Dual N-Channel 30-V (D-S) MOSFET FEATURES rDS(on) 0.022

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Dual N-Channel 30-V (D-S) MOSFET FEATURES rDS(on) 0.022

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Si7844DP
Dual N-Channel 30-V (D-S) MOSFET
FEATURES
rDS(on)
0.022 0.030
TrenchFETr Power MOSFET 100% Tested
PowerPAKr SO-8
6.15
5.15
Bottom View Ordering Information: Si7844DP-T1
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction Storage Temperature Range 25_C 70_C 25_C 70_C
Symbol
secs
Steady State
Unit
Tstg
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes Surface Mounted Board. Document Number: 71328 S-31728-Rev. 18-Aug-03 www.vishay.com Steady State Steady State RthJA RthJC
Symbol
Typical
Maximum
Unit
_C/W
Si7844DP
SPECIFICATIONS 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) VGS, 55_C 0.018 0.024 0.75 0.022 0.030 "100
Symbol
Test Condition
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time td(on) td(off) di/dt A/ms VGEN
Notes Pulse test; pulse width duty cycle Guaranteed design, subject production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
thru Drain Current Drain Current
Transfer Characteristics
125_C 25_C -55_C
Drain-to-Source Voltage
Gate-to-Source Voltage Document Number: 71328 S-31728-Rev. 18-Aug-03
www.vishay.com
Si7844DP
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance Drain Current
0.040 DS(on) On-Resistance 1000
Capacitance
Capacitance (pF)
0.032
Ciss
0.024
0.016
Coss Crss
0.008
0.000
Drain Current
Drain-to-Source Voltage
Gate Charge
Gate-to-Source Voltage
On-Resistance Junction Temperature
DS(on) On-Resistance (Normalized)
Total Gate Charge (nC)
Junction Temperature (_C)
Source-Drain Diode Forward Voltage
150_C Source Current 0.04
On-Resistance Gate-to-Source Voltage
DS(on) On-Resistance
0.03
0.02
25_C
0.01
0.00 Source-to-Drain Voltage Gate-to-Source Voltage
Document Number: 71328 S-31728-Rev. 18-Aug-03
www.vishay.com
Si7844DP
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
GS(th) Variance -0.0 Power
-0.2
-0.4
-0.6
-0.8
0.001
0.01
Time (sec)
Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient Thermal Impedance Duty Cycle
Notes:
0.05 0.02 Single Pulse 0.01 Square Wave Pulse Duration (sec)
Duty Cycle,
Unit Base RthJA 60_C/W PDMZthJA(t) Surface Mounted
Normalized Thermal Transient Impedance, Junction-to-Case
Normalized Effective Transient Thermal Impedance Duty Cycle
0.05 0.02 Single Pulse 0.01
Square Wave Pulse Duration (sec)
www.vishay.com
Document Number: 71328 S-31728-Rev. 18-Aug-03

Dual N-Channel 30-V (D-S) MOSFET FEATURES rDS(on) 0.022

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