AO4406 uses advanced trench technology provide excellent RDS(ON), gate
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AO4406 N-Channel Enhancement Mode Field Effect Transistor
AO4406 uses advanced trench technology provide excellent RDS(ON), gate charge operation with gate voltages 2.5V. This device makes excellent high side switch notebook core DC-DC conversion.
Features
11.5A RDS(ON) (VGS 10V) RDS(ON) 16.5m (VGS 4.5V) RDS(ON) (VGS 2.5V)
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
Maximum 11.5
Units
TA=25°C TA=70°C
Avalanche Current Repetitive Avalanche Energy Power Dissipation L=0.1mH TA=25°C TA=70°C Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
TSTG
Symbol Steady-State Steady-State
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
AO4406
Electrical Characteristics J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±12V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V, ID=12A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=10A VGS=2.5V, ID=8A Forward Transconductance VDS=5V, ID=10A IS=10A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current 11.5 13.5 19.5 0.83 1630 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=15V, ID=11.5A VGS=10V, VDS=15V, RL=1.2, RGEN=3 IF=10A, dI/dt=100A/µs 18,7 19.8 19.2 16.5 Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Total Gate Charge Gate Source Charge tD(on) tD(off) Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/µs
value measured with device mounted 1in2 FR-4 board with 2oz. Copper, still environment with TA=25°C. value given application depends user's specific board design. current rating based thermal resistance rating. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures obtained using pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with TA=25°C. curve provides single pulse rating.
Alpha Omega Semiconductor, Ltd.
AO4406 TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
ID(A) VGS=1.5V (Volts) On-Region Characteristics Normalized On-Resistance VGS=2.5V RDS(ON) Figure On-Resistance Drain Current Gate Voltage ID=10A 1.0E-01 RDS(ON) 125°C 25°C 1.0E-02 1.0E-03 1.0E-04 1.0E-05 2.00 (Volts) Figure Body-Diode Characteristics 25°C 1.0E+01 VGS=0V 1.0E+00 125°C VGS=4.5V ID=10A VGS=4.5V Temperature (°C) Figure On-Resistance Junction Temperature VGS=2.5V VGS=10V 4.5V 2.5V VGS(Volts) Figure Transfer Characteristics 125°C 25°C VDS=5V
VGS=10V
0.00
4.00 6.00 8.00 10.00 (Volts) Figure On-Resistance Gate-Source Voltage
Alpha Omega Semiconductor, Ltd.
AO4406 TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
(Volts) (nC) Figure Gate-Charge Characteristics VDS=15V ID=11.5A Capacitance (pF) 2500 2250 2000 1750 1500 1250 1000 (Volts) Figure Capacitance Characteristics Coss Crss Ciss
100.0 RDS(ON) limited 10.0 (Amps) 100µs Power 10ms 0.1s TJ(Max)=150°C TA=25°C (Volts) Figure Maximum Forward Biased Safe Operating Area (Note
0.001 0.01 1000 TJ(Max)=150°C TA=25°C
Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse 0.01 0.00001
1000
0.0001
0.001
0.01
Pulse Width Figure Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.
AO4406 TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
ID(A), Peak Avalanche Current 0.00001 TA=25°C
Power Dissipation
SteadyState
0.0001 Time avalanche, Figure Avalanche capability
0.001
TCASE (°C) Figure Power De-rating (Note
Alpha Omega Semiconductor, Ltd.
ALPHA OMEGA
SEMICONDUCTOR, INC.
SO-8 Package Data
DIMENSIONS MILLIMETERS SYMBOLS
DIMENSIONS INCHES
1.45 0.00 0.33 0.19 4.80 3.80 5.80 0.25 0.40
1.50 1.45 1.27
1.55 0.10 0.51 0.25 5.00 4.00 6.20 0.50 1.27 0.10
0.057 0.000 0.013 0.007 0.189 0.150 0.228 0.010 0.016
0.059 0.057 0.050
0.061 0.004 0.020 0.010 0.197 0.157 0.244 0.020 0.050 0.004
NOTE: LEAD FINISH: MICROINCHES MIN. THICKNESS Tin/Lead (SOLDER) PLATED LEAD TOLERANCE 0.10 mil) UNLESS OTHERWISE SPECIFIED COPLANARITY 0.10 DIMENSION MEASURED GAGE PLANE
PACKAGE MARKING DESCRIPTION
RECOMMENDED LAND PATTERN
NOTE: LOGO LOGO 4406 PART NUMBER CODE. LOCATION ASSEMBLY LOCATION YEAR CODE WEEK CODE. ASSEMBLY CODE
SO-8 PART CODE
UNIT:
PART AO4406
CODE 4406
Rev.
ALPHA OMEGA
SEMICONDUCTOR, INC.
SO-8 Carrier Tape
SO-8 Tape Reel Data
SO-8 Reel
SO-8 Tape
Leader Trailer Orientation
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