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N-CHANNEL 500V -0.23- TO-220/D2PAK/I2SPAK/TO-247 Zener-Protected Super
Top Searches for this datasheetSTP20NK50Z STW20NK50Z STB20NK50Z STB20NK50Z-S N-CHANNEL 500V -0.23- TO-220/D2PAK/I2SPAK/TO-247 Zener-Protected SuperMESHMOSFET TYPE STB20NK50Z STB20NK50Z-S STP20NK50Z STW20NK50Z VDSS RDS(on) 0.27 0.27 0.27 0.27 TYPICAL RDS(on) 0.23 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTEDGATE CHARGE MINIMIZED VERY INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-220 TO-247 I2SPAK D2PAK DESCRIPTION SuperMESHseries obtained through extreme optimization ST's well established stripbased PowerMESHlayout. addition pushing on-resistance significantly down, special care taken ensure very good dv/dt capability most demanding applications. Such series complements full range high voltage MOSFETs including revolutionary MDmeshproducts. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL OFF-LINE POWER SUPPLIES, ADAPTORS ORDERING INFORMATION SALES TYPE STB20NK50ZT4 STB20NK50Z-S STP20NK50Z STW20NK50Z 2004 MARKING B20NK50Z B20NK50Z P20NK50Z W20NK50Z PACKAGE D2PAK I2SPAK TO-220 TO-247 PACKAGING TAPE REEL TUBE TUBE TUBE 1/13 STP20NK50Z STB20NK50Z STW20NK50Z STB20NK50Z-S ABSOLUTE MAXIMUM RATINGS Symbol VDGR PTOT VESD(G-S) dv/dt Tstg Parameter Drain-source Voltage (VGS Drain-gate Voltage (RGS Gate- source Voltage Drain Current (continuous) 25°C Drain Current (continuous) 100°C Drain Current (pulsed) Total Dissipation 25°C Derating Factor Gate source ESD(HBM-C=100 R=1.5 Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature Value 10.71 1.51 6000 Unit W/°C V/ns Pulse width limited safe operating area 17A, di/dt 200A/µs, V(BR)DSS, JMAX. Limited only maximum temperature allowed THERMAL DATA TO-220/D2PAK Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature Soldering Purpose 62.5 0.66 TO-247 °C/W °C/W AVALANCHE CHARACTERISTICS Symbol Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting IAR, Value Unit GATE-SOURCE ZENER DIODE Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs=± (Open Drain) Min. Typ. Max. Unit PROTECTION FEATURES GATE-TO-SOURCE ZENER DIODES built-in back-to-back Zener diodes have specifically been designed enhance only device's capability, also make them safely absorb possible voltage transients that occasionally applied from gate source. this respect Zener voltage appropriate achieve efficient cost-effective intervention protect device's integrity. These integrated Zener diodes thus avoid usage external components. 2/13 STP20NK50Z STB20NK50Z STW20NK50Z STB20NK50Z-S ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS Gate-body Leakage Current (VDS Gate Threshold Voltage Static Drain-source Resistance Test Conditions Rating Rating, VGS, 10V, 3.75 0.23 Min. 0.27 Typ. Max. Unit DYNAMIC Symbol Ciss Coss Crss Coss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Test Conditions 25V, MHz, Min. Typ. 2600 Max. Unit 640V SWITCHING ON/OFF Symbol td(on) td(off) Parameter Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions (Resistive Load see, Figure Min. Typ. 15.5 Max. Unit SOURCE DRAIN DIODE Symbol ISDM IRRM IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt A/µs 25°C (see test circuit, Figure di/dt A/µs 150°C (see test circuit, Figure 3.90 5.72 Test Conditions Min. Typ. Max. Unit Note: Pulsed: Pulse duration duty cycle Pulse width limited safe operating area. Coss defined constant equivalent capacitance giving same charging time Coss when increases from VDSS. 3/13 STP20NK50Z STB20NK50Z STW20NK50Z STB20NK50Z-S Safe Operating Area TO-220 D2PAK/ I2SPAK Thermal Impedance TO-220 D2PAK/I2SPAK Safe Operating Area TO-247 Thermal Impedance TO-247 Output Characteristics Transfer Characteristics 4/13 STP20NK50Z STB20NK50Z STW20NK50Z STB20NK50Z-S Transconductance Static Drain-source Resistance Gate Charge Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage Temp. Normalized Resistance Temperature 5/13 STP20NK50Z STB20NK50Z STW20NK50Z STB20NK50Z-S Source-drain Diode Forward Characteristics Normalized BVDSS Temperature Maximum Avalanche Energy Temperature 6/13 STP20NK50Z STB20NK50Z STW20NK50Z STB20NK50Z-S Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform Fig. Switching Times Test Circuit Resistive Load Fig. Gate Charge test Circuit Fig. Test Circuit Inductive Load Switching Diode Recovery Times 7/13 STP20NK50Z STB20NK50Z STW20NK50Z STB20NK50Z-S TO-220 MECHANICAL DATA MIN. 4.40 0.61 1.15 0.49 15.25 2.40 4.95 1.23 6.20 2.40 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 DIM. 8/13 STP20NK50Z STB20NK50Z STW20NK50Z STB20NK50Z-S D2PAK MECHANICAL DATA DIM. MIN. 4.88 1.27 5.28 15.85 1.75 0.192 0.590 0.050 0.055 0.094 2.49 0.03 1.14 0.45 1.23 8.95 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 MAX. 2.69 0.23 0.93 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 9/13 STP20NK50Z STB20NK50Z STW20NK50Z STB20NK50Z-S TO-247 MECHANICAL DATA MIN. 4.85 2.20 0.40 10.90 15.45 19.85 3.70 18.50 14.20 34.60 5.50 3.55 3.65 0.14 0.07 0.143 14.80 0.56 1.36 0.21 0.11 15.75 20.15 4.30 0.60 0.78 0.14 0.72 0.58 2.40 3.40 0.07 0.11 0.43 0.62 0.79 0.17 MAX. 5.15 2.60 0.80 1.40 MIN. 0.19 0.08 0.015 0.04 0.11 0.07 0.09 0.13 inch TYP. MAX. 0.20 0.10 0.03 0.05 DIM. 10/13 STP20NK50Z STB20NK50Z STW20NK50Z STB20NK50Z-S I2SPAK MECHANICAL DATA MIN. 4.40 2.49 0.70 1.14 0.45 1.23 8.95 10.00 4.88 16.7 1.27 13.82 MAX. 4.60 2.69 0.93 1.70 0.60 1.36 9.35 10.40 5.28 17.5 14.42 MIN. 0.173 0.098 0.027 0.045 0.018 0.048 0.352 0.394 0.192 0.657 0.05 0.544 inch TYP. MAX. 0.181 0.106 0.037 0.067 0.024 0.053 0.368 0.409 0.208 0.689 0.055 0.568 DIM. 11/13 STP20NK50Z STB20NK50Z STW20NK50Z STB20NK50Z-S D2PAK FOOTPRINT TUBE SHIPMENT suffix)* TAPE REEL SHIPMENT (suffix "T4")* REEL MECHANICAL DATA DIM. 12.8 20.2 24.4 30.4 26.4 13.2 MIN. MAX. 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. MIN. 10.5 15.7 1.59 1.65 11.4 11.9 0.25 MAX. 10.7 15.9 1.61 1.85 11.6 12.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 BASE 1000 sales type 12/13 STP20NK50Z STB20NK50Z STW20NK50Z STB20NK50Z-S Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specifications mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. 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