Build Biasing Circuit Amplifier ADE-208-507 1st. Edition Features

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Build Biasing Circuit Amplifier ADE-208-507 1st. Edition Features

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BB301C
Build Biasing Circuit Amplifier
ADE-208-507 1st. Edition Features
Build Biasing Circuit; reduce using parts cost board space. noise characteristics; typ. MHz) Withstanding ESD; Build absorbing diode Withstand conditions.
Outline
CMPAK-4
Source Gate1 Gate2 Drain
BB301C
Absolute Maximum Ratings 25°C)
Item Drain source voltage Gate source voltage Gate source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VG1S VG2S Tstg Ratings +150 Unit
BB301C
Electrical Characteristics 25°C)
Item Drain source breakdown voltage Gate source breakdown voltage Gate source breakdown voltage Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS +100 ±100 Unit Test conditions VG1S VG2S VG2S VG1S VG1S VG2S VG2S VG1S VG2S VG1S VG2S VG2S VG2S VG2S
Gate source cutoff current G1SS Gate source cutoff current G2SS Gate source cutoff voltage VG1S(off) Gate source cutoff voltage VG2S(off) Drain current Forward transfer admittance D(op) |yfs|
Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure Note: Marking "AW-".
Ciss Coss Crss
0.018
0.04
BB301C
Main Characteristics
Test Circuit Operating Items D(op) |yfs|, Ciss, Coss, Crss, Gate Gate
Drain
Source
Application Circuit VAGC BBFET Output
Input
BB301C
Maximum Channel Power Dissipation Curve Channel Power Dissipation (mW) Drain Current (mA) Typical Output Characteristics VG2S
Ambient Temperature (°C)
Drain Source Voltage
Drain Current Gate2 Source Voltage
Drain Current Gate1 Voltage
Drain Current (mA)
Drain Current (mA)
VG2S
Gate2 Source Voltage VG2S
Gate1 Voltage
BB301C
Drain Current Gate1 Voltege Drain Current (mA) Drain Current Gate1 Voltege
Drain Current (mA)
VG2S Gate1 Voltage
VG2S
Gate1 Voltage
Forward Transfer Admittance (mS)
Forward Transfer Admittance (mS)
Forward Transfer Admittance Gate1 Voltage VG2S Gate1 Voltage
Forward Transfer Admittance Gate1 Voltage VG2S Gate1 Voltage
BB301C
Forward Transfer Admittance Gate1 Voltage Power Gain Gate Resistance Power Gain (dB) VG2S Gate1 Voltage VG2S 1000
Forward Transfer Admittance (mS)
Gate Resistance
Noise Figure Gate Resistance VG2S Power Gain (dB)
Power Gain Drain Current
Noise Figure (dB)
VG2S variable
1000
Gate Resistance
Drain Current (mA)
BB301C
Noise Figure Drain Current VG2S variable Drain Current Gate Resistance Drain Current (mA) VG1= VG2S 1000
Noise Figure (dB)
Drain Current (mA)
Gate Resistance
Gain Reduction Gate2 Source Voltage Input Capacitance Ciss (pF) VG2S
Input Capacitance Gate2 Source Voltage
Gain Reduction (dB)
Gate2 Source Voltage VG2S
Gate2 Source Voltage VG2S
BB301C
Package Dimentions
Unit:
±0.2 0.65 0.65 0.05
0.425
0.05
0.16 0.06
±0.3 1.25
0.05 0.65
0.425 ±0.1
0.05
1.25
Hitahi Code EIAJ JEDEC
CMPAK-4 SC-82AB
Cautions
Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such failsafes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
NorthAmerica http:semiconductor.hitachi.com/ Europe Asia (Singapore) Asia (Taiwan) Asia (HongKong) Japan further information write
Hitachi Semiconductor (America) Inc. East Tasman Drive, Jose,CA 95134 Tel: (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9180-0 Fax: <49> (89) Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office Hung Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> 2718-3666 Fax: <886> 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Tsui, Kowloon, Hong Kong Tel: <852> 9218 Fax: <852> 0281 Telex: 40815 HITEC
Copyright Hitachi, Ltd., 1999. rights reserved. Printed Japan.

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