N-CHANNEL STripFETTMII MOSFET Table General Features Type ST
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STP200NF04 STB200NF04 STB200NF04-1
N-CHANNEL STripFETTMII MOSFET
Table General Features
Type STB200NF04 STB200NF04-1 STP200NF04
Figure Package
VDSS
RDS(on) 0.0037 0.0037 0.0037
STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED TO-220
D2PAK
DESCRIPTION This MOSFET latest development STMicroelectronics unique "Single Feature SizeTM" strip-based process. resulting transistor shows extremely high packing density onresistance, rugged avalance characteristics less critical alignment steps therefore remarkable manufacturing reproducibility.
I2PAK Figure Internal Schematic Diagram
APPLICATIONS HIGH CURRENT, HIGH SWITCHING SPEED AUTOMOTIVE
Table Order Codes
SALES TYPE STB200NF04T4 STB200NF04-1 STP200NF04 MARKING B200NF04 B200NF04 P200NF04 PACKAGE D2PAK I2PAK TO-220 PACKAGING TAPE REEL TUBE TUBE
Rev. October 2004 1/15
STP200NF04 STB200NF04 STB200NF04-1
Table Absolute Maximum ratings
Symbol VDGR PTOT dv/dt Tstg Parameter Drain-source Voltage (VGS Drain-gate Voltage (RGS Gate- source Voltage Drain Current (continuos) 25°C Drain Current (continuos) 100°C Drain Current (pulsed) Total Dissipation 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Operating Junction Temperature Storage Temperature Value 2.07 Unit W/°C V/ns
Pulse width limited safe operating area 120A, di/dt 500A/µs, V(BR)DSS, TJMAX. Starting 25°C, 60A, VDD=30 Current Limited Package
Table Thermal Data
TO-220 I2PAK D2PAK Rthj-case Rthj-pcb Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-pcb Thermal Resistance Junction-ambient (Free air) Maximum Lead Temperature Soldering Purpose 0.48 (see Figure 62.5 °C/W °C/W °C/W
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table On/Off
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS Gate-body Leakage Current (VDS Gate Threshold Voltage Static Drain-source Resistance Test Conditions Rating Rating, VGS, 250µA 10V, Min. ±100 Typ. Max. Unit
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STP200NF04 STB200NF04 STB200NF04-1
ELECTRICAL CHARACTERISTICS (CONTINUED) Table Dynamic
Symbol Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions 25V, MHz, Min. Typ. 5100 1600 Max. Unit
Table Switching On/Off
Symbol td(on) td(off) Parameter Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions (see Figure 20V, (see Figure Min. Typ. Max. Unit
Table Source Drain Diode
Symbol ISDM IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt 100A/µs 30V, 150°C (see Figure Test Conditions Min. Typ. Max. Unit
Pulsed: Pulse duration duty cycle Pulse width limited safe operating area.
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STP200NF04 STB200NF04 STB200NF04-1
Figure Safe Operating Area Figure Thermal Impedance
Figure Output Characteristics
Figure Transfer Characteristics
Figure Transconductance
Figure Static Drain-source Resistance
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STP200NF04 STB200NF04 STB200NF04-1
Figure Gate Charge Gate-source Voltage Figure Capacitance Variations
Figure Normalized Gate Thereshold Voltage Temperature
Figure Normalized Resistance Temperature
Figure Dource-Drain Diode Forward Characteristics
Figure Normalized Breakdown Voltage Temperature
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STP200NF04 STB200NF04 STB200NF04-1
Figure Thermal Resistance Rthj-a Copper Area Figure Power Dissipation Copper Area
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STP200NF04 STB200NF04 STB200NF04-1
Figure Allowable Time Avalanche
previous curve gives safe operating area unclamped inductive loads, single pulse repetitive, under following conditions: PD(AVE) (1.3 BVDSS IAV) EAS(AR) PD(AVE) Where: Allowable Current Avalanche PD(AVE) Average Power Dissipation Avalanche (Single Pulse) Time Avalanche derate above fixed IAV, following equation must applied: (Tjmax TCASE) (1.3 BVDSS Zth) Where: value coming from Normalized Thermal Response fixed pulse width equal TAV.
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STP200NF04 STB200NF04 STB200NF04-1
SPICE THERMAL MODEL
Table Order Network
Parameter CTHERM1 CTHERM2 CTHERM3 CTHERM4 CTHERM5 CTHERM6 Node Value 1.4958E-3 3.5074E-2 5.939E-2 9.7411E-2 8.8596E-2 8.2755E-1
RTHERM1 RTHERM2 RTHERM3 RTHERM4 RTHERM5 RTHERM6
0.0384 0.0624 0.072 0.0912 0.1008 0.1152
Figure Schematic Order Network
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STP200NF04 STB200NF04 STB200NF04-1
Figure Unclamped Inductive Load Test Circuit Figure Unclamped Inductive Wafeform
Figure Switching Times Test Circuit Resistive Load
Figure Gate Charge Test Circuit
Figure Test Circuit Inductive Load Switching Diode Recovery Times
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STP200NF04 STB200NF04 STB200NF04-1
TO-220 MECHANICAL DATA
DIM. MIN. 4.40 0.61 1.15 0.49 15.25 2.40 4.95 1.23 6.20 2.40 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
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STP200NF04 STB200NF04 STB200NF04-1
D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA
DIM. MIN. 4.88 1.27 5.28 15.85 1.75 0.192 0.590 0.050 0.055 0.094 0.015 2.49 0.03 1.14 0.45 1.23 8.95 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 MAX. 2.69 0.23 0.93 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch
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STP200NF04 STB200NF04 STB200NF04-1
TO-262 (I2PAK) MECHANICAL DATA
DIM. MIN. 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 3.50 1.27 MAX. 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 3.93 1.40 MIN. 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 TYP. MAX. 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 inch
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STP200NF04 STB200NF04 STB200NF04-1
D2PAK FOOTPRINT
TUBE SHIPMENT suffix)*
TAPE REEL SHIPMENT (suffix "T4")*
REEL MECHANICAL DATA
DIM. 12.8 20.2 24.4 30.4 26.4 13.2 MIN. MAX. 0.059 0.504 0795 0.960 3.937 1.197 BULK 1000 1.039 0.520 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM. MIN. 10.5 15.7 1.59 1.65 11.4 11.9 0.25 23.7 0.35 24.3 MAX. 10.7 15.9 1.61 1.85 11.6 12.1 inch MIN. 0.413 0.618 0.059 0.062 0.065 0.449 0.189 0.153 0.468 0.075 1.574 0.0098 0.0137 0.933 0.956 MAX. 0.421 0.626 0.063 0.063 0.073 0.456 0.197 0.161 0.476 0.082
BASE 1000
sales type
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STP200NF04 STB200NF04 STB200NF04-1
Table Revision History
Date 28-Sep-2004 11-Oct-2004 Revision Description Changes Stylesheet. Content Change Final datasheet
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STP200NF04 STB200NF04 STB200NF04-1
Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specifications mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical components life support devices systems without express written approval STMicroelectronics. logo registered trademark STMicroelectronics other names property their respective owners 2004 STMicroelectronics Rights Reserved STMicroelectronics group companies Australia Belgium Brazil Canada China Czech Republic Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom United States America
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