INSULATED GATE BIPOLAR TRANSISTOR IRG4BC40WS IRG4BC40WL Feat
|
|
|
Top Searches for this datasheet
95861
INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC40WS IRG4BC40WL
Features
Designed expressly Switch-Mode Power Supply (power factor correction) applications Industry-benchmark switching losses improve efficiency power supply topologies reduction Eoff parameter IGBT conduction losses Latest-generation IGBT design construction offers tighter parameters distribution, exceptional reliability
VCES 600V
VCE(on) typ. 2.05V
@VGE 15V,
n-channel
Benefits
Lower switching losses allow more cost-effective operation than power MOSFETs ("hard switched" mode) particular benefit single-ended converters boost topologies 150W higher conduction losses minimal minority-carrier recombination make these excellent option resonant mode switching well >>300 kHz)
D2Pak IRG4BC40WS
TO-262 IRG4BC40WL
Absolute Maximum Ratings
Parameter
VCES 25°C 100°C EARV 25°C 100°C TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction Storage Temperature Range Soldering Temperature, seconds
Max.
(0.063 (1.6mm) from case
Units
Thermal Resistance
Parameter
Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient (PCB Mounted steady-state) Weight
Typ.
(0.07)
Max.
0.77
Units
°C/W (oz)
www.irf.com
4/19/04
IRG4BC40WS/L
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)CES V(BR)ECS
V(BR)CES/TJ
VCE(ON) VGE(th) VGE(th)/TJ ICES IGES
Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 250µA Emitter-to-Collector Breakdown Voltage 1.0A Temperature Coeff. Breakdown Voltage 0.44 V/°C 1.0mA 2.05 Collector-to-Emitter Saturation Voltage 2.36 Fig.2, 1.90 150°C Gate Threshold Voltage VGE, 250µA Temperature Coeff. Threshold Voltage mV/°C VGE, 250µA Forward Transconductance =20A 600V Zero Gate Voltage Collector Current 10V, 25°C 2500 600V, 150°C Gate-to-Emitter Leakage Current ±100 ±20V
Switching Characteristics 25°C (unless otherwise specified)
td(on) td(off) Eoff td(on) td(off) Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate Emitter Charge (turn-on) Gate Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. 0.11 0.23 0.34 0.85 1900 Max. Units Conditions =20A 400V Fig.8 25°C 20A, 480V 15V, Energy losses include "tail" Fig. 9,10, 0.45 150°C, 20A, 480V 15V, Energy losses include "tail" Fig. 10,11, Measured from package Fig. 1.0MHz
Repetitive rating; 20V, pulse width limited
max. junction temperature. fig. (See fig. 13a)
80%(VCES), 20V, 10µH, Repetitive rating; pulse width limited maximum
junction temperature.
Pulse width 80µs; duty factor 0.1%. Pulse width 5.0µs, single shot.
www.irf.com
IRG4BC40WS/L
both:
Triangular wave:
Load Current
Duty cycle: 125°C Tsink 90°C Gate drive specified Power Dissipation
Clamp voltage: rated
Square wave: rated voltage
Ideal diodes
1000
Frequency (kHz)
Fig. Typical Load Current Frequency
(Load Current IRMS fundamental)
1000
1000
Collector-to-Emitter Current
Collector-to-Emitter Current
80µs PULSE WIDTH
PULSE WIDTH
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
Fig. Typical Output Characteristics
Fig. Typical Transfer Characteristics
www.irf.com
IRG4BC40WS/L
Collector-to-Emitter Voltage(V)
PULSE WIDTH
Maximum Collector Current(A)
Case Temperature
Junction Temperature
Fig. Maximum Collector Current Case Temperature
Fig. Typical Collector-to-Emitter Voltage Junction Temperature
Thermal Response thJC
0.50
0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJC 0.001 0.01
0.01 0.00001
0.0001
Rectangular Pulse Duration (sec)
Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
IRG4BC40WS/L
4000
Gate-to-Emitter Voltage
1MHz Cies SHORTED Cres Coes
400V
Capacitance (pF)
3000
Cies
2000
Coes
1000
Cres
Collector-to-Emitter Voltage
Total Gate Charge (nC)
Fig. Typical Capacitance Collector-to-Emitter Voltage
Fig. Typical Gate Charge Gate-to-Emitter Voltage
Total Switching Losses (mJ)
Total Switching Losses (mJ)
480V
10Ohm 480V
Gate Resistance() (Ohm)
Junction Temperature
Fig. Typical Switching Losses Gate Resistance
Fig. Typical Switching Losses Junction Temperature
www.irf.com
IRG4BC40WS/L
Collector-to-Emitter Current
Total Switching Losses (mJ)
10Ohm 480V
1000
SAFE OPERATING AREA
1000
Collector-to-emitter Current
Collector-to-Emitter Voltage
Fig. Typical Switching Losses Collector-to-Emitter Current
Fig. Turn-Off
www.irf.com
IRG4BC40WS/L
1000V
480V
D.U.T.
480V IC@25°
480µF 960V
Driver same type D.U.T.; Vce(max) Note: power supply, pulse width inductor will increase obtain rated
Fig. Clamped Inductive
Load Test Circuit
Fig. Pulsed Collector
Current Test Circuit
Driver* D.U.T.
Fig. Switching Loss
Test Circuit
Driver same type D.U.T., 480V
1000V
d(off)
Fig. Switching Loss
Waveforms
d(on)
(Eon +Eoff
t=5µs
www.irf.com
IRG4BC40WS/L
D2Pak Package Outline
Dimensions shown millimeters (inches)
D2Pak Part Marking Information
IRF530S CODE 8024 SEMBLED 2000 SEMBLY LINE Note: assembly line ition indicates "Lead-Free" ERNAT IONAL RECT IFIER LOGO SEMBLY CODE PART NUMBER F530S CODE YEAR 2000 WEEK LINE
ERNAT IONAL RECT IFIER LOGO EMBLY CODE
PART NUMBER F530S CODE IGNAT LEAD-FREE PRODUCT (OPT IONAL) YEAR 2000 WEEK SEMBLY CODE
www.irf.com
IRG4BC40WS/L
TO-262 Package Outline
Dimensions shown millimeters (inches)
IGBT GATE COLLEC-
TO-262 Part Marking Information
EXAMPLE: IRL3103L CODE 1789 EMBLED 1997 EMBLY LINE Note: assembly line position indicates "Lead-Free" INTERNATIONAL RECT IFIER LOGO EMBLY CODE PART NUMBER
CODE YEAR 1997 WEEK LINE
INTERNAT IONAL RECT IFIER LOGO EMBLY CODE PART NUMBER CODE IGNAT LEAD-FREE PRODUCT (OPTIONAL) YEAR 1997 WEEK EMBLY CODE
www.irf.com
IRG4BC40WS/L
D2Pak Tape Reel Information
Dimensions shown millimeters (inches)
1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)
1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
11.60 (.457) 11.40 (.449)
15.42 (.609) 15.22 (.601)
24.30 (.957) 23.90 (.941)
10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178)
FEED DIRECTION
13.50 (.532) 12.80 (.504)
27.40 (1.079) 23.90 (.941)
330.00 (14.173) MAX.
60.00 (2.362) MIN.
NOTES COMFORMS EIA-418. CONTROLLING DIMENSION: MILLIMETER. DIMENSION MEASURED HUB. INCLUDES FLANGE DISTORTION OUTER EDGE.
26.40 (1.039) 24.40 (.961)
30.40 (1.197) MAX.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. 4/04
www.irf.com
Other recent searches
SCCS023A - SCCS023A SCCS023A Datasheet
PCI-8056 - PCI-8056 PCI-8056 Datasheet
MN101E31 - MN101E31 MN101E31 Datasheet
MN101E31D - MN101E31D MN101E31D Datasheet
MN101E31G - MN101E31G MN101E31G Datasheet
MN101EF31D - MN101EF31D MN101EF31D Datasheet
MN101EF31G - MN101EF31G MN101EF31G Datasheet
MMVL3700T1 - MMVL3700T1 MMVL3700T1 Datasheet
HMC706LC3C - HMC706LC3C HMC706LC3C Datasheet
EPR1534S - EPR1534S EPR1534S Datasheet
CDDF-4M6-006 - CDDF-4M6-006 CDDF-4M6-006 Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
