HSM2836C Silicon Epitaxial Planar Diode High Speed Switching Rev.
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ADE-208-030B(Z)
HSM2836C Silicon Epitaxial Planar Diode High Speed Switching
Rev. Aug. 1995 Features
Fast recovery time. MPAK package suitable high density surface mounting high speed assembly.
Arrangement
Ordering Information
Type HSM2836C Laser Mark Package Code MPAK
(Top View)
Cathode Cathode Anode
Absolute Maximum Ratings 25°C)
Item Peak reverse voltage Reverse voltage Peak forward current
Non-Repetitive peak forward surge current
Symbol IFSM Tstg
Value +125
Unit
Average forward current Junction temperature Storage temperature Within forward surge current. device
Electrical Characteristics 25°C)
Item Forward voltage Reverse current Capacitance Reverse recovery time device Symbol 0.72 0.83 0.90 Unit Test Condition 10mA, VR=6V, RL=50
HSM2836C
Reverse current
Forward current
Ta=75°C
Ta=50°C
Ta=25°C
Ta=-25°C
Forward voltage Fig.1 Forward current Forward voltage
Reverse voltage Fig.2 Reverse current Reverse voltage
f=1MHz
Capacitance (pF)
Reverse voltage Fig.3 Capacitance Reverse voltage
HSM2836C
Package Dimensions
0.65
Unit:
Laser Mark
0.05
0.10
0.16 0.06
0.10
0.65
0.95
0.95
0.10
Cathode Cathode Anode HITACHI Code MPAK(1)
JEDEC Code EIAJ Code Weight
SC-59A 0.011
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