AUTOMOTIVE MOSFET IRLR3915PbF IRLU3915PbF HEXFET® Power MOSF

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AUTOMOTIVE MOSFET IRLR3915PbF IRLU3915PbF HEXFET® Power MOSF

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95090A
AUTOMOTIVE MOSFET
IRLR3915PbF IRLU3915PbF
HEXFET® Power MOSFET
Features
Advanced Process Technology Ultra On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed Tjmax Lead-Free
VDSS RDS(on)
Description
Specifically designed Automotive applications, this HEXFET® Power MOSFET utilizes latest processing techniques achieve extremely on-resistance silicon area. Additional features this product 175°C junction operating temperature, fast switching speed improved repetitive avalanche rating. These features combine make this design extremely efficient reliable device Automotive applications wide variety other applications.
I-Pak D-Pak IRLR3915PbF IRLU3915PbF Max.
0.77 Fig.12a, 12b, (1.6mm from case
Absolute Maximum Ratings
Parameter
25°C 100°C 25°C 25°C sigma) TSTG Continuous Drain Current, (Silicon limited) Continuous Drain Current, (See Fig.9) Continuous Drain Current, (Package limited) Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy Operating Junction Storage Temperature Range Soldering Temperature, seconds
Units
W/°C
Thermal Resistance
Parameter
Junction-to-Case Junction-to-Ambient (PCB mount) Junction-to-Ambient---
Typ.
Max.
Units
°C/W
HEXFET(R) registered trademark International Rectifier.
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12/7/04
IRLR/U3915PbF
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss Coss Coss Coss eff.
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Min.
Typ. 0.057 1870 2380
Max. Units Conditions 250µA V/°C Reference 25°C, 10V, 5.0V, 10V, 250µA 25V, 55V, 55V, 125°C -200 -16V Between lead, (0.25in.) from package center contact 1.0MHz, Fig. 1.0V, 1.0MHz 44V, 1.0MHz
Source-Drain Ratings Characteristics
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions MOSFET symbol showing integral reverse junction diode. 25°C, 30A, 25°C, 30A, 25xjkl di/dt 100A/µs Intrinsic turn-on time negligible (turn-on dominated LS+LD)
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IRLR/U3915PbF
10000 1000 0.01 0.001 1000
BOTTOM 5.0V 3.0V 2.7V 2.5V 2.25V 2.0V
1000
5.0V 3.0V 2.7V 2.5V 2.25V 2.0V
Drain-to-Source Current
Drain-to-Source Current
BOTTOM
2.0V
2.0V
20µs PULSE WIDTH 25°C
20µs PULSE WIDTH 175°C
1000
VDS, Drain-to-Source Voltage
VDS, Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
1000.00
25°C
100.00
175°C
Forward Transconductance
Drain-to-Source Current
175°C 25°C
10.00
1.00
0.10
20µs PULSE WIDTH
11.0 13.0 15.0
VGS, Gate-to-Source Voltage
ID,Drain-to-Source Current
Typical Transfer Characteristics
Typical Forward Transconductance Drain Current
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IRLR/U3915PbF
100000 Ciss Cgd, SHORTED Crss Coss
Gate-to-Source Voltage
10000
Capacitance(pF)
Ciss
1000
Coss
Crss
VDS, Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000
1000
OPERATION THIS AREA LIMITED (on)
Drain-to-Source Current
Reverse Drain Current
100µsec 25°C 175°C Single Pulse
1msec
10msec 1000
,Source-to-Drain Voltage
VDS, Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRLR/U3915PbF
LIMITED PACKAGE
RDS(on) Drain-to-Source Resistance
Drain Current
(Normalized)
Case Temperature
Junction Temperature
Maximum Drain Current Case Temperature
Normalized On-Resistance Temperature
thJC
0.50
Thermal Response
0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak 0.01 0.00001 0.0001 0.001 0.01
thJC
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRLR/U3915PbF
DRIVER
BOTTOM
D.U.T
Single Pulse Avalanche Energy (mJ)
0.01
12a. Unclamped Inductive Test Circuit
V(BR)DSS
Starting Junction Temperature
12b. Unclamped Inductive Waveforms
12c. Maximum Avalanche Energy Drain Current
VGS(th) Gate threshold Voltage
Charge
13a. Basic Gate Charge Waveform
Current Regulator Same Type D.U.T.
250µA
.2µF .3µF
D.U.T.
Temperature
Current Sampling Resistors
13b. Gate Charge Test Circuit
Threshold Voltage Temperature
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IRLR/U3915PbF
1000
Duty Cycle Single Pulse
Avalanche Current
0.01
Allowed avalanche Current avalanche pulsewidth, assuming 25°C avalanche losses
0.05 0.10
1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
(sec)
Typical Avalanche Current vs.Pulsewidth
Avalanche Energy (mJ)
Single Pulse BOTTOM Duty Cycle
Starting Junction Temperature (°C)
Notes Repetitive Avalanche Curves Figures (For further info, AN-1005 www.irf.com) Avalanche failures assumption: Purely thermal phenomenon failure occurs temperature excess jmax. This validated every part type. Safe operation Avalanche allowed long jmax exceeded. Equation below based circuit waveforms shown Figures 12a, 12b. (ave) Average power dissipation single avalanche pulse. Rated breakdown voltage (1.3 factor accounts voltage increase during avalanche). Allowable avalanche current. Allowable rise junction temperature, exceed Tjmax (assumed 25°C Figure 16). Average time avalanche. Duty cycle avalanche ZthJC(D, Transient thermal resistance, figure (ave) ZthJC 2DT/ (AR)
Maximum Avalanche Energy Temperature
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IRLR/U3915PbF
Driver Gate Drive
D.U.T
P.W.
Period
P.W. Period VGS=10V
Circuit Layout Considerations Stray Inductance Ground Plane Leakage Inductance Current Transformer
D.U.T. Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt
dv/dt controlled Driver same type D.U.T. controlled Duty Factor D.U.T. Device Under Test
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple
Logic Level Devices Peak Diode Recovery dv/dt Test Circuit N-Channel HEXFET® Power MOSFETs
Pulse Width Duty Factor
D.U.T.
18a. Switching Time Test Circuit
td(on) d(off)
18b. Switching Time Waveforms
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IRLR/U3915PbF
D-Pak (TO-252AA) Package Outline
Dimensions shown millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: IRFR120 WITH EMBLY CODE 1234 EMBLED 1999 EMBLY LINE Note: sembly line ition indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO EMBLY CODE PART NUMBER
IRFU120 916A
CODE YEAR 1999 WEEK LINE
ERNAT IONAL RECT IFIER LOGO EMBLY CODE PART NUMBER
IRFU120
DATE CODE IGNAT LEAD-FREE PRODUCT (OPT IONAL) YEAR 1999 WEEK EMBLY CODE
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IRLR/U3915PbF
I-Pak (TO-251AA) Package Outline
Dimensions shown millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
EXAMPLE: IRFU120 EMBLY CODE 5678 EMBLED 1999 EMBLY LINE Note: assembly line position indicates "Lead-Free" ERNAT IONAL RECT IFIER LOGO EMBLY CODE PART NUMBER
U120 919A
CODE YEAR 1999 WEEK LINE
ERNAT IONAL RECT IFIER LOGO EMBLY CODE PART NUMBER
IRFU120
CODE IGNAT LEAD-FREE PRODUCT (OPT IONAL) YEAR 1999 WEEK EMBLY CODE
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IRLR/U3915PbF
D-Pak (TO-252AA) Tape Reel Information
Dimensions shown millimeters (inches)
16.3 .641 15.7 .619
16.3 .641 15.7 .619
12.1 .476 11.9 .469
FEED DIRECTION
.318 .312
FEED DIRECTION
NOTES CONTROLLING DIMENSION MILLIMETER. DIMENSIONS SHOWN MILLIMETERS INCHES OUTLINE CONFORMS EIA-481 EIA-541.
INCH
NOTES OUTLINE CONFORMS EIA-481.
Repetitive rating; pulse width limited
Notes:
max. junction temperature. (See fig. 11). Limited TJmax, starting 25°C, 0.45mH, 30A, =10V. Part recommended above this value. 30A, di/dt 280A/µs, V(BR)DSS, 175°C. Pulse width 1.0ms; duty cycle
Coss eff. fixed capacitance that gives same charging time
Coss while rising from VDSS
Limited TJmax Fig.12a, 12b, typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested this value production.
When mounted square FR-4 G-10 Material
recommended footprint soldering techniques refer application note #AN-994.
Data specifications subject change without notice. This product been designed qualified Automotive [Q101] market. Qualification Standards found IR's site.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. 12/04
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AUTOMOTIVE MOSFET IRLR3915PbF IRLU3915PbF HEXFET® Power MOSF

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