CPH5818 MOSFET P-Channel Silicon MOSFET Schottky Barrier Diode

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CPH5818 MOSFET P-Channel Silicon MOSFET Schottky Barrier Diode

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Ordering number ENN7447
CPH5818
MOSFET P-Channel Silicon MOSFET Schottky Barrier Diode
CPH5818
Converter Applications
Features
Package Dimensions
Composite type with P-Channel Sillicon MOSFET unit (MCH3339) Schottky Barrier Diode (SBS007M) 2171 contained package facilitating high-density mounting. [MOSFET] ON-resistance. Ultrahigh-speed switching. [SBD] Short reverse recovery time. forward voltage.
[CPH5818]
0.15
0.95
0.05
Cathode Drain Gate Source Anode SANYO CPH5
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IFSM Tstg 50Hz sine wave, cycle +125 +125 VDSS VGSS Tstg PW10µs, duty cycle1% Mounted ceramic board (600mm2!0.8mm) 1unit -1.5 -6.0 +125 Symbol Conditions Ratings Unit
Marking
SANYO products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO representative nearest before using SANYO products described contained herein such applications. SANYO assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO products described contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
32603 TA-3843 No.7447-1/5
CPH5818
Electrical Characteristics Ta=25°C
Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time IR=0.5mA IF=0.3A IF=0.5A VR=6V VR=10V, f=1MHz cycle IF=IR=100mA, specified Test Circuit. 0.35 0.41 0.46 V(BR)DSS IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) td(off) ID=-1mA, VGS=0 VDS=-12V, VGS=0 VGS=±9.6V, VDS=0 VDS=-6V, ID=-1mA VDS=-6V, ID=-0.8A ID=-0.8A, VGS=-10V ID=-0.4A, VGS=-4.5V ID=-0.1A, VGS=-4V VDS=-6V, f=1MHz VDS=-6V, f=1MHz VDS=-6V, f=1MHz specified Test Circuit specified Test Circuit specified Test Circuit specified Test Circuit VDS=-10V, VGS=-10V, ID=-1.5A VDS=-10V, VGS=-10V, ID=-1.5A VDS=-10V, VGS=-10V, ID=-1.5A IS=-1.5A, VGS=0 -1.0 -0.94 -1.5 -2.4 Symbol Conditions Ratings Unit
Electrical Connection
Gathode Drain Gate Source Anode
(Top view)
Switching Time Test Circuit
[MOSFET]
-10V -0.8A RL=12.5 VDD= -10V
Test Circuit
[SBD] Duty10% 100mA 10mA
CPH5818
10µs
PW=10µs D.C.1%
VOUT
100mA
No.7447-2/5
CPH5818
-2.0
[MOSFET]
-2.0
VDS= -10V
[MOSFET]
-1.8 -1.6
-1.8 -1.6
Drain Current,
-1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8
Drain Current,
-3.0
-1.4 -1.2 -1.0 -0.8
VGS= -2.5V
-0.2 -0.9 -1.0 -0.5 -1.0
-1.5
-2.0
-2.5
-0.4
-0.6
-3.0
-3.5
Drain-to-Source Voltage, IT05613 [MOSFET] RDS(on) Static Drain-to-Source On-State Resistance, RDS(on)
Gate-to-Source Voltage,
IT05614
RDS(on)
[MOSFET]
Static Drain-to-Source On-State Resistance, RDS(on)
-0.4A
Ta=25°C
-0.1A
-0.8A
0.1A -4.5V .4A, -10V -0.8
Gate-to-Source Voltage, IT05615 [MOSFET] VDS= -10V Forward Drain Current,
Ambient Temperature,
-1.0
IT05616
[MOSFET] VGS=0
Forward Transfer Admittance,
-0.1
-0.01
-0.1
-1.0
Drain Current,
1000
IT05617
-0.01 -0.4
-0.6
-0.8
-1.0
-1.2 IT05618
Time
[MOSFET] VDD= -10V VGS= -10V Ciss, Coss, Crss
Ciss, Coss, Crss [MOSFET]
f=1MHz
Diode Forward Voltage,
Switching Time, Time
-0.01 -0.1 -1.0 IT05619
Ciss
td(off)
td(on)
Coss Crss
IT05620
Drain Current,
Drain-to-Source Voltage,
No.7447-3/5
CPH5818
VDS= -10V -1.5A
[MOSFET]
-1.0 -0.1
IDP=
[MOSFET] <10µs 100µs
Gate-to-Source Voltage,
Drain Current,
-1.5A
IT05621
Operation this area limited RDS(on). Ta=25°C Single pulse Mounted ceramic board(600mm2!0.8mm) 1unit
7-0.1 7-1.0 7-10
-0.01 -0.01
Total Gate Charge,
Drain-to-Source Voltage,
IT05890
[MOSFET]
Allowable Power Dissipation,
Ambient Temperature,
IT05891
From Ta=125°C 100°C 75°C 50°C 25°C
[SBD]
Ta=125°C
[SBD]
0.01
Reverse Current,
Forward Current,
100°C
75°C
50°C
25°C
0.01 0.001 IT02954
IT02953
Forward Voltage,
Average Forward Power Dissipation, PF(AV)
0.35 0.25 0.15 360°
PF(AV)
Reverse Voltage,
[SBD]
[SBD] f=1MHz
Interterminal Capacitance,
(1)Rectangular wave =60° (2)Rectangular wave =120° (3)Rectangular wave =180° (4)Sine wave =180° Rectangular wave
Sine wave
0.05 180° 360°
IT02955
IT02956
Average Forward Current,
Reverse Voltage,
No.7447-4/5
CPH5818
[SBD]
Current waveform 50Hz sine wave Surge Forward Current,
20ms
0.01
Time,
IT05889
Specifications SANYO products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Electric Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO products(including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must expor without obtaining expor license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Electric Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO product that intend use. Information (including circuit diagrams circuit parameters) herein example only guaranteed volume production. SANYO believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties. This catalog provides information March, 2003. Specifications information herein subject change without notice.
No.7447-5/5

CPH5818 MOSFET P-Channel Silicon MOSFET Schottky Barrier Diode

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