INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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95229A
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF
VCES 600V 7.0A, TC=100°
Features
(on) Punch Through IGBT Technology. Diode 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics. Positive (on) Temperature Coefficient. Lead-Free
10µs, TJ=150°
n-channel
VCE(on) typ. 1.8V
Benefits
Benchmark Efficiency Motor Control. Rugged Transient Performance. EMI. Excellent Current Sharing Parallel Operation.
TO-220AB IRGB6B60KD
D2Pak TO-262 IRGS6B60KD IRGSL6B60KD Max.
+150
Absolute Maximum Ratings
Parameter
VCES 25°C 100°C 25°C 100°C 25°C 100°C TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction Storage Temperature Range Soldering Temperature, sec.
Units
(0.063 (1.6mm) from case)
Thermal Resistance
Parameter
Junction-to-Case IGBT Junction-to-Case Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Junction-to-Ambient (PCB Mount, steady state) Weight
Min.
Typ.
0.50 1.44
Max.
Units
°C/W
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11/18/04
IRGB/S/SL6B60KDPbF
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ
VCE(on) VGE(th)
VGE(th)/TJ
ICES IGES
Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage Temperature Coeff. Breakdown Voltage Collector-to-Emitter Saturation Voltage 1.80 2.20 Gate Threshold Voltage Temperature Coeff. Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Diode Forward Voltage Drop 1.25 1.20 Gate-to-Emitter Leakage Current
Max. Units Conditions 500µA V/°C 1.0mA, (25°C-150°C) 2.20 5.0A, 2.50 5.0A,VGE 15V, 150°C VGE, 250µA mV/°C VGE, 1.0mA, (25°C-150°C) 50V, 5.0A, PW=80µs 600V 600V, 150°C 1.45 5.0A 1.40 5.0A 150°C ±100 ±20V
Ref.Fig.
9,10,11 9,10,11
Switching Characteristics 25°C (unless otherwise specified)
Eoff Etot td(on) td(off) Eoff Etot td(on) td(off) Cies Coes Cres RBSOA SCSOA Erec Parameter Total Gate Charge (turn-on) Gate Emitter Charge (turn-on) Gate Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operting Area Short Circuit Safe Operting Area Reverse Recovery energy diode Diode Reverse Recovery time Diode Peak Reverse Recovery Current Min.
Ref.Fig. Max. Units Conditions 5.0A 400V 5.0A, 400V 15V,R 100, =1.4mH 150nH 25°C 5.0A, 400V 15V, =1.4mH 150nH, 25°C 5.0A, 400V 13,15 15V,R 100, =1.4mH WF1WF2 150nH 150°C 5.0A, 400V 15V, =1.4mH 150nH, 150°C 1.0MHz 150°C, 26A, =600V FULL SQUARE 500V, +15V 0V,RG 150°C, =600V, 360V, +15V 17,18,19 150°C 400V, 5.0A, 1.4mH CT4,WF3 15V,RG 100, 150nH
Typ. 18.2 13.2
Note: page
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IRGB/S/SL6B60KDPbF
Ptot
(°C)
(°C)
Fig. Maximum Collector Current Case Temperature
Fig. Power Dissipation Case Temperature
1000 10000
1000
Fig. Forward 25°C; 150°
Fig. Reverse Bias 150°C; =15V
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IRGB/S/SL6B60KDPbF
8.0V
8.0V
Fig. Typ. IGBT Output Characteristics -40°C; 80µs
Fig. Typ. IGBT Output Characteristics 25°C; 80µs
8.0V
-40°C 25°C 150°
Fig. Typ. IGBT Output Characteristics 150°C; 80µs
Fig. Typ. Diode Forward Characteristics 80µs
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IRGB/S/SL6B60KDPbF
3.0A 5.0A 3.0A 5.0A
Fig. Typical -40°
Fig. Typical
3.0A 5.0A
25°C 150°
150°C 25°C
Fig. Typical 150°
Fig. Typ. Transfer Characteristics 50V; 10µs
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IRGB/S/SL6B60KDPbF
Energy (µJ)
1000
tdOFF
Swiching Time (ns)
EOFF
tdON
Fig. Typ. Energy Loss 150°C; L=1.4mH; VCE= 400V 100; VGE=
Fig. Typ. Switching Time 150°C; L=1.4mH; VCE= 400V 100; VGE=
1000
EOFF
Swiching Time (ns)
tdOFF
Energy (µJ)
tdON
Fig. Typ. Energy Loss 150°C; L=1.4mH; VCE= 400V ICE= 5.0A; VGE=
Fig. Typ. Switching Time 150°C; L=1.4mH; VCE= 400V ICE= 5.0A; VGE=
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IRGB/S/SL6B60KDPbF
Fig. Typical Diode 150°
Fig. Typical Diode 150°C; 5.0A
1200 1000
1000
(µC)
5.0A 3.0A
1000
(A/µs)
(A/µs)
Fig. Typical Diode diF/dt VCC= 400V; VGE= 15V; ICE= 5.0A; 150°
Fig. Typical Diode VCC= 400V; VGE= 15V;TJ 150°
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IRGB/S/SL6B60KDPbF
Energy (µJ)
Fig. Typical Diode 150°
1000
Cies
300V 400V
Capacitance (pF)
Coes
Cres
Total Gate Charge (nC)
Fig. Typ. Capacitance VGE= 1MHz
Fig. Typical Gate Charge 5.0A; 600µH
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IRGB/S/SL6B60KDPbF
Thermal Response thJC
0.50 0.20 0.10 0.05 0.01 0.02
(°C/W) (sec) 0.708 0.00022 0.447 0.219 0.00089 0.01037
i/Ri i/Ri
0.01
SINGLE PULSE THERMAL RESPONSE
Notes: Duty Factor t1/t2 Peak Zthjc
1E-4 1E-3 1E-2 1E-1
0.001 1E-6 1E-5
Rectangular Pulse Duration (sec)
Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
Thermal Response thJC
0.50
0.20 0.10 0.05 0.01 0.02
(°C/W) (sec) 1.194 0.000172 2.424 0.001517 0.753 0.080325
i/Ri i/Ri
0.01
SINGLE PULSE THERMAL RESPONSE
Notes: Duty Factor t1/t2 Peak Zthjc
1E-3 1E-2 1E-1 1E+0
0.001 1E-6 1E-5 1E-4
Rectangular Pulse Duration (sec)
Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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IRGB/S/SL6B60KDPbF
480V
Fig.C.T.1 Gate Charge Circuit (turn-off)
Fig.C.T.2 RBSOA Circuit
diode clamp
Driver
360V
DRIVER
Fig.C.T.3 S.C.SOA Circuit
Fig.C.T.4 Switching Loss Circuit
Fig.C.T.5 Resistive Load Circuit
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IRGB/S/SL6B60KDPbF
TEST CURRENT
-0.20
Loss
test current
test current
Loss
0.80
0.30 time(µs)
-100 16.00
16.10
16.20 time (µs)
16.30
16.40
Fig. WF1- Typ. Turn-off Loss Waveform 150°C using Fig. CT.4
-100 -150 -200 -250 -300 -350 -400 -450 -0.06
Peak Peak
Fig. WF2- Typ. Turn-on Loss Waveform 150°C using Fig. CT.4
0.04 0.14 0.24 time (µS)
-5.00
0.00
5.00 time (µS)
10.00
15.00
Fig. WF3- Typ. Diode Recovery Waveform 150°C using Fig. CT.4
Fig. WF4- Typ. Waveform 150°C using Fig. CT.3
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IRGB/S/SL6B60KDPbF
TO-220AB Package Outline
Dimensions shown millimeters (inches)
TO-220AB Part Marking Information
XAMPL 1010 CODE 1789 1997 IONAL CODE
Note: assembly line position indicates "Lead-Free"
CODE 1997
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IRGB/S/SL6B60KDPbF
D2Pak Package Outline
Dimensions shown millimeters (inches)
D2Pak Part Marking Information
THIS IRF530S CODE 8024 EMBLE 2000 EMBL LINE Note: sembly line ition indicates ead-F ree" ERNAT IONAL ECTIFIER LOGO EMBLY CODE PART NUMBER F530S CODE YEAR 2000 LINE
RNAT IONAL LOGO PART NUMBE 530S CODE SIGNAT AD-F PRODUCT (OPT IONAL) YEAR 2000 MBLY CODE EMBLY CODE
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IRGB/S/SL6B60KDPbF
TO-262 Package Outline
Dimensions shown millimeters (inches)
TO-262 Part Marking Information
XAMPLE 3103L CODE 1789 1997 Note: embly line ition indicates "Lead-Free" RNAT IONAL LOGO CODE PART NUMBE
CODE 1997 LINE
RNAT IONAL CODE PART NUMBE CODE IGNAT AD-F PRODUCT (OPTIONAL) 1997 CODE
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IRGB/S/SL6B60KDPbF
D2Pak Tape Reel Information
Dimensions shown millimeters (inches)
1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)
1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
11.60 (.457) 11.40 (.449)
15.42 (.609) 15.22 (.601)
24.30 (.957) 23.90 (.941)
10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178)
FEED DIRECTION
13.50 (.532) 12.80 (.504)
27.40 (1.079) 23.90 (.941)
330.00 (14.173) MAX.
60.00 (2.362) MIN.
NOTES COMFORMS EIA-418. CONTROLLING DIMENSION: MILLIMETER. DIMENSION MEASURED HUB. INCLUDES FLANGE DISTORTION OUTER EDGE.
26.40 (1.039) 24.40 (.961)
30.40 (1.197) MAX.
Notes: This only applied TO-220AB package This applied D2Pak, when mounted square FR-4 G-10 Material
recommended footprint soldering techniques refer application note #AN-994.
Energy losses include "tail" diode reverse recovery. (VCES), 20V, 100. TO-220 package recommended Surface Mount Application Data specifications subject change without notice. This product been designed qualified Industrial market. Qualification Standards found IR's site.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. 11/04
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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