command issued after burst. active associated bank issued after burst. Burst stop command valid every burst length. sampled positive going edge masks data-in very (Write latency makes Hi-Z state data-out cycles after. (Read latency
Rev. 2004
64MB, 128MB, 256MB Unbuffered DIMM
PACKAGE DIMENSIONS 8Mx64 (M366S0924FTS)
Units Inches (Millimeters)
5.250 (133.350) 0.118 (3.000) 5.014 (127.350)
0.079 2.000) 0.157 0.004 (4.000 0.100)
1.000 (25.40)
0.118 (3.000)
.118DIA +0.004/-0.000 (3.000DIA +0.100/-0.000) 0.350 (8.890)
0.250 (6.350) .450 (11.430) 1.450 (36.830) 4.550 (115.57)
0.250 (6.350) 2.150 (54.61)
0.0984 ±0.008 (2.500 ±0.2)
0.700 (17.780)
0.100 (2.54 Max) (5.08 Min) 0.200
0.050 0.0039 (1.270 0.10) 0.0984 ±0.008
(2.500 ±0.2)
0.250 (6.350)
0.250 (6.350)
0.039 0.002 (1.000 0.050) 0.008 ±0.006 (0.200 ±0.150) 0.050 (1.270)
0.123 0.005 (3.125 0.125) 0.079 0.004 (2.000 0.100)
0.123 0.005 (3.125 0.125) 0.079 0.004 (2.000 0.100)
Detail
Detail
Detail
Tolerances .005(.13) unless otherwise specified used device 8Mx16 SDRAM, TSOPII SDRAM Part K4S281632F
Rev. 2004
64MB, 128MB, 256MB Unbuffered DIMM
PACKAGE DIMENSIONS 16Mx64 (M366S1723FTS)
Units Inches (Millimeters)
5.250 (133.350) 0.118 (3.000) 5.014 (127.350)
0.089 (2.26) 0.079 2.000) 0.157 0.004 (4.000 0.100)
1.375 (34.925)
0.118 (3.000)
.118DIA +0.004/-0.000 (3.000DIA +0.100/-0.000) 0.350 (8.890)
0.250 (6.350) .450 (11.430) 1.450 (36.830) 4.550 (115.57)
0.250 (6.350) 2.150 (54.61)
0.0984 ±0.008 (2.500 ±0.2)
0.700 (17.780)
0.100 (2.54 Max) (4.19 Min) 0.165
0.050 0.0039 (1.270 0.10) 0.0984 ±0.008
(2.500 ±0.2)
0.250 (6.350)
0.250 (6.350)
0.039 0.002 (1.000 0.050) 0.008 ±0.006 (0.200 ±0.150) 0.050 (1.270)
0.123 0.005 (3.125 0.125) 0.079 0.004 (2.000 0.100)
0.123 0.005 (3.125 0.125) 0.079 0.004 (2.000 0.100)
Detail
Detail
Detail
Tolerances .005(.13) unless otherwise specified used device 16Mx8 SDRAM, TSOPII SDRAM Part K4S280832F
Rev. 2004
64MB, 128MB, 256MB Unbuffered DIMM
PACKAGE DIMENSIONS :16Mx64 (M366S1723FTU)
Units Inches (Millimeters)
5.250 (133.350) 0.118 (3.000) 0.374 (9.505) 0.096 (2.44) 0.125 (3.18) 5.014 (127.350)
0.089 (2.26)
0.050+0.04 1.27+0.1/-0.0) 0.079 2.000) 0.157 0.004 (4.000 0.100)
1.125 (28.575)
0.118 (3.000)
.118DIA +0.004/-0.000 (3.000DIA +0.100/-0.000) 0.350 (8.890)
0.250 (6.350) .450 (11.430) 1.450 (36.830) 4.550 (115.57)
0.250 (6.350) 2.150 (54.61)
0.0984 ±0.008 (2.500 ±0.2)
0.700 (17.780)
0.100 (2.54 Max) (4.19 Min) 0.165
0.050 0.0039 (1.270 0.10) 0.0984 ±0.008
(2.500 ±0.2)
0.250 (6.350)
0.250 (6.350)
0.039 0.002 (1.000 0.050) 0.008 ±0.006 (0.200 ±0.150) 0.050 (1.270)
0.123 0.005 (3.125 0.125) 0.079 0.004 (2.000 0.100)
0.123 0.005 (3.125 0.125) 0.079 0.004 (2.000 0.100)
Detail
Detail
Detail
Tolerances .005(.13) unless otherwise specified used device 16Mx8 SDRAM, TSOPII SDRAM Part K4S280832F
Rev. 2004
64MB, 128MB, 256MB Unbuffered DIMM
PACKAGE DIMENSIONS 16Mx72 (M374S1723FTS)
Units Inches (Millimeters)
5.250 (133.350) 0.118 (3.000) 5.014 (127.350)
0.089 (2.26) 0.079 2.000) 0.157 0.004 (4.000 0.100)
1.375 (34.925)
0.118 (3.000)
0.250 (6.350) .450 (11.430) 1.450 (36.830) 4.550 (115.57)
0.250 (6.350) 2.150 (54.61)
0.350 (8.890)
0.0984 ±0.008 (2.500 ±0.2)
.118DIA +0.004/-0.000 (3.000DIA +0.100/-0.000)
0.700 (17.780)
0.100 (2.54 Max) (4.19 Min) 0.165
0.050 0.0039 (1.270 0.10)
0.0984 ±0.008
0.250 (6.350)
0.250 (6.350)
(2.500 ±0.2)
0.039 0.002 (1.000 0.050) 0.008 ±0.006 (0.200 ±0.150) 0.050 (1.270)
0.123 .005 (3.125 .125) 0.079 .004 (2.000 .100)
0.123 .005 (3.125 .125) 0.079 .004 (2.000 .100)
Detail
Detail
Detail
Tolerances .005(.13) unless otherwise specified used device 16Mx8 SDRAM, TSOPII SDRAM Part K4S280832F
Rev. 2004
64MB, 128MB, 256MB Unbuffered DIMM
PACKAGE DIMENSIONS 16Mx72 (M374S1723FTU)
Units Inches (Millimeters)
5.250 (133.350) 0.118 (3.000) 0.374 (9.505) 0.096 (2.44) 0.125 (3.18) 5.014 (127.350)
0.089 (2.26)
0.050+0.04 1.27+0.1/-0.0) 0.079 2.000) 0.157 0.004 (4.000 0.100)
1.125 (28.575)
0.118 (3.000)
.118DIA +0.004/-0.000 (3.000DIA +0.100/-0.000) 0.350 (8.890)
0.250 (6.350) .450 (11.430) 1.450 (36.830) 4.550 (115.57)
0.250 (6.350) 2.150 (54.61)
0.0984 ±0.008 (2.500 ±0.2)
0.700 (17.780)
0.100 (2.54 Max) (4.19 Min) 0.165
0.050 0.0039 (1.270 0.10) 0.0984 ±0.008
0.250 (6.350)
0.250 (6.350)
(2.500 ±0.2)
0.039 0.002 (1.000 0.050) 0.008 ±0.006 (0.200 ±0.150) 0.050 (1.270)
0.123 .005 (3.125 .125) 0.079 .004 (2.000 .100)
0.123 .005 (3.125 .125) 0.079 .004 (2.000 .100)
Detail
Detail
Detail
Tolerances .005(.13) unless otherwise specified used device 16Mx8 SDRAM, TSOPII SDRAM Part K4S280832F
Rev. 2004
64MB, 128MB, 256MB Unbuffered DIMM
PACKAGE DIMENSIONS 32Mx64 (M366S3323FTS)
Units Inches (Millimeters)
5.250 (133.350) 0.118 (3.000) 5.014 (127.350)
0.079 2.000) 0.157 0.004 (4.000 0.100)
1.375 (34.925)
0.118 (3.000)
.118DIA +0.004/-0.000 (3.000DIA +0.100/-0.000) 0.350 (8.890)
0.250 (6.350) .450 (11.430) 1.450 (36.830) 4.550 (115.57)
0.250 (6.350) 2.150 (54.61)
0.0984 ±0.008 (2.500 ±0.2)
0.700 (17.780)
0.150 (3.81 Max) (4.19 Min) 0.165
0.050 0.0039 (1.270 0.10) 0.0984 ±0.008
(2.500 ±0.2)
0.250 (6.350)
0.250 (6.350)
0.039 0.002 (1.000 0.050) 0.008 0.006 (0.200 0.150) 0.050 (1.270)
0.123 0.005 (3.125 0.125) 0.079 0.004 (2.000 0.100)
0.123 0.005 (3.125 0.125) 0.079 0.004 (2.000 0.100)
Detail
Detail
Detail
Tolerances .005(.13) unless otherwise specified used device 16Mx8 SDRAM, TSOPII SDRAM Part K4S280832F
Rev. 2004
64MB, 128MB, 256MB Unbuffered DIMM
PACKAGE DIMENSIONS 32Mx64 (M366S3323FTU)
Units Inches (Millimeters)
5.250 (133.350) 0.118 (3.000) 5.014 (127.350)
0.079 2.000) 0.157 0.004 (4.000 0.100)
1.125 (28.575)
0.118 (3.000)
.118DIA +0.004/-0.000 (3.000DIA +0.100/-0.000) 0.350 (8.890)
0.250 (6.350) .450 (11.430) 1.450 (36.830) 4.550 (115.57)
0.250 (6.350) 2.150 (54.61)
0.0984 ±0.008 (2.500 ±0.2)
0.700 (17.780)
0.150 (3.81 Max) (4.19 Min) 0.165
0.050 0.0039 (1.270 0.10) 0.0984 ±0.008
(2.500 ±0.2)
0.250 (6.350)
0.250 (6.350)
0.039 0.002 (1.000 0.050) 0.008 0.006 (0.200 0.150) 0.050 (1.270)
0.123 0.005 (3.125 0.125) 0.079 0.004 (2.000 0.100)
0.123 0.005 (3.125 0.125) 0.079 0.004 (2.000 0.100)
Detail
Detail
Detail
Tolerances .005(.13) unless otherwise specified used device 16Mx8 SDRAM, TSOPII SDRAM Part K4S280832F
Rev. 2004
64MB, 128MB, 256MB Unbuffered DIMM
PACKAGE DIMENSIONS 32Mx72 (M374S3323FTS)
Units Inches (Millimeters)
5.250 (133.350) 0.118 (3.000) 5.014 (127.350)
0.079 2.000) 0.157 0.004 (4.000 0.100)
1.375 (34.925)
0.118 (3.000)
.118DIA +0.004/-0.000 (3.000DIA +0.100/-0.000) 0.350 (8.890)
0.250 (6.350) .450 (11.430) 1.450 (36.830) 4.550 (115.57)
0.250 (6.350) 2.150 (54.61)
0.0984 ±0.008 (2.500 ±0.2)
0.700 (17.780)
0.150 (3.81 Max) (4.19 Min) 0.165
0.050 0.0039 (1.270 0.10) 0.0984 ±0.008
(2.500 ±0.2)
0.250 (6.350)
0.250 (6.350)
0.039 0.002 (1.000 0.050) 0.008 ±0.006 (0.200 ±0.150) 0.050 (1.270)
0.123 0.005 (3.125 0.125) 0.079 0.004 (2.000 0.100)
0.123 0.005 (3.125 0.125) 0.079 0.004 (2.000 0.100)
Detail
Detail
Detail
Tolerances 0.005(.13) unless otherwise specified used device 16Mx8 SDRAM, TSOPII SDRAM Part K4S280832F
Rev. 2004
64MB, 128MB, 256MB Unbuffered DIMM
PACKAGE DIMENSIONS 32Mx72 (M374S3323FTU)
Units Inches (Millimeters)
5.250 (133.350) 0.118 (3.000) 5.014 (127.350)
0.079 2.000) 0.157 0.004 (4.000 0.100)
1.125 (28.575)
0.118 (3.000)
.118DIA +0.004/-0.000 (3.000DIA +0.100/-0.000) 0.350 (8.890)
0.250 (6.350) .450 (11.430) 1.450 (36.830) 4.550 (115.57)
0.250 (6.350) 2.150 (54.61)
0.0984 ±0.008 (2.500 ±0.2)
0.700 (17.780)
0.150 (3.81 Max) (4.19 Min) 0.165
0.050 0.0039 (1.270 0.10) 0.0984 ±0.008
(2.500 ±0.2)
0.250 (6.350)
0.250 (6.350)
0.039 0.002 (1.000 0.050) 0.008 ±0.006 (0.200 ±0.150) 0.050 (1.270)
0.123 0.005 (3.125 0.125) 0.079 0.004 (2.000 0.100)
0.123 0.005 (3.125 0.125) 0.079 0.004 (2.000 0.100)
Detail
Detail
Detail
Tolerances 0.005(.13) unless otherwise specified used device 16Mx8 SDRAM, TSOPII SDRAM Part K4S280832F
Rev. 2004
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