HSM123 Silicon Epitaxial Planar Diode High Speed Switching Rev. A

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HSM123 Silicon Epitaxial Planar Diode High Speed Switching Rev. A

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ADE-208-027C(Z)
HSM123 Silicon Epitaxial Planar Diode High Speed Switching
Rev. Aug. 1995 Features
capacitance, proof against high voltage. Fast recovery time. MPAK package suitable high density surface mounting high speed assembly.
Arrangement
Ordering Information
Type HSM123 Laser Mark Package Code MPAK
(Top View)
Cathode Anode Cathode Anode
Absolute Maximum Ratings 25°C)
Item Peak reverse voltage Reverse voltage Peak forward current
Non-Repetitive peak forward surge current
Symbol IFSM Tstg
Value +125
Unit
Average forward current Junction temperature Storage temperature Within forward surge current. device
Electrical Characteristics 25°C)
Item Forward voltage Reverse current Capacitance
Reverse recovery time
Symbol
0.70 0.79 0.85
Unit
Test Condition 10mA, VR=6V, RL=50
device
HSM123
Forward current
Reverse current
Forward voltage Fig.1 Forward current Forward voltage
Reverse voltage Fig.2 Reverse current Reverse voltage
f=1MHz
Capacitance (pF)
Reverse voltage Fig.3 Capacitance Reverse voltage
HSM123
Package Dimensions
0.65
Unit:
Laser Mark
0.05
0.10
0.16 0.06
0.10
0.65
0.95
0.95
0.10
Cathode Anode Cathode Anode HITACHI Code MPAK(1)
JEDEC Code EIAJ Code Weight
SC-59A 0.011

HSM123 Silicon Epitaxial Planar Diode High Speed Switching Rev. A

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