µPA1727 DESCRIPTION µPA1727 N-Channel Field Effect Transisto

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µPA1727 DESCRIPTION µPA1727 N-Channel Field Effect Transisto

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FIELD EFFECT TRANSISTOR
µPA1727
DESCRIPTION
µPA1727 N-Channel Field Effect Transistor designed high current switching applications.
PACKAGE DRAWING (Unit
Source Gate Drain
FEATURES
Single chip type On-state Resistance
1.44
5.37 Max.
+0.10 -0.05
±0.3
RDS(on)1 (TYP.) (VGS RDS(on)2 (TYP.) (VGS RDS(on)3 (TYP.) (VGS Ciss Ciss 2400 (TYP.) Built-in protection diode Small surface mount package (Power SOP8)
Max.
0.15
0.05 Min.
±0.2 0.10
1.27 0.40
0.78 Max. 0.12
+0.10 -0.05
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
µPA1727
ABSOLUTE MAXIMUM RATINGS terminals connected.)
Drain Source Voltage (VGS Gate Source Voltage (VDS Drain Current (DC) Drain Current (Pulse)
Note1 Note2
VDSS VGSS ID(DC) ID(pulse) Tstg
EQUIVALENT CIRCUIT
Drain
Total Power Dissipation Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note3 Note3
Gate
Body Diode
Gate Protection Diode
Source
Notes Duty cycle Mounted ceramic substrate 1200 Starting Remark diode connected between gate source transistor serves protector against ESD. When this device actually used, additional protection circuit externally required voltage Exceeding rated voltage applied this device.
information this document subject change without notice. Before using this document, please confirm that this latest version.
devices/types available every country. Please check with local representative availability additional information.
Document G14330EJ1V0DS00 (1st edition) Date Published January 2000 CP(K) Printed Japan
mark shows major revised points.
1999,2000
µPA1727
ELECTRICAL CHARACTERISTICS terminals connected.)
CHARACTERISTICS Drain Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 RDS(on)3 Gate Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) IDSS IGSS Ciss Coss Crss td(on) td(off) VF(S-D) TEST CONDITIONS VGS(on) di/dt 100A/µs 2400 MIN. TYP. MAX. UNIT
TEST CIRCUIT AVALANCHE CAPABILITY
D.U.T. BVDSS
TEST CIRCUIT SWITCHING TIME
D.U.T.
Wave Form
VGS(on)
Wave Form
Duty Cycle
td(on)
td(off)
toff
Starting
TEST CIRCUIT GATE CHARGE
D.U.T.
Data Sheet G14330EJ1V0DS00
µPA1727
[MEMO]
Data Sheet G14330EJ1V0DS00
µPA1727
information this document subject change without notice. Before using this document, please confirm that this latest version. part this document copied reproduced form means without prior written consent Corporation. Corporation assumes responsibility errors which appear this document. Corporation does assume liability infringement patents, copyrights other intellectual property rights third parties arising from device described herein other liability arising from such device. license, either express, implied otherwise, granted under patents, copyrights other intellectual property rights Corporation others. Descriptions circuits, software, other related information this document provided illustrative purposes semiconductor product operation application examples. incorporation these circuits, software, information design customer's equipment shall done under full responsibility customer. Corporation assumes responsibility losses incurred customer third parties arising from these circuits, software, information. While Corporation been making continuous effort enhance reliability semiconductor devices, possibility defects cannot eliminated entirely. minimize risks damage injury persons property arising from defect semiconductor device, customers must incorporate sufficient safety measures design, such redundancy, fire-containment, anti-failure features. devices classified into following three quality grades: "Standard", "Special", "Specific". Specific quality grade applies only devices developed based customer designated "quality assurance program" specific application. recommended applications device depend quality grade, indicated below. Customers must check quality grade each device before using particular application. Standard: Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade devices "Standard" unless otherwise specified NEC's Data Sheets Data Books. customers intend devices applications other than those specified Standard quality grade, they should contact sales representative advance.

µPA1727 DESCRIPTION µPA1727 N-Channel Field Effect Transisto

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