General Purpose Transistor Array CA3086 consists five general-pur

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CA3086
General Purpose Transistor Array
CA3086 consists five general-purpose silicon transistors common monolithic substrate. transistors internally connected form differentially connected pair. transistors CA3086 well suited wide variety applications low-power systems frequencies from 120MHz. They used discrete transistors conventional circuits. However, they also provide very significant inherent advantages unique integrated circuits, such compactness, ease physical handling thermal matching
Applications
Three Isolated Transistors Differentially Connected Transistor Pair Low-Power Applications from 120MHz General-Purpose Signal Processing Systems Operating 190MHz Range Temperature Compensated Amplifiers Application Note, AN5296 "Application CA3018 Integrated-Circuit Transistor Array" Suggested Applications
Ordering Information
PART NUMBER (BRAND) CA3086 CA3086M (3086) CA3086M96 (3086) CA3086F TEMP. RANGE (oC) PACKAGE PDIP SOIC SOIC Tape Reel CERDIP PKG. E14.3 M14.15 M14.15 F14.3
Pinout
CA3086 (PDIP, CERDIP, SOIC) VIEW
SUBSTRATE
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. 1-888-INTERSIL 321-724-7143 Copyright Intersil Corporation 1999
File Number
483.3
5-27
CA3086
Absolute Maximum Ratings
following ratings apply each transistor device: Collector-to-Emitter Voltage, VCEO Collector-to-Base Voltage, VCBO Collector-to-Substrate Voltage, VCIO (Note Emitter-to-Base Voltage, VEBO Collector Current, 50mA
Thermal Information
Thermal Resistance (Typical, Note (oC/W) (oC/W) CERDIP Package PDIP Package SOIC Package Maximum Power Dissipation (Any transistor). 300mW Maximum Junction Temperature (Hermetic Packages) 175oC Maximum Junction Temperature (Plastic Package) 150oC Maximum Storage Temperature Range -65oC 150oC Maximum Lead Temperature (Soldering 10s) 300oC (SOIC Lead Tips Only)
Operating Conditions
Temperature Range -55oC 125oC
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTES: collector each transistor CA3086 isolated from substrate integral diode. substrate (Terminal must connected most negative point external circuit maintain isolation between transistors provide normal transistor action. avoid undesirable coupling between transistors, substrate (Terminal should maintained either signal (AC) ground. suitable bypass capacitor used establish signal ground. measured with component mounted evaluation board free air.
Electrical Specifications
PARAMETER
25oC, Equipment Design SYMBOL V(BR)CBO V(BR)CEO V(BR)ClO V(BR)EBO ICBO ICEO TEST CONDITIONS 10µA, 1mA, 10µA, 10µA, 10V, 10V, 0.002 (Figure UNITS
Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Substrate Breakdown Voltage Emitter-to-Base Breakdown Voltage Collector-Cutoff Current (Figure Collector-Cutoff Current (Figure Forward-Current Transfer Ratio (Figure
Electrical Specifications
PARAMETER
25oC, Typical Values Intended Only Design Guidance TYPICAL VALUES 0.715 0.800 -1.9 0.23 mV/oC
SYMBOL
TEST CONDITIONS 10mA 10µA
UNITS
Forward-Current Transfer Ratio (Figure Base-to-Emitter Voltage (Figure
10mA
Temperature Coefficient (Figure Collector-to-Emitter Saturation Voltage Noise Figure (Low Frequency)
VBE/T
1mA, 10mA 1kHz, 100µA,
3.25
5-28
CA3086
Electrical Specifications
PARAMETER Low-Frequency, Small-Signal EquivalentCircuit Characteristics: Forward Current-Transfer Ratio (Figure Short-Circuit Input Impedance (Figure Open-Circuit Output Impedance (Figure Open-Circuit Reverse-Voltage Transfer Ratio (Figure Admittance Characteristics: Forward Transfer Admittance (Figure Input Admittance (Figure Output Admittance (Figure Reverse Transfer Admittance (Figure Gain-Bandwidth Product (Figure Emitter-to-Base Capacitance Collector-to-Base Capacitance Collector-to-Substrate Capacitance CEBO CCBO CClO 1MHz,VCE j1.5 25oC, Typical Values Intended Only Design Guidance (Continued) TYPICAL VALUES
SYMBOL
TEST CONDITIONS 1kHz,VCE
UNITS
15.6 10-4
j0.04 0.001 j0.03 Figure
0.58
Typical Performance Curves
COLLECTOR CUTOFF CURRENT (nA) COLLECTOR CUTOFF CURRENT (nA) 10-1 10-2 10-3 TEMPERATURE (oC) TEMPERATURE (oC)
10-1 10-2 10-3 10-4
FIGURE ICBO TEMPERATURE
FIGURE ICEO TEMPERATURE
5-29
CA3086 Typical Performance Curves
0.01 EMITTER CURRENT (mA) BASE-TO-EMITTER VOLTAGE 25oC
(Continued)
25oC
STATIC FORWARD CURRENT TRANSFER RATIO (hFE)
0.01
EMITTER CURRENT (mA)
FIGURE
FIGURE
NORMALIZED PARAMETERS
1kHz 25oC
BASE-TO-EMITTER VOLTAGE
TEMPERATURE (oC) 0.5mA
3.5k 1.88 10-4 15.6µS
0.01 COLLECTOR CURRENT (mA)
FIGURE TEMPERATURE
FIGURE NORMALIZED hFE, hIE, hRE,
FORWARD TRANSFER CONDUCTANCE (gFE) SUSCEPTANCE (bFE) (mS)
INPUT CONDUCTANCE (gIE) SUSCEPTANCE (bIE) (mS)
COMMON EMITTER CIRCUIT, BASE INPUT 25oC,
COMMON EMITTER CIRCUIT, BASE INPUT 25oC,
FREQUENCY (MHz)
FREQUENCY (MHz)
FIGURE FREQUENCY
FIGURE FREQUENCY
5-30
CA3086 Typical Performance Curves
(Continued)
OUTPUT CONDUCTANCE (gOE) SUSCEPTANCE (bOE) (mS)
COMMON EMITTER CIRCUIT, BASE INPUT 25oC,
REVERSE TRANSFER CONDUCTANCE (gRE) SUSCEPTANCE (bRE) (mS)
COMMON EMITTER CIRCUIT, BASE INPUT 25oC, SMALL FREQUENCIES LESS THAN 500MHz
FREQUENCY (MHz)
-0.5 -1.0
-1.5 -2.0 FREQUENCY (MHz)
FIGURE FREQUENCY
FIGURE FREQUENCY
GAIN BANDWIDTH PRODUCT (MHz) 1000 COLLECTOR CURRENT (mA) 25oC
FIGURE
Intersil semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
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5-31

General Purpose Transistor Array CA3086 consists five general-pur

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