N-Channel 60-V (D-S) Fast Switching MOSFET FEATURES 10.3
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Si7850DP
N-Channel 60-V (D-S) Fast Switching MOSFET
FEATURES
10.3
rDS(on)
0.022 0.031
TrenchFETr Power MOSFET Thermal Resistance PowerPAKr Package with 1.07-mm Profile Optimized Fast Switching 100% Tested
APPLICATIONS
PowerPAK SO-8
Primary Side Switch 24-V DC/DC Applications Secondary Synchronous Rectifier
6.15
5.15
N-Channel MOSFET
Bottom View Ordering Information: Si7850DP-T1
ABSOLUTE MAXIMUM RATINGS 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 150_C)a Continuous Source Current Pulsed Drain Current Avalanche Currentb Single Avalanche Energyb Maximum Power Dissipationa Operating Junction Storage Temperature Range 25_C 85_C 25_C 85_C
Symbol
secs
10.3
Steady State
Unit
Tstg
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes Surface Mounted Board. Guaranteed design, subject production testing. Document Number: 71625 S-31727-Rev. 18-Aug-03 www.vishay.com Steady State Steady State RthJA RthJC
Symbol
Typical
Maximum
Unit
_C/W
Si7850DP
MOSFET SPECIFICATIONS 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain CurrentNO Drain-Source On-State ResistanceNO Forward TransconductanceNO Diode Forward VoltageNO V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) VGS, 55_C 10.3 10.3 0.018 0.025 0.85 0.022 0.031 "100
Symbol
Test Condition
Unit
DynamicNO
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate-Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time td(on) td(off) di/dt A/ms VGEN 10.3
Notes Pulse test; pulse width duty cycle Guaranteed design, subject production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
thru Drain Current Drain Current
Transfer Characteristics
150_C 25_C -55_C
Drain-to-Source Voltage
Gate-to-Source Voltage
www.vishay.com
Document Number: 71625 S-31727-Rev. 18-Aug-03
Si7850DP
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance Drain Current
0.06 1400 1200 Capacitance (pF) 1000 Crss Coss Ciss
Capacitance
DS(on) On-Resistance
0.05
0.04 0.03
0.02
0.01
0.00
Drain Current
Drain-to-Source Voltage
Gate Charge
Gate-to-Source Voltage 10.3 DS(on) On-Resistance (Normalized)
On-Resistance Junction Temperature
10.3
Total Gate Charge (nC)
Junction Temperature (_C)
Source-Drain Diode Forward Voltage
0.06
On-Resistance Gate-to-Source Voltage
0.05 DS(on) On-Resistance Source Current
150_C
25_C
0.04 10.3 0.03
0.02
0.01
0.00
0.00
Source-to-Drain Voltage
Gate-to-Source Voltage
Document Number: 71625 S-31727-Rev. 18-Aug-03
www.vishay.com
Si7850DP
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 0.01 Time (sec) Temperature (_C) Power
Single Pulse Power
GS(th) Variance
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient Thermal Impedance Duty Cycle
Notes:
0.05 0.02
Duty Cycle,
Unit Base RthJA 58_C/W
Single Pulse 0.01 Square Wave Pulse Duration (sec)
PDMZthJA(t) Surface Mounted
Normalized Thermal Transient Impedance, Junction-to-Case
Normalized Effective Transient Thermal Impedance Duty Cycle
0.05 0.02 Single Pulse 0.01 Square Wave Pulse Duration (sec)
www.vishay.com
Document Number: 71625 S-31727-Rev. 18-Aug-03
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