AO4701 uses advanced trench technology provide excellent RDS(ON) gate
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AO4701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
AO4701 uses advanced trench technology provide excellent RDS(ON) gate charge. Schottky diode provided facilitate implementation bidirectional blocking switch.
Features
-30V RDS(ON) (VGS 10V) RDS(ON) (VGS 4.5V) RDS(ON) 120m (VGS 2.5V) SCHOTTKY 30V, VF=0.5V@1A
SOIC-8
Absolute Maximum Ratings =25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage TA=25°C Continuous Drain CurrentA Pulsed Drain Current
MOSFET -4.2
Schottky
Units
TA=70°C TA=25°C
Schottky reverse voltage Continuous Forward Current Pulsed Forward Current Power Dissipation Junction Storage Temperature Range Parameter: Thermal Characteristics MOSFET Maximum Junction-to-AmbientA Maximum Junction-to-Ambient
TA=70°C TA=25°C TA=70°C
TSTG Symbol 1.44
1.44 62.5 62.5
Units °C/W
Steady-State Steady-State Steady-State Steady-State
Maximum Junction-to-Lead Thermal Characteristics Schottky Maximum Junction-to-Ambient Maximum Junction-to-Lead
Maximum Junction-to-Ambient
°C/W
Alpha Omega Semiconductor, Ltd.
AO4701
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current Conditions ID=-250µA, VGS=0V VDS=-24V, VGS=0V TJ=55°C VDS=0V, VGS=±12V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V VGS=-10V, ID=-5A Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-4A VGS=-2.5V, ID=-1A VDS=-5V, ID=-5A -0.75 -0.7 42.5 ±100 -1.3 Units 0.05
Forward Transconductance Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
0.45 0.007
SWITCHING PARAMETERS Total Gate Charge Gate Source Charge Gate Drain Charge tD(on) tD(off) Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
VGS=-4.5V, VDS=-15V, ID=-4A
VGS=-10V, VDS=-15V, RL=3.6, RGEN=6
IF=-5A, dI/dt=100A/µs Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs SCHOTTKY PARAMETERS Forward Voltage Drop IF=1.0A VR=30V VR=30V, TJ=125°C Maximum reverse leakage current VR=30V, TJ=150°C Junction Capacitance VR=15V
value measured with device mounted 1in2 FR-4 board with 2oz. Copper, still environment with =25°C. value given application depends user's specific board design. current rating based thermal resistance rating. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures 6,12,14 obtained using pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with TA=25°C.
Alpha Omega Semiconductor, Ltd.
AO4701 TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
-10V -VDS (Volts) On-Region Characteristics Normalized On-Resistance RDS(ON) VGS=-10V Temperature (°C) Figure On-Resistance Junction Temperature Figure On-Resistance Drain Current Gate Voltage -2.5V -4.5V -ID(A) 125°C VDS=-5V
VGS=-2V
25°C
-VGS(Volts) Figure Transfer Characteristics
ID=-5A VGS=-4.5V VGS=-10V
VGS=-2.5V
VGS=-4.5V
VGS=-2.5V ID=-2A
RDS(ON) 25°C 125°C ID=-2A
1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 -VSD (Volts) Figure Body-Diode Characteristics 25°C
125°C
-VGS (Volts) Figure On-Resistance Gate-Source Voltage
Alpha Omega Semiconductor, Ltd.
AO4701
perature
stics
Alpha Omega Semiconductor, Ltd.
AO4701 TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
-VGS (Volts) (nC) Figure Gate-Charge Characteristics -VDS (Volts) Figure Capacitance Characteristics VDS=-15V ID=-5A Capacitance (pF) 1400 1200 1000 Coss Crss Ciss
100.0
TJ(Max)=150°C TA=25°C RDS(ON) limited 0.1s
10µs 100µs 10ms Power TJ(Max)=150°C TA=25°C
(Amps)
10.0
-VDS (Volts) Figure Maximum Forward Biased Safe Operating Area (Note
0.001
0.01
1000
Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
0.01 0.00001
0.0001
0.001
0.01
1000
Pulse Width Figure Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.
AO4701 TYPICAL ELECTRICAL THERMAL CHARACTERISTICS: SCHOTTKY
125°C Capacitance (pF) 1MHz (Amps) (Volts) Figure Schottky Forward Characteristics (Volts) Figure Schottky Capacitance Characteristics
0.01 25°C 0.001
(Volts) Temperature (°C) IF=3A
VR=30V 0.01 0.001 Temperature (°C) Figure Schottky Leakage current Junction Temperature
IF=1A
Figure Schottky Forward Drop Junction Temperature Normalized Transient Thermal Resistance D=Ton/(Ton+Toff TJ,PK=TA+PDM.ZJA.RJA RJA=62.5°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Leakage Current (mA)
Single Pulse
Toff
0.01 0.00001
0.0001
0.001
0.01
1000
Pulse Width Figure Schottky Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.
ALPHA OMEGA
SEMICONDUCTOR, INC.
SO-8 Package Data
DIMENSIONS MILLIMETERS SYMBOLS
DIMENSIONS INCHES
1.45 0.00 0.33 0.19 4.80 3.80 5.80 0.25 0.40
1.50 1.45 1.27
1.55 0.10 0.51 0.25 5.00 4.00 6.20 0.50 1.27 0.10
0.057 0.000 0.013 0.007 0.189 0.150 0.228 0.010 0.016
0.059 0.057 0.050
0.061 0.004 0.020 0.010 0.197 0.157 0.244 0.020 0.050 0.004
NOTE: LEAD FINISH: MICROINCHES MIN. THICKNESS Tin/Lead (SOLDER) PLATED LEAD TOLERANCE 0.10 mil) UNLESS OTHERWISE SPECIFIED COPLANARITY 0.10 DIMENSION MEASURED GAGE PLANE
PACKAGE MARKING DESCRIPTION
RECOMMENDED LAND PATTERN
NOTE: LOGO LOGO 4701 PART NUMBER CODE. LOCATION ASSEMBLY LOCATION YEAR CODE WEEK CODE. ASSEMBLY CODE
SO-8 PART CODE
UNIT:
PART AO4701
CODE 4701
Rev.
ALPHA OMEGA
SEMICONDUCTOR, INC.
SO-8 Carrier Tape
SO-8 Tape Reel Data
SO-8 Reel
SO-8 Tape
Leader Trailer Orientation
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