INSULATED GATE BIPOLAR TRANSISTOR IRGB30B60K IRGS30B60K IRGSL30B6

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INSULATED GATE BIPOLAR TRANSISTOR IRGB30B60K IRGS30B60K IRGSL30B6

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94799
INSULATED GATE BIPOLAR TRANSISTOR
IRGB30B60K IRGS30B60K IRGSL30B60K
VCES 600V 50A, TC=100°C TJ=175°
Features
(on) Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive (on) Temperature Coefficient. Maximum Junction Temperature rated 175°C.
10µs, TJ=150°
n-channel
VCE(on) typ. 1.95V
Benefits
Benchmark Efficiency Motor Control. Rugged Transient Performance. EMI. Excellent Current Sharing Parallel Operation.
TO-220AB IRGB30B60K
IRGS30B60K
TO-262 IRGSL30B60K
Absolute Maximum Ratings
Parameter
VCES 25°C 100°C VISOL 25°C TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref.Fig.C.T.5) Clamped Inductive Load current
Max.
2500 +175
Units
Isolation Voltage, Terminal Case, min. Gate-to-Emitter Voltage Maximum Power Dissipation Operating Junction Storage Temperature Range Soldering Temperature, sec. Mounting Torque, 6-32 Screw
100°C Maximum Power Dissipation
(0.063 (1.6mm) from case) (1.1
Thermal Mechanical Characteristics
Parameter
Junction-to-Case- IGBT Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
Typ.
0.50 1.44
Max.
0.41
Units
°C/W
Junction-to-Ambient (PCB Mount, Steady State)
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10/8/03
IRGB/S/SL30B60K
Electrical Characteristics 25°C (unless otherwise specified)
Parameter
V(BR)CES V(BR)CES/TJ VCE(on) VGE(th) VGE(th)/TJ ICES IGES
Min. Typ. Max. Units
0.40 1.95 2.40 1000 1830
Conditions
Ref.Fig.
Collector-to-Emitter Breakdown Voltage Temperature Coeff. Breakdown Voltage Collector-to-Emitter Voltage Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current
500µA V/°C (25°C-150°C) 30A, 15V, 25°C 2.35 2.75 30A, 15V, 150°C 30A, 15V, 175°C 2.95 VGE, 250µA mV/°C VGE, 1.0mA (25°C-150°C) 50V, 50A, 80µs 600V 2000 600V, 150°C 600V, 175°C 3000 ±100 ±20V,
5,6,7 8,9,10
8,9,10
Switching Characteristics 25°C (unless otherwise specified)
Parameter
Eoff Etot td(on) td(off) Eoff Etot td(on) td(off) Cies Coes Cres RBSOA SCSOA (Peak) Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Short Circuit Safe Operating Area Peak Short Circuit Collector Current
Min. Typ. Max. Units
1175 1575 1085 1150 1350 1785 2435 1750 2500 FULL SQUARE
Conditions
400V 30A, 400V 15V, 200µH 25°C 30A, 400V 15V, 200µH
Ref.Fig.
30A, 400V 15V, 200µH 150°C 30A, 400V 15V, 200µH 150°
12,14 WF1,WF2 13,15
Measured from package 1.0MHz 150°C, 120A, 600V VCC=500V,VGE +15V 0V,RG 150°C, 600V, VCC=360V,VGE +15V
Note page
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IRGB/S/SL30B60K
(°C)
Ptot
(°C)
Fig. Maximum Collector Current Case Temperature
Fig. Power Dissipation Case Temperature
1000
1000
1000 10000
1000
Fig. Forward 25°C; 150°
Fig. Reverse Bias 150°C; =15V
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IRGB/S/SL30B60K
8.0V
8.0V
Fig. Typ. IGBT Output Characteristics -40°C; 80µs
Fig. Typ. IGBT Output Characteristics 25°C; 80µs
8.0V
Fig. Typ. IGBT Output Characteristics 150°C; 80µs
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IRGB/S/SL30B60K
Fig. Typical -40°
Fig. Typical
25°C 150°
150°C 25°C
Fig. Typical 150°
Fig. Typ. Transfer Characteristics 50V; 10µs
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IRGB/S/SL30B60K
3000 2500 2000
Energy (µJ)
1000
EOFF 1500 1000
Swiching Time (ns)
tdOFF
Fig. Typ. Energy Loss 150°C; L=200µH; VCE= 400V, VGE=
Fig. Typ. Switching Time 150°C; L=200µH; VCE= 400V VGE=
3000
10000
2500
Swiching Time (ns)
2000
Energy (µJ)
EOFF
1000
tdOFF
1500
1000
tdON
Fig. Typ. Energy Loss 150°C; L=200µH; VCE= 400V ICE= 30A; VGE=
Fig. Typ. Switching Time 150°C; L=200µH; VCE= 400V ICE= 30A; VGE=
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IRGB/S/SL30B60K
10000
200V
Cies
Capacitance (pF)
1000
400V
Coes
Cres
Total Gate Charge (nC)
Fig. Typ. Capacitance VGE= 1MHz
Fig. Typical Gate Charge 30A; 600µH
Thermal Response thJC
0.50 0.20 0.10 0.05 0.02 0.01
0.01
(°C/W) (sec) 0.200 0.000428 0.209 0.013031
i/Ri i/Ri
0.001
SINGLE PULSE THERMAL RESPONSE
0.0001 1E-006 1E-005 0.0001 0.001 0.01
Notes: Duty Factor t1/t2 Peak Zthjc
Rectangular Pulse Duration (sec)
Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
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IRGB/S/SL30B60K
480V
Fig.C.T.1 Gate Charge Circuit (turn-off)
Fig.C.T.2 RBSOA Circuit
Driver
diode clamp
360V
DRIVER
Fig.C.T.3 S.C.SOA Circuit
Fig.C.T.4 Switching Loss Circuit
Fig.C.T.5 Resistive Load Circuit
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IRGB/S/SL30B60K
TEST CURRENT
test current test current
-100 15.90
Eoff Loss
Loss
-100 -0.20
0.00
0.20
0.40
0.60
0.80
16.00
16.10 Time (µs)
16.20
16.30
Time(µs)
Fig. WF1- Typ. Turn-off Loss Waveform 150°C using Fig. CT.4
Fig. WF2- Typ. Turn-on Loss Waveform 150°C using Fig. CT.4
-5.00
0.00
5.00 time (µS)
10.00
15.00
Fig. WF3- Typ. Waveform 150°C using Fig. CT.3
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IRGB/S/SL30B60K
TO-220AB Package Outline
Dimensions shown millimeters (inches)
2.87 (.113) 2.62 (.103)
10.54 (.415) 10.29 (.405)
3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240)
-B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048)
15.24 (.600) 14.84 (.584)
LEAD ASSIGNMENTS HEXFET IGBTs, CoPACK
1.15 (.045)
LEAD GATE GATE ASSIGNMENTS DRAIN GATE COLLECTOR SOURCEDRAIN EMITTER COLLECTOR DRAIN SOURCE DRAIN
14.09 (.555) 13.47 (.530)
4.06 (.160) 3.55 (.140)
1.40 (.055) 1.15 (.045) 2.54 (.100) NOTES:
0.93 (.037) 0.69 (.027)
0.55 (.022) 0.46 (.018)
0.36 (.014)
2.92 (.115) 2.64 (.104)
DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION INCH
OUTLINE CONFORMS JEDEC OUTLINE TO-220AB. HEATSINK LEAD MEASUREMENTS INCLUDE BURRS.
TO-220AB Part Marking Information
EXAMPLE: IRF1010 CODE 1789 EMBLED 1997 EMBLY LINE INTERNAT IONAL RECT IFIER LOGO EMBLY CODE PART NUMBER
DATE CODE YEAR 1997 WEEK LINE
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IRGB/S/SL30B60K
D2Pak Package Outline
Dimensions shown millimeters (inches)
D2Pak Part Marking Information
THIS IRF530S WITH CODE 8024 EMBLED 2000 SEMBLY LINE INTERNATIONAL RECTIFIER LOGO EMBLY CODE PART NUMBER F530S CODE YEAR 2000 WEEK LINE
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IRGB/S/SL30B60K
TO-262 Package Outline
Dimensions shown millimeters (inches)
IGBT GATE COLLECTOR EMITTER COLLECTOR
TO-262 Part Marking Information
EXAMPLE: IRL3103L CODE 1789 EMBLED 1997 EMBLY LINE ERNATIONAL RECTIFIER LOGO SEMBLY CODE PART NUMBER
DATE CODE YEAR 1997 WEEK LINE
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IRGB/S/SL30B60K
D2Pak Tape Reel Information
Dimensions shown millimeters (inches)
1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)
1.60 (.063) 1.50 (.059)
0.368 (.0145) 0.342 (.0135)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
11.60 (.457) 11.40 (.449)
15.42 (.609) 15.22 (.601)
24.30 (.957) 23.90 (.941)
10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178)
FEED DIRECTION
13.50 (.532) 12.80 (.504)
27.40 (1.079) 23.90 (.941)
330.00 (14.173) MAX.
60.00 (2.362) MIN.
NOTES COMFORMS EIA-418. CONTROLLING DIMENSION: MILLIMETER. DIMENSION MEASURED HUB. INCLUDES FLANGE DISTORTION OUTER EDGE.
26.40 (1.039) 24.40 (.961)
30.40 (1.197) MAX.
Notes: (VCES), 15V, 28µH, This only applied TO-220AB package. This applied D2Pak, when mounted square FR-4 G-10 Material
recommended footprint soldering techniques refer application note #AN-994.
Energy losses include "tail" diode reverse recovery. Calculated continuous current based maximum allowable junction temperature. Package limitation current 75A. TO-220AB package recommended Surface Mount Application.
Data specifications subject change without notice.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. 10/03
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INSULATED GATE BIPOLAR TRANSISTOR IRGB30B60K IRGS30B60K IRGSL30B6

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