RDS(on) Cool MOSPower Transistor Feature revolutionary high
|
|
|
Top Searches for this datasheet
SPD02N80C3
RDS(on)
Cool MOSPower Transistor
Feature revolutionary high voltage technology Ultra gate charge Periodic avalanche rated Extreme dv/dt rated
P-TO252-3-1
Type SPD02N80C3
Package P-TO252-3-1
Ordering Code Q67040-S4635
Marking 02N80C3
Maximum Ratings Parameter Continuous drain current Pulsed drain current, limited Tjmax Avalanche energy, single pulse Avalanche energy, repetitive limited Tjmax1) Avalanche current, repetitive limited Tjmax Gate source voltage Gate source voltage >1Hz) Power dissipation, 25°C Operating storage temperature Ptot -55. +150 0.05 puls Symbol Value Unit
Rev.
Page
2004-03-31 2003-10-14
Final data Maximum Ratings Parameter Drain Source voltage slope
SPD02N80C3
Symbol dv/dt
Value
Unit V/ns
Thermal Characteristics Parameter Thermal resistance, junction case version, device PCB: min. footprint cooling area Soldering temperature, (0.063 in.) from case Electrical Characteristics, Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS GS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS GS=0V, ID=2A breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th)
ID=120µ, VGS=VDS DS=800V, VGS=0V, Tj=25°C, Tj=150°C
Symbol min. RthJC RthJA Tsold
Values typ. max.
Unit
Values typ. max.
Unit
Gate-source leakage current
GS=20V, VDS=0V GS=10V, ID=1.2A, Tj=25°C Tj=150°C
Drain-source on-state resistance RDS(on)
Gate input resistance
f=1MHz, open Drain
Rev.
Page
2003-10-14 2004-03-31
Final data Electrical Characteristics unless otherwise specified Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance energy related Effective output capacitance, Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate source charge Gate drain charge Gate charge total Gate plateau voltage
DD=640V, ID=2A, GS=0 DD=640V, ID=2A
SPD02N80C3
Symbol Ciss Coss Crss
Conditions min.
DS2*I D*RDS(on)max, ID=1.2A GS=0V, DS=25V, f=1MHz
Values typ. 11.2 20.6 max.
Unit
Effective output capacitance, Co(er)
GS=0V, DS=0V 480V
td(on) td(off)
DD=400V, GS=0/10V, ID=2A, RG=47
V(plateau) DD=640V, ID=2A
1Repetitve avalanche causes additional power losses that calculated =EAR*f. 2Device 40mm*40mm*1.5mm epoxy with (one layer, thick) copper area drain connection. vertical without blown air. fixed capacitance that gives same stored energy Coss while rising from
o(er)
DSS.
o(tr) fixed capacitance that gives same charging time Coss while rising from VDSS.
Rev.
Page
2004-03-31 2003-10-14
Final data Electrical Characteristics, unless otherwise specified Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate fall reverse recovery current Typical Transient Thermal Characteristics Symbol Thermal resistance Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.067 0.126 0.215 0.655 0.569 0.161 Value typ. Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 Unit Symbol Value typ. rr/dt
=0V, F=IS =640V, IF=IS diF/dt=100A/µs
SPD02N80C3
Symbol
Conditions min.
TC=25°C
Values typ. max.
Unit
A/µs
Unit
0.00004221 0.0001651 0.0002432 0.0007613 0.002455 0.412
Ws/K
th,n
case
xternal eatsink
th,n
Rev.
Page
2003-10-14 2004-03-31
Final data Power dissipation Ptot (TC)
SPD02N80C3
SPD02N80C3
Safe operating area parameter C=25°C
Ptot
0.001 0.01
Safe operating area FullPAK (VDS) parameter: 25°C
Transient thermal impedance ZthJC parameter: tp/T
ZthJC
0.001 0.01
0.05 0.02 0.01 single pulse
Rev.
Page
2003-10-14 2004-03-31
Final data Transient thermal impedance FullPAK ZthJC parameter: tp/t
SPD02N80C3
Typ. output characteristic (VDS); Tj=25°C parameter:
ZthJC
6.5V
0.05 0.02 0.01 single pulse
5.5V
Typ. output characteristic (VDS); Tj=150°C parameter:
Typ. drain-source resistance RDS(on)=f(ID) parameter: Tj=150°C,
6.5V
RDS(on)
4.5V 5.5V
4.5V 5.5V
6.5V
Rev.
Page
2003-10-14 2004-03-31
Final data Drain-source on-state resistance RDS(on) (Tj) parameter
SPD02N80C3
SPD02N80C3
Typ. transfer characteristics RDS(on)max parameter:
25°C
RDS(on)
150°C
Typ. gate charge (QGate parameter: pulsed
SPD02N80C3
Forward characteristics body diode (VSD) parameter:
SPD02N80C3
(98%) (98%)
QGate
Page
Rev.
2003-10-14 2004-03-31
Final data Avalanche (tAR) par.:
SPD02N80C3
Avalanche energy (Tj) par.:
Tj(START)=125°C
Tj(START)=25°C
Drain-source breakdown voltage V(BR)DSS (Tj)
SPD02N80C3
Avalanche power losses parameter: AR=0.05mJ
V(BR)DSS
Rev.
Page
2003-10-14 2004-03-31
Final data Typ. capacitances (VDS) parameter: GS=0V,
SPD02N80C3
Typ. Coss stored energy Eoss=f(VDS)
Ciss
Eoss
Coss
Crss
Definition diodes switching characteristics
Rev.
Page
2003-10-14 2004-03-31
Final data P-TO-252-3-1 (D-PAK)
SPD02N80C3
Rev.
Page
2004-03-31 2003-10-14
Published Infineon Technologies Bereichs Kommunikation St.-Martin-Strasse D-81541 Infineon Technologies 1999 Rights Reserved.
SPD02N80C3
Attention please! information herein given describe certain components shall considered warranted characteristics. Terms delivery rights technical change reserved. hereby disclaim warranties, including limited warranties non-infringement, regarding circuits, descriptions charts stated herein. Infineon Technologies approved CECC manufacturer. Information further information technology, delivery terms conditions prices please contact your nearest Infineon Technologies Office Germany Infineon Technologies Reprensatives worldwide (see address list). Warnings technical requirements components contain dangerous substances. information types question please contact your nearest Infineon Technologies Office. Infineon Technologies Components only used life-support devices systems with express written approval Infineon Technologies, failure such components reasonably expected cause failure that life-support device system, affect safety effectiveness that device system Life support devices systems intended implanted human body, support and/or maintain sustain and/or protect human life. they fail, reasonable assume that health user other persons endangered.
asdfsdfsdfsdfa
Rev.
Page
2003-10-14 2004-03-31
Other recent searches
TS2950 - TS2950 TS2950 Datasheet
TS2951 - TS2951 TS2951 Datasheet
TMP93PW40 - TMP93PW40 TMP93PW40 Datasheet
PD-20795 - PD-20795 PD-20795 Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
