AUTOMOTIVE MOSFET Logic Level Advanced Process Technology Ultra O

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AUTOMOTIVE MOSFET Logic Level Advanced Process Technology Ultra O

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94804B
AUTOMOTIVE MOSFET
Logic Level Advanced Process Technology Ultra On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed Tjmax
IRL1404Z IRL1404ZS IRL1404ZL
HEXFET® Power MOSFET
VDSS RDS(on) 3.1m
Description
Specifically designed Automotive applications, this HEXFET® Power MOSFET utilizes latest processing techniques achieve extremely on-resistance silicon area. Additional features this design 175°C junction operating temperature, fast switching speed improved repetitive avalanche rating These features combine make this design extremely efficient reliable device Automotive applications wide variety other applications.
TO-220AB IRL1404Z
D2Pak IRL1404ZS
TO-262 IRL1404ZL
Absolute Maximum Ratings
Parameter
25°C Continuous Drain Current, (Silicon Limited) 100°C Continuous Drain Current, 25°C Continuous Drain Current, (Package Limited) Pulsed Drain Current 25°C Power Dissipation (Tested TSTG
Max.
Units
W/°C
Linear Derating Factor Gate-to-Source Voltage (Thermally limited) Single Pulse Avalanche Energy Avalanche Current
Single Pulse Avalanche Energy Tested Value Repetitive Avalanche Energy Operating Junction Storage Temperature Range Soldering Temperature, seconds Mounting Torque, 6-32 screw
Fig.12a, 12b,
(1.6mm from case (1.1N
Thermal Resistance
Parameter
Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
Max.
0.65
Units
°C/W
0.50
Junction-to-Ambient (PCB Mount)
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6/1/04
IRL1404Z/S/L
Electrical Characteristics 25°C (unless otherwise specified)
Parameter
V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss Coss Coss Coss eff. Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Min. Typ. Max. Units
0.034 5080 3310 1280 -200
Conditions
250µA V/°C Reference 25°C, 10V, 5.0V, 4.5V, VGS, 250µA 10V, 40V, 40V, 125°C -16V 5.0V 5.0V Between lead,
(0.25in.) from package
center contact 1.0MHz 1.0V, 1.0MHz 32V, 1.0MHz
Source-Drain Ratings Characteristics
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol showing integral reverse
junction diode. 25°C, 75A, 25°C, 75A, di/dt 100A/µs
Intrinsic turn-on time negligible (turn-on dominated LS+LD)
Notes: Repetitive rating; pulse width limited max. junction temperature. (See fig. 11). Limited TJmax, starting 25°C, 0.079mH, 75A, =10V. Part recommended above this value. Pulse width 1.0ms; duty cycle Coss eff. fixed capacitance that gives same charging time Coss while rising from VDSS
Limited TJmax Fig.12a, 12b, typical
repetitive avalanche performance.
This value determined from sample failure population. 100%
tested this value production.
This only applied TO-220AB package. When mounted square (FR-4 G-10 Material).
recommended footprint soldering techniques refer application note #AN-994.
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IRL1404Z/S/L
1000
7.0V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V
1000
7.0V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V
Drain-to-Source Current
BOTTOM
Drain-to-Source Current
BOTTOM
3.0V
3.0V 60µs PULSE WIDTH 25°C
60µs PULSE WIDTH 175°C
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
1000 175°C
Gfs, Forward Transconductance
Drain-to-Source Current
25°C
175°C
25°C 60µs PULSE WIDTH
ID,Drain-to-Source Current
VGS, Gate-to-Source Voltage
Typical Transfer Characteristics
Typical Forward Transconductance Drain Current
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IRL1404Z/S/L
100000
VGS, Gate-to-Source Voltage
SHORTED
VDS= VDS=
Capacitance(pF)
10000
Ciss
1000
Coss Crss
VDS, Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000.00
10000 OPERATION THIS AREA LIMITED DS(on)
175°C
100.00
Drain-to-Source Current
ISD, Reverse Drain Current
1000
100µsec 25°C 175°C Single Pulse
10.00 25°C
1msec
1.00
10msec 1000
VSD, Source-to-Drain Voltage
VDS, Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRL1404Z/S/L
Limited Package
Drain Current
RDS(on) Drain-to-Source Resistance (Normalized)
Case Temperature (°C)
Junction Temperature (°C)
Maximum Drain Current Case Temperature
Normalized On-Resistance Temperature
0.50
Thermal Response thJC
0.20 0.10 0.05 0.02 0.01 SINGLE PULSE THERMAL RESPONSE
0.01
0.001
i/Ri i/Ri
(°C/W) (sec) 0.000213 0.185 0.241 0.001234 0.227 0.021750
Notes: Duty Factor t1/t2 Peak Zthjc
1E-006 1E-005 0.0001 0.001 0.01
0.0001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRL1404Z/S/L
Single Pulse Avalanche Energy (mJ)
DRIVER
BOTTOM
D.U.T
0.01
12a. Unclamped Inductive Test Circuit
V(BR)DSS
Starting Junction Temperature (°C)
12b. Unclamped Inductive Waveforms
12c. Maximum Avalanche Energy Drain Current
VGS(th) Gate threshold Voltage
Charge
13a. Basic Gate Charge Waveform
Current Regulator Same Type D.U.T.
250µA
.2µF .3µF
D.U.T.
Temperature
Current Sampling Resistors
13b. Gate Charge Test Circuit
Threshold Voltage Temperature
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IRL1404Z/S/L
1000
Avalanche Current
Duty Cycle Single Pulse 0.01 0.05 0.10
Allowed avalanche Current avalanche pulsewidth, assuming 25°C avalanche losses
1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
(sec)
Typical Avalanche Current vs.Pulsewidth
Avalanche Energy (mJ)
Single Pulse BOTTOM Duty Cycle
Starting Junction Temperature (°C)
Notes Repetitive Avalanche Curves Figures (For further info, AN-1005 www.irf.com) Avalanche failures assumption: Purely thermal phenomenon failure occurs temperature excess jmax. This validated every part type. Safe operation Avalanche allowed long jmax exceeded. Equation below based circuit waveforms shown Figures 12a, 12b. (ave) Average power dissipation single avalanche pulse. Rated breakdown voltage (1.3 factor accounts voltage increase during avalanche). Allowable avalanche current. Allowable rise junction temperature, exceed Tjmax (assumed 25°C Figure 16). Average time avalanche. Duty cycle avalanche ZthJC(D, Transient thermal resistance, figure (ave) ZthJC 2DT/ (AR)
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Maximum Avalanche Energy Temperature
IRL1404Z/S/L
D.U.T
Driver Gate Drive
P.W.
Period
P.W. Period VGS=10V
Circuit Layout Considerations Stray Inductance Ground Plane Leakage Inductance Current Transformer
D.U.T. Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt
dv/dt controlled Driver same type D.U.T. controlled Duty Factor D.U.T. Device Under Test
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple
Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit N-Channel HEXFET® Power MOSFETs
Pulse Width Duty Factor
D.U.T.
18a. Switching Time Test Circuit
td(on) d(off)
18b. Switching Time Waveforms
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IRL1404Z/S/L
TO-220AB Package Outline
10.54 (.415) 10.29 (.405)
Dimensions shown millimeters (inches)
2.87 (.113) 2.62 (.103)
3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240)
-B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048)
15.24 (.600) 14.84 (.584)
1.15 (.045)
LEAD ASSIGNMENTS GATE DRAIN SOURCE DRAIN
14.09 (.555) 13.47 (.530)
4.06 (.160) 3.55 (.140)
1.40 (.055) 1.15 (.045) 2.54 (.100) NOTES:
0.93 (.037) 0.69 (.027)
0.55 (.022) 0.46 (.018)
0.36 (.014)
2.92 (.115) 2.64 (.104)
DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION INCH
OUTLINE CONFORMS JEDEC OUTLINE TO-220AB. HEATSINK LEAD MEASUREMENTS INCLUDE BURRS.
TO-220AB Part Marking Information
@Y6HQG@) 6TT@H7G@9
Note: assembly line position indicates "Lead-Free"
DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G`
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IRL1404Z/S/L
D2Pak Package Outline
Dimensions shown millimeters (inches)
D2Pak Part Marking Information
DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` A$"T A$"T
DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G`
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IRL1404Z/S/L
TO-262 Package Outline
Dimensions shown millimeters (inches)
IGBT GATE COLLECTOR EMITTER
TO-262 Part Marking Information
@Y6HQG@) DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G`
DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G`
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IRL1404Z/S/L
D2Pak Tape Reel Information
Dimensions shown millimeters (inches)
1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)
1.60 (.063) 1.50 (.059)
0.368 (.0145) 0.342 (.0135)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
11.60 (.457) 11.40 (.449)
15.42 (.609) 15.22 (.601)
24.30 (.957) 23.90 (.941)
10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178)
FEED DIRECTION
13.50 (.532) 12.80 (.504)
27.40 (1.079) 23.90 (.941)
330.00 (14.173) MAX.
60.00 (2.362) MIN.
NOTES COMFORMS EIA-418. CONTROLLING DIMENSION: MILLIMETER. DIMENSION MEASURED HUB. INCLUDES FLANGE DISTORTION OUTER EDGE.
26.40 (1.039) 24.40 (.961)
30.40 (1.197) MAX.
TO-220AB packages recommended Surface Mount Application.
Data specifications subject change without notice. This product been designed qualified Automotive [Q101] market. Qualification Standards found IR's site.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. 6/04
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AUTOMOTIVE MOSFET Logic Level Advanced Process Technology Ultra O

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