INSULATED GATE BIPOLAR TRANSISTOR (on) Punch Through IGBT Technol

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INSULATED GATE BIPOLAR TRANSISTOR (on) Punch Through IGBT Technol

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95643
INSULATED GATE BIPOLAR TRANSISTOR
(on) Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive (on) Temperature Coefficient. Maximum Junction Temperature rated 175°C. TO-220 available Lead-Free.
IRGB4B60KPbF IRGS4B60K IRGSL4B60K
VCES 600V 6.8A, TC=100°C
10µs, TJ=150°C
Benefits
Benchmark Efficiency Motor Control. Rugged Transient Performance. EMI. Excellent Current Sharing Parallel Operation.
n-channel
VCE(on) typ. 2.1V
D2Pak TO-220 IRGB4B60KPbF IRGS4B60K
TO-262 IRGSL4B60K
Absolute Maximum Ratings
Parameter
VCES 25°C 100°C 25°C Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref.Fig.C.T.5) Clamped Inductive Load current
Max.
Units
+175 (0.063 (1.6mm) from case)
Gate-to-Emitter Voltage Maximum Power Dissipation
100°C Maximum Power Dissipation Operating Junction TSTG Storage Temperature Range Soldering Temperature, sec.
Thermal Mechanical Characteristics
Parameter
Junction-to-Case- IGBT Case-to-Sink, flat, greased surface Junction-to-Ambient Weight Junction-to-Ambient (PCB Mount, steady state)
Min.
Typ.
0.50 1.44
Max.
Units
°C/W
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7/26/04
IRGB4B60KPbF IRGS/SL4B60K
Electrical Characteristics 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
0.28 -8.1 ±100
Conditions
500µA
Ref.Fig.
V(BR)CES Collector-to-Emitter Breakdown Voltage V(BR)CES/TJ Temperature Coeff. Breakdown Voltage VCE(on) VGE(th) VGE(th)/TJ ICES IGES Collector-to-Emitter Voltage Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current
V/°C (25°C-150°C) 4.0A, 15V, 25°C 4.0A, 15V, 150°C 4.0A, 15V, 175°C VGE, 250µA
5,6,7 9,10,11
9,10,11
mV/°C VGE, (25°C-150°C) 50V, 4.0A, 80µs 600V 600V, 150°C 600V, 175°C ±20V
Switching Characteristics 25°C (unless otherwise specified)
Parameter
Eoff Etot td(on) td(off) Eoff Etot td(on) td(off) Cies Coes Cres RBSOA SCSOA Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Short Circuit Safe Operating Area
Min. Typ. Max. Units
4.0A 400V
Conditions
Ref.Fig.
4.0A, 400V 15V, 100, 2.5mH 25°C
4.0A, 400V 15V, 100, 2.5mH 25°C 4.0A, 400V 15V, 100, 2.5mH 150°C
13,15 WF1,WF2 14,16
4.0A, 400V 15V, 100, 2.5mH 150°C
FULL SQUARE
1.0MHz 150°C, 24A, 600V VCC=500V,VGE +15V 0V,RG 150°C, 600V, VCC=360V,VGE +15V
Note page
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IRGB4B60KPbF IRGS/SL4B60K
Ptot
(°C)
(°C)
Fig. Maximum Collector Current Case Temperature
Fig. Power Dissipation Case Temperature
100µs
10ms
0.01 1000 10000
1000
Fig. Forward 25°C; 150°C
Fig. Reverse Bias 150°C; =15V
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IRGB4B60KPbF IRGS/SL4B60K
8.0V
8.0V
Fig. Typ. IGBT Output Characteristics -40°C; 80µs
Fig. Typ. IGBT Output Characteristics 25°C; 80µs
8.0V
Fig. Typ. IGBT Output Characteristics 150°C; 80µs
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IRGB4B60KPbF IRGS/SL4B60K
2.0A 4.0A 8.0A 2.0A 4.0A 8.0A
Fig. Typical -40°C
Fig. Typical 25°C
Drain-to-Source Current
25°C
2.0A 4.0A 8.0A
150°C
Gate-to-Source Voltage
Fig. Typical 150°C
Fig. Typ. Transfer Characteristics 360V; 10µs
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IRGB4B60KPbF IRGS/SL4B60K
Swiching Time (ns)
1000
Energy (µJ)
tdON
EOFF
Fig. Typ. Energy Loss 150°C; L=2.5mH; VCE= 400V, 100; VGE=
Fig. Typ. Switching Time 150°C; L=2.5mH; VCE= 400V 100; VGE=
1000
Swiching Time (ns)
Energy (µJ)
tdOFF
EOFF
tdON
Fig. Typ. Energy Loss 150°C; L=2.5mH; VCE= 400V ICE= 4.0A; VGE=
Fig. Typ. Switching Time 150°C; L=2.5mH; VCE= 400V ICE= 4.0A; VGE=
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IRGB4B60KPbF IRGS/SL4B60K
1000
Cies
300V 400V
Capacitance (pF)
Coes
Cres
Total Gate Charge (nC)
Fig. Typ. Capacitance VGE= 1MHz
Fig. Typical Gate Charge 4.0A; 3150µH
Thermal Response thJC
0.50 0.20 0.10
0.05 0.02 0.01 SINGLE PULSE THERMAL RESPONSE
(°C/W) (sec) 0.0429 0.000001 1.3417 1.0154 0.000178 0.000627
i/Ri i/Ri
0.01
Notes: Duty Factor t1/t2 Peak Zthjc
0.001 1E-006 1E-005 0.0001 0.001 0.01
Rectangular Pulse Duration (sec)
Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
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IRGB4B60KPbF IRGS/SL4B60K
480V
Fig.C.T.1 Gate Charge Circuit (turn-off)
Fig.C.T.2 RBSOA Circuit
diode clamp
Driver
360V
DRIVER
Fig.C.T.3 S.C.SOA Circuit
Fig.C.T.4 Switching Loss Circuit
Fig.C.T.5 Resistive Load Circuit
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IRGB4B60KPbF IRGS/SL4B60K
Eoff Loss Time (uS)
-100 0.35 Loss 0.45 0.55 Time (uS) 0.65
-100
Fig. WF1- Typ. Turn-off Loss Waveform 150°C using Fig. CT.4
Fig. WF2- Typ. Turn-on Loss Waveform 150°C using Fig. CT.4
Time (uS)
Fig. WF3- Typ. Waveform 150°C using Fig. CT.3
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IRGB4B60KPbF IRGS/SL4B60K
TO-220AB Package Outline
Dimensions shown millimeters (inches)
2.87 (.113) 2.62 (.103)
10.54 (.415) 10.29 (.405)
3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240)
-B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048)
15.24 (.600) 14.84 (.584)
1.15 (.045)
LEAD ASSIGNMENTS HEXFET GATE 11234LEAD ASSIGNMENTS
IGBTs, CoPACK
14.09 (.555) 13.47 (.530)
2GATE DRAIN 3DRAINSOURCE SOURCE DRAIN DRAIN
GATE COLLECTOR EMITTER COLLECTOR
4.06 (.160) 3.55 (.140)
1.40 (.055) 1.15 (.045)
0.93 (.037) 0.69 (.027)
0.55 (.022) 0.46 (.018)
0.36 (.014)
2.54 (.100) NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION INCH
2.92 (.115) 2.64 (.104)
OUTLINE CONFORMS JEDEC OUTLINE TO-220AB. HEATSINK LEAD MEASUREMENTS INCLUDE BURRS.
TO-220AB Part Marking Information
XAMPL 1010 CODE 1789 1997 IONAL CODE
Note: assembly line position indicates "Lead-Free"
CODE 1997
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D2Pak Package Outline
Dimensions shown millimeters (inches)
IRGB4B60KPbF IRGS/SL4B60K
D2Pak Part Marking Information
530S CODE 8024 2000 LINE Note: embly line ition indicates "Lead-F ree" RNAT IONAL LOGO CODE PART NUMB 530S CODE 2000 LINE
RNAT IONAL IFIER LOGO CODE PART 530S CODE IGNATE AD-F PRODUCT (OPT IONAL YEAR 2000 CODE
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IRGB4B60KPbF IRGS/SL4B60K
TO-262 Package Outline
Dimensions shown millimeters (inches)
TO-262 Part Marking Information
XAMPLE 3103L CODE 1789 1997 LINE Note: embly line ition indicates "Lead-F ree" IONAL LOGO CODE
CODE 1997 LINE
IONAL LOGO CODE CODE IGNAT AD-F (OPT IONAL) 1997 CODE
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D2Pak Tape Reel Information
Dimensions shown millimeters (inches)
1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)
1.60 (.063) 1.50 (.059)
IRGB4B60KPbF IRGS/SL4B60K
0.368 (.0145) 0.342 (.0135)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601)
24.30 (.957) 23.90 (.941)
10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178)
FEED DIRECTION
13.50 (.532) 12.80 (.504)
27.40 (1.079) 23.90 (.941)
330.00 (14.173) MAX.
60.00 (2.362) MIN.
NOTES COMFORMS EIA-418. CONTROLLING DIMENSION: MILLIMETER. DIMENSION MEASURED HUB. INCLUDES FLANGE DISTORTION OUTER EDGE.
26.40 (1.039) 24.40 (.961)
30.40 (1.197) MAX.
Notes: (VCES), 20V, 100µH, When mounted square FR-4 G-10 Material recommended footprint soldering techniques
refer application note #AN-994.
Energy losses include "tail" diode reverse recovery, using Diode FD059H06A5.
TO-220AB package recommended Surface Mount Application. Data specifications subject change without notice. This product been designed qualified Industrial market. Qualification Standards found IR's site.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. 07/04
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INSULATED GATE BIPOLAR TRANSISTOR (on) Punch Through IGBT Technol

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