AK2570 Feed Forward Module DESCRIPTION AK2570 monolithi
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[AK2570]
AK2570
Feed Forward Module
DESCRIPTION
AK2570 monolithic CMOS function `Feed Forward Automatic Power Control (APC)' Laser Diode (LD) module maintains emission intensity module constant with high accuracy. stabilizing emission intensity module affected ambient temperature, AK2570 feeds compensation voltage from 2channels 8bits converter control Bias- Modulation- current module. compensation voltage corresponds temperature characteristic data module retained on-chip EEPROM ambient temperature detected on-chip thermo-sensor. AK2570 outputs alarm signal weakened emission caused aging degradation with comparing alarm threshold level signal from monitoring Photo Diode (PD). data compensation voltage alarm threshold level retained on-chip EEPROM suit characteristics each module.
FEATURE
Realizing function silicon chip Controlling driving current (the Bias- Modulation- current) module
Consisting 2channels 8bits converter Op-amp
EEPROM (Electrically Erasable Programmable Read Only Memory)
Non-volatile Memory memory capacity Address 9bits Data 16bits Retaining data compensation voltage trimming data T-SENSE offset voltage timing each module
On-chip Thermo-sensor (T-SENSE)
Detecting ambient temperature converting detected temperature voltage
On-chip Alarm circuit
Outputting alarm signal weakened emission caused aging degradation
On-chip Oscillator On-chip Power reset circuit Serial interface +3.3V±10% single voltage supply power consumption (30mA [max]) Small package (20pin SSOP 7.9mm
<MS0115-E-00>
2001/10
[AK2570]
BLOCK DIAGRAM
Register RDA1 (8bits) AMP1
Control
DAOUT1 SHUTDN
RDA2 EEPROM RDA3 Oscillator RVPD RTMP
(8bits) AMP2
DAOUT2
(8bits) (8bits) (8bits) Comparator T-SENSE ALMOUT
VPDIN
BIAS
VREF
RINT
ENVIN
Power Reset RATRM Timing Generator
AVDD AVSS DVDD DVSS
<MS0115-E-00>
TEMPTEST ALMMOD1 ALMMOD0
2001/10
ASAHI KASEI AK2570 consists these circuit blocks below. Circuit block Oscillator VREF Functional description
[AK2570]
This circuit generates standard clock that settles timing sequence internal circuit "Self-operation mode (Ordinary mode)". This circuit generates reference voltage converter, converter T-SENSE. This circuit thermo-sensor, outputs voltage corresponding ambient temperature, i.e. temperature voltage converter, transfers this output voltage AD2. Also integrates offset adjustment circuit that cancels distribution. converter encodes input voltage VPDIN-pin (the signal from monitor 8bits digital data. possible read encoded data monitor signal (the reference data RDA3) held RVPD register alarm threshold level degraded "Training mode". converter encodes T-SENSE output signal 8bits digital data. "Self- operation mode", encoded data ambient temperature detected
T-SENSE
T-SENSE converted EEPROM address utilized reading temperature characteristic data retained EEPROM. "Training mode", possible read encoded data detected temperature held RTMP register. This block consists converter Op-amp controls Bias-
DA1, AMP1
Modulation- current decodes 8bits digital data held RDA1 register compensation voltage temperature drift Inputting level signal SHUTDN-pin makes that DAOUT1-pin outputs (min.)'. This block consists converter Op-amp controls Bias-
DA2, AMP2 DA3, ALMOUT, Comparator, Timing Generator
Modulation- current decodes 8bits digital data held RDA2 register compensation voltage temperature drift Inputting level signal SHUTDN-pin makes that DAOUT2-pin outputs (min.)'. This block outputs level alarm signal from ALM-pin case that monitoring signal becomes lower than alarm threshold level retained EEPROM held RDA3 register, this case caused aging degradation. This memory non-volatile memory, capacity `Address 9bits Data 16bits' retains data below,
temperature compensation data (transferred RDA1 RDA2 registers) alarm threshold level data degraded (transferred RDA3 register) corresponding ambient temperature (the output from T-SNESE AD2). trimming data T-SENSE offset ALMOUT timing.
EEPROM
This circuit temporarily stores ambient temperature data RTMP register), Register Control Power Reset temperature compensation data RDA1 RDA2 registers), alarm threshold level data RDA3 register) This circuit controls internal circuit, e.g. registers, with serial interface. `Power ON', this circuit initializes data registers (see p.9) sets AK2570 "Self-operation mode".
<MS0115-E-00>
2001/10
[AK2570]
ASSIGNMENT
TEMPTEST BIAS DAOUT1 DAOUT2 AVDD AVSS VPDIN [10]
[20] ALMMOD0 [19] ALMMOD1 [18] SHUTDN [17] DVDD [16] DVSS [15] [14] [13] [12] [11] ENVIN
AK2570
Name TEMPTEST BIAS DAOUT1 DAOUT2 AVDD AVSS VPDIN ENVIN DVSS DVDD SHUTDN
Type Analog Analog Analog Analog Analog Analog Power Power Analog CMOS CMOS CMOS CMOS CMOS CMOS Power Power CMOS CMOS CMOS
Function Output voltage generated T-SENSE (Factory use) Output current reference determined external resistance Input feed back voltage AMP1 gain control Output compensation voltage Input feed back voltage AMP2 gain control Output compensation voltage Supply power analog part (+3.3V) Ground analog part (0V) Input signal monitor Output aging alarm Input envelope signal used burst transmission Input Chip Select signal with serial interface Input Shift clock with serial interface Input Data with serial interface Output Data with serial interface Ground digital part (0V) Supply power digital part (+3.3V) Input shut down signal Input select signal aging alarm mode Input select signal aging alarm mode
load load Remark
[Note
20pF
20pF
20pF
[Note
100pF
P.15 P.15 P.15
ALMMOD1 ALMMOD0
[Note Kindly insert external register (±1%) between BIAS-pin AVSS. [Note necessary input level signal CS-pin `Power ON'.
<MS0115-E-00>
2001/10
[AK2570]
FUNCTIONAL DESCRIPTION
Explanation `mode' AK2570 operational modes, "Self-operation mode" "Training mode". After executing evaluation adjustment module including AK2570 "Training mode", possible AK2570 ordinarily "Self-operation mode" compensating temperature drift module. "Self-operation mode" ordinary operational mode. ambient temperature drifts, AK2570 maintain emission intensity module constant executing operation, i.e. controlling Bias- Modulation- current module, periodically (the compensation period about 100msec) "Self-operation mode". (See p.6) other hand, "Training Mode", possible evaluate adjust AK2570 module access data EEPROM registers. (See p.7)
Constitution mode command
Self-operation mode
[Note1] [Note2]
Training mode
Initial setting
Activating internal circuit
Register access
EEPROM access
Command Self-operation mode Command Training mode Command Selecting Command Selecting
Command operation Command Resetting data RDA1-3
READ-REG WRITE-REG
EWEN EWDS WRITE-EEP READ-EEP
[Note While operating "Self-operation mode", possible shift "Training mode" executing `Command Training mode' this only available command. That that other command effective "Self-operation mode". [Note other hand, while operating "Training mode", possible shift "Self-operation mode" executing `Command Self-operation mode' forcing level signal SK-pin 50ms more AK2570 shifts "Self-operation mode" with behaving same operation `Power ON'.
<MS0115-E-00>
2001/10
ASAHI KASEI Explanation modes commands Self-operation mode
[AK2570]
on-chip `Power Reset' circuit initializes data registers sets AK2570 "Self-operation mode" automatically `Power ON'. "Self-operation mode", AK2570 operates below keeps emission intensity module constant periodically applying compensation voltage Biasand Modulation- current against temperature drift module. 50msec after resetting operation `Power ON', data EEPROM (Address 1111 1111 [EINT memory]') transferred RINT RATRM registers. Notice that data these registers change except case executing `Power again re-writing data with executing `WRITE-REG' command "Training mode'. "Self-operation mode", T-SENSE converts detected ambient temperature voltage. encodes this voltage 8bits digital data transfers this data RTMP register. This data converted EEPROM address utilized reading temperature characteristic data retained EEPROM. EEPROM data transferred RDA1 RDA3 registers output voltage controlled. realized that constant emission intensity independent with temperature drift controlling Bias- Modulation- current module alarm signal weakened This behavior executed periodically (the period about 100ms). While operating "Self-operation mode", impossible execute command except `Command Training mode'.
Power
'Power Reset' circuit operates initializes data registers.
data RINT RATRM registers retained EEPROM (Address="1 1111 1111") transferred REG0 register. period about 100ms
data transferred from REG0 register RINT RATRM registers.
executes conversion output voltage from T-SENSE. 0.6ms
50ms
output data "XXXX XXXX" generated transferred RTMP register. access EEPROM executed with referring data held RTMP register. data RDA1~2 registers retained EEPROM (address xxxx xxx0") transferred D31~D16 REG0 register. data RDA3 register retained EEPROM (address xxxx xxx1") transferred D15~D8 REG0 register. data REG0 register transferred RDA1 RDA3 registers.
waiting next compensatory operation. Note) REG0 register This register synsthesizes 32bits data temporarily holds data when transferring data from EEPROM registers.
<MS0115-E-00>
2001/10
ASAHI KASEI Training mode
[AK2570]
"Training mode" used evaluation adjustment about AK2570. possible write read data EERPOM registers execute activating internal circuit setting temperature compensation data with serial interface. Notice that possible shift "Training mode" executing `Command Training mode' other command available while operating "Self-operation mode". After executing `Command Training mode', necessary input clock level signal SK-pin continuously keep operational mode "Training mode". able return "Selfoperational mode" forcing level signal SK-pin 50msec more "Training mode". "Training mode", periodical operation temperature compensation stopped. Also time executing `Command Training mode' while operating "Self-operational mode", AK2570 transfers "Training mode" after completing periodical operation. Recommended sequence "Training mode
START temperature minimum value (e.g. Execute 'Command Training mode'
Initial setting Command Training mode
Write '00000' RINT register Register access WRITE-REG(RINT)
'+1' data RINT register
Register access WRITE-REG(RINT)
executes conversion Initial Setting Command Selecting Activating Internal Circuit T-SENSE output
Command operation
Confirm code generated '00000010'~'00001000' (e.g.
(See p.15)
Register Access READ-REG(RTMP)
data that will retained EDA1 &EDA2 characteristics Change ambient temperature
Register access READ-REG(RTMP)
Register Access WRITE-REG(RDA1) Register Access WRITE-REG(RDA2) Evaluation characteristics Adjusting monitoring Initial Setting Command Selecting Activating Internal Circuit Command operation Register Access READ-REG(RVPD)
After execting conversion input voltage VPDIN-pin, read data RVPD register that will retained EDA3 Complete measurement compensation data Make data writing EEPROM Write compensatory data EEPROM FINISH
EEPROM Access EWEN EEPROM Access WRITE-EEP
<MS0115-E-00>
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ASAHI KASEI Initial Setting Command Self-operation mode
[AK2570]
executing `Command Self-operation mode', possible transfer mode from "Training mode" "Self-operation mode". Command Training mode executing `Command Training mode', possible transfer mode from "Self-operation mode" "Training mode". Also command except `Command Training mode' available while AK2570 operates "Self-operation mode". Command Selecting `Command selecting AD1' available "Training mode". This command sets that (the converter input voltage VPDIN-pin) enable operation selector between RVPD register available. After this command performed, 8bits digital data VPDIN-pin signal encoded stored RVPD register executing `Activating internal circuit Command operation'. Command Selecting `Command selecting AD2' available "Training mode". This command sets that (the converter output voltage from T-SENSE) enable operation selector between RTMP register available. After this command performed, 8bits digital data T-SENSE output encoded stored RTMP register executing `Activating internal circuit Command operation'. Activating internal circuit Command operation `Command operation' makes that selected converter (AD1 AD2) operates selected register (RVPD register RTMP register) stores data generated converter selected executing `Command Selecting AD1' `Command Selecting AD2'. Also this command makes only that selected register stores 8bits digital data generated selected converter. Command Resetting data RDA1-3 `Command Resetting data RDA1-3' sets that RDA1 RDA3 registers hold data retained EEPROM which address nominated data RTMP register. Also this command always available "Training mode" independent with selector `Command Selecting AD1' `Command Selecting AD2'.
III) Register Access Command reading data register (READ-REG able read data held nominated register executing `READ-REG' command. Command Writing data register (WRITE-REG) able write data nominated register executing `WRITE-REG' command. <MS0115-E-00> 2001/10
ASAHI KASEI Register
Name RTMP RDA1 RDA2 RDA3 RINT RVPD RATRM Address Data Function
[AK2570]
Holding data (temperature) generated Holding data Holding data Holding data Holding trimming data T-SENSE [*1] Holding data (VPDIN) generated Holding trimming data ALMOUT [*2]
RINT register stores initial data offset voltage T-SENSE [*2] ATRM register stores adjustment data alarm timing 50Mbps 156Mbps burst transmission (AKM recommends EEPROM data RATRM register already written shipment.
Initial register data
Name RTMP RDA1 RDA2 RDA3 RINT RVPD RATRM Address
<Note> indefinite, `0'.
EEPROM Access Command enabling write data EEPROM (EWEN) `EWEN' command makes possible write data EEPROM. necessary execute this command before writing data EEPROM, because automatically `Power prohibit writing data EEPROM. "Training mode", always possible write data EEPROM after executing this command except case `Power OFF' executing `EWDS' command. Command prohibiting write data EEPROM (EWDS) `EWDS' command makes impossible write data EEPROM same setting `Power ON'. This command available change setting prohibit writing data EEPROM without `Power OFF'. Command writing data EEPROM (WRITE-EEP) able write data nominated EEPROM executing `WRITE-EEP' command. necessary execute `EWEN' command first permitting write data EEPROM. Command reading data EEPROM (READ-EEP) able read data held nominated EEPROM executing `READ-EEP' command.
<MS0115-E-00>
2001/10
ASAHI KASEI EEPROM
Name EDA12 EDA3 EDA12 EDA3 EDA12 EDA3 ERES EINT Address 0000 0000 0000 0001 0000 0010 0000 0011 1111 1100 1111 1101 1111 1110 1111 1111 unused bits (3bit) data RDA1 (8bit) data RDA3 (8bit) data RDA1 (8bit) data RDA3 (8bit) data RDA1 (8bit) data RDA3 (8bit) Data
[AK2570]
data RDA2 (8bit) unused bits (8bit) data RDA2 (8bit) unused bits (8bit) data RDA2 (8bit) unused bits (8bit)
reserved bits (16bit) data RATRM unused bits data RINT D8(5bit) (3bit) (5bit)
<Note> cannot assure period data retention (10years [min.] 85°C) `The unused bits'. <Note> Kindly attention when writing data RINT, because EINT also retains data RATRM register written AKM.
Serial Interface "Training mode", able execute access EEPROM registers input operational command AK2570 with 32bits serial data 4pins consist CS(#12), SK(#13), DI(#14) DO(#15). Constitution serial interface data "Initial setting", "Activating Internal Circuit" "Register Access" (total 32bits)
Classification 4bits Selection 1bit Address 3bits Data 24bits
"EEPROM Access" (Total 32bits)
Classification 4bits Command 2bits Address 10bits Data 16bits
<Note> These bits contain arbitrary (the data definite, `1')'. Please refer table next page.
<MS0115-E-00>
2001/10
[AK2570]
Access serial interface
Classification Select Classification [4]EEPROM Access [3]Register Access [2]Activating Internal Circuit [1]Initial Setting Address Data Execution Command Ordinary mode Command Training mode Command Selecting Command Selecting Command operation Command Resetting data RDA1-3 READ-REG (RTMP) READ-REG (RDA1) READ-REG (RDA2) READ-REG (RDA3) READ-REG (RINT) READ-REG (RVPD) READ-REG (RATRM) WRITE-REG (RTMP) WRITE-REG (RDA1) WRITE-REG (RDA2) WRITE-REG (RDA3) WRITE-REG (RINT) WRITE-REG (RVPD) WRITE-REG (RATRM) EWDS EWEN WRITE-EEP READ-EEP Execution
Address Data
Command
Note) this table definite, `1'.
<MS0115-E-00>
2001/10
[AK2570]
III) Timing serial interface Initial Setting
Command Self-operation mode Command Training mode Command Selecting Command Selecting
Activating Internal Circuit
Command operation
Command Resetting data RDA1-3
<Note> case executing `Command Resetting data RDA1-3', necessary input clocks SK-pin with keeping force level signal CS-pin.
Register Access
Command reading data register(READ-REG)
Don't care ('0' '1') Hi-Z
Hi-Z
<MS0115-E-00>
2001/10
Command writing data register (WRITE-REG)
[AK2570]
Data 8bits 8bits 8bits 8bits 5bits 8bits 5bits
Register RTMP RDA1 RDA2 RDA3 RINT RVPD RATRM
EEPROM Access
Command enabling/prohibiting write data EEPROM (EWEN/EWDS)
EWDS command EWEN command
Command writing data EEPROM (WRITE-EEP)
Hi-Z
tE/W
Command reading data EEPROM (READ-EEP)
Hi-Z
<MS0115-E-00>
2001/10
ASAHI KASEI Thermo-sensor (T-SENSE)
[AK2570]
Kindly figure below that shows relationship between detected ambient temperature generated output voltage (VT) T-SENSE.
Encoded data 0000 0000 0000 0001 0000 0010 0000 0011
Output voltage Offset voltage
0111 1111 1000 0000 1000 0001
1111 1100 1111 1101 1111 1110 1111 1111 ->1111 1110 Note
Ambient temperature T[C]
[Note] `Self-operation mode', unique case that data "1111 1111" generated converted "1111 11110" automatically EEPROM data address 1111 110X' used compensation data, this reason that EEPROM which address 1111 111X" retains reserved data trimming data T-SENSE ALMOUT. 2.2V (Typ.) -40°C 0.0V 85°C above distribution each LSI. However possible cancel distributed offset voltage arising T-SENSE among LSIs setting data ~D0) RINT register. offset cancel voltage (Reference) corresponding data ~D0) RINT register shown table below. RINT register Offset cancel voltage [mV] (Reference +375 +350 +325 +300 -325 -350 -375 -400
<MS0115-E-00>
2001/10
ASAHI KASEI *Set RINT register
[AK2570]
offset voltage arising T-SENSE slightly different distribution among LSIs. Please adjust that data RTMP register exists between `Minimum code' `Maximum code' shown this table `Minimum ambient temperature use' with writing data RINT register "Training mode", refer `Recommended sequence "Training mode" p.7. Minimum ambient temperature -20°C -30°C -40°C case fitting +25°C(Reference) Minimum code 01000010 00100010 00010010 00000010 01100110 Maximum code 01001000 00101000 00011000 00001000 01101100
<Reference> 1LSB output data (8bits) 8.63mV (Typ. Therefore 6codes 51.8mV (Typ.) corresponding range between `Minimum code' `Maximum code' shown above table. other hand, step offset cancel voltage 25mV (Typ.) possible adjust output voltage T-SNESE range `Minimum code' `Maximum code'. After this offset voltage adjustment, output voltage from T-SENSE becomes appropriate input range every ambient temperature (-40°C +85°C). Also `Minimum code' `Maximum code' this adjustment increase codes/10°C.
converter (DA1 DA2) normal operation, forcing level signal SHUTDN-pin makes that DAOUT1 (the output +AMP1) DAOUT2 (the output DA2+AMP2) utput voltage corresponding data RDA1 RDA2 registers. other hand, forcing level signal SHUTDN-pin makes that DAOUT1 DAOUT2 output (Min.). Also data RDA1 RDA2 registers does change held while forcing `Shut down signal (the level)'. forcing level signal SHUTDN-pin again, DAOUT1 DAOUT2 output signal corresponding continuously held data RDA1 RDA2 registers.
Alarm circuit (DA3, ALMOUT, Comparator Timing Generator) Mode setting alarm circuit modes (the Continuous mode, 156Mbps burst transmission mode 50Mbps burst transmission mode). Each mode signals forced ALMMOD0-pin ALMMOD1-pin. ALMMOD1 ALMMOD0 Mode Continuous mode 50Mbps burst transmission mode 156Mbps burst transmission mode Prohibited
<MS0115-E-00>
2001/10
ASAHI KASEI Continuous mode
[AK2570]
alarm circuit compares input voltage VPDIN-pin (the monitoring signal) output voltage from (the alarm threshold level). data alarm threshold level retained EEPROM (EDA3), transferred RDA3 converted signal DA3. time, level alarm signal generated outputted from ALM-pin case that input voltage VPDIN-pin becomes lower than output voltage DA3.
III) 50Mbps burst transmission mode 156Mbps burst transmission mode alarm circuit compares input voltage VPDIN-pin (the monitoring signal) output voltage from (the alarm threshold level). data alarm threshold level retained EEPROM (EDA3), transferred RDA3 converted signal DA3. alarm circuit detects polarity input signal ENVIN-pin constant timing (the detecting point) from rising edge this signal. alarm circuit outputs alarm signal (the level) from ALM-pin case that input voltage VPDIN-pin lower than output voltage from ENVIN signal still kept level. Also alarm circuit detects rising edge ENVIN signal fixes constant timing output alarm signal. case that VPDIN signal recovers becomes higher than alarm threshold level detecting point with ENVIN that ENVIN signal becomes level, alarm circuit outputs level (the normal signal) from ALM-pin.
case outputting alarm signal continuously
ENVIN
fixed timing outputting alarm signal
case stopping alarm signal (the VPDIN signal recovers)
ENVIN
fixed timing outputting alarm signal
VPDIN signal recovers
<MS0115-E-00>
2001/10
[AK2570]
ABSOLUTE MAXIMUM RATING
Parameter Power supply voltage Ground level Digital input voltage Analog input voltage Input current Storage temperature Symbol VDIN VAIN TSTG Min. -0.3 -0.3 -0.3 Max. VDD+0.3 VDD+0.3 +125 Unit Except pins above Remark DVDD-pin, AVDD-pin DVSS-pin, AVSS-pin
<Note> AK2570 operate abnormally broken under condition exceeding range shown above.
RECOMMENDED OPERATING CONDITION
assure characteristics AK2570 specified this data sheet under condition below. Parameter Power supply voltage Ambient temperature operation Symbol Min. 2.97 Typ. 3.30 Max. 3.63 Unit Remark
<MS0115-E-00>
2001/10
[AK2570]
ELECTRICAL CHARACTERISTICS
Power Consumption Parameter Consumptive current Symbol Min. Typ. Max. Unit Remark
<Note> consumptive current which does include driving current outputs measured under condition that digital input pins connected VDD.
EEPROM characteristics Parameter EEPROM total writing times EEPROM data retention EEPROM data retention Digital Part characteristics Parameter Input higher voltage Input lower voltage Input higher current Input lower current Output higher voltage Output lower voltage characteristics Parameter Period Pulse duty Delay time CS=`H' SK=`H'[*] Delay time SK=`L' CS=`L' Time setting data Time holding data Delay time output Time write EEPROM Minimum time level Delay time CS=`L' DO=`Hi-Z' Symbol tSKP tSKP tSKW tCSS tCSH tDIS tDIH tE/W 100pF Condition While conversion While other operation Min. Typ. Max. Unit Symbol -0.2mA 0.2mA 0.9VDD 0.1VDD Condition Min. 0.7VDD Typ. Max. 0.3VDD Unit Min. 10000 Typ. Max. Unit time year year 85°C 50°C (Reference) Remark
necessary force level SK-pin rising edge signal apply clock SK-pin 150msec more after this rising edge signal.
<MS0115-E-00>
2001/10
ASAHI KASEI Digital Part characteristics Timing Timing command input
tCSS tSKW tSKW tSKP
[AK2570]
tDIS tDIH High-Z
Timing data output
tCSH
High-Z
Timing writing data EEPROM
tCSH
tDIS tDIH
High-Z
tE/W
<MS0115-E-00>
2001/10
ASAHI KASEI Analog part Input characteristics converter Resolution Conversion time Input range (Peak voltage) 8bits linear About 150µs clocks ±2LSB 0.0V 1.0V [Typ] 1.0V Input voltage
[AK2570]
(Straight binary) Resolution Conversion time Input range (Temperature) 8bits linear About 150µs clocks ±0.7LSB 0.0V 2.2V [Typ.] Input voltage (Detected temperature) 2.2V (-40°C) 0.0V
(Straight binary) 0.0V 85°C)
Output characteristics converter DA1, Parameter Resolution Maximum output voltage Minimum output voltage Output voltage shut down operation Output current
ambient temperature.
Min. -1/2 0.425 0.000 2.50
Typ.
Max. +1/2
Unit
Remark Circuit design <Note>
0.500
0.575 10.0 5.000
SHUTDN-pin forced Input code =181 (dec)
<Note> included range distribution caused fluctuations power source voltage
<MS0115-E-00>
2001/10
ASAHI KASEI over shoot voltage relieving shut down operation Input data 11111111 11111110 00001001 00001000 00000111 00000110 00000001 00000000 Min. Resolution Voltage step code Maximum output voltage Minimum output voltage Typ. 3.92 1.00 0.00 Max. Unit Remark Circuit design 13.0 (Stabilized 120µs) `Output Min. Typ. Max. Unit
[AK2570]
Remark
Designed guarantee value
Designed guarantee value
Designed guarantee value Designed guarantee value Designed guarantee value
Relationship between input digital code output voltage converter Digital code Output voltage (Typ.) 11111111 500mV 00000001 00000000 11111111 00000001 00000000 11111111 00000001 00000000 1.96mV 0.0V 500mV 1.96mV 0.0V 1.0V 3.92mV 0.0V
<MS0115-E-00>
2001/10
ASAHI KASEI Output characteristics alarm signal Continuous mode Parameter Delay time signal Symbol tDLY Condition output=0.5V Min. Typ. Max.
[AK2570]
units
VPDIN tDLY
output
50Mbps burst transmission mode Parameter Start time detecting signal Total time detecting signal Time detecting signal Time confirming VPDIN signal Time outputting signal Symbol tENVDT1 tENVDT2 tENVDT tVIN tALMO CL=20pF 463.0 212.2 771.6 Condition Min. 463.0 617.3 154.3 Typ. Max. unit
condition measuring `Time outputting signal' that input voltage VPDIN-pin 0.0V (constant).
(51.84MHz)
tENVDT2 tENVDT1 ENVIN tVIN VPDIN tALMO tENVDT
<Note> clock (51.84MHz) applied AK2570. 156Mbps burst transmission mode Parameter Start time detecting signal Total time detecting signal Time detecting signal Time confirming VPDIN signal Time outputting signal Symbol tENVDT1 tENVDT2 tENVDT tVIN tALMO CL=20pF 167.2 64.3 372.9 Condition Min. 167.2 218.8 51.4 Typ. Max. unit
[*]The condition measuring `Time outputting signal' that input voltage
<MS0115-E-00>
2001/10
VPDIN-pin 0.0V (constant).
[AK2570]
(155.52MHz)
tENVDT2 tENVDT1 ENVIN tVIN VPDIN tALMO tENVDT
<Note> clock (155.52MHz) applied AK2570.
Delay time between falling edge ENVIN that 50Mbps burst transmission mode 156Mbps burst transmission mode, signal becomes level case that signal still generated level) level signal forced ENVIN-pin (ENV signal). There delay time between falling edge signal that signal this case.
Parameter Delay time between falling edge ENVIN that
Symbol tALMDL
Condition CL=20pF
Min.
Typ.
Max. 19.3
unit
ENVIN
tALMDL
Error judgment signal There some error judgment generating alarm signal. Therefore signal will often generated case that input voltage VPDIN-pin slightly bigger than output (the alarm threshold level). error shown below value against output. output (Typ.) 58.8mV 98.0mV Error judgment signal ±3dB ±2dB converted value power Remarks Designed reference value Designed reference value
<MS0115-E-00>
2001/10
[AK2570]
RECOMMENDED EXTERNAL CIRCUIT
BIAS-pin reference voltage Kindly connect resistance (the accuracy) between BIAS-pin AVSS with line pattern short possible.
AK2570
R=75k BIAS(#2) AVSS
Power pins Kindly insert capacitor shown below between DVDD-DVSS AVDD-AVSS.
AK2570
AVDD(#7) [DVDD(#17)] C=0.1 AVSS(#8) [DVSS(#16)]
<MS0115-E-00>
2001/10
[AK2570]
EXAMPLE EXTERNAL CIRCUIT
examples external circuit DAOUT1-pin FB1-pin DAOUT2-pin FB2-pin shown below case direct variation Example
AK2570
DAOUT1(#4)
FB1(#3) Driver Circuit DAOUT2(#6)
FB2(#5)
Example
AK2570
DAOUT1(#4)
FB1(#3) DAOUT2(#6)
Voltage Bias current Driver Voltage Modulation current
FB2(#5)
example external circuit VPDIN-pin shown below.
AK2570
VPDIN(#9)
<MS0115-E-00>
2001/10
[AK2570]
PACKAGE
Package type 20pin SSOP
Marking surface package Index Indicating Company name Product AK2570 Date code XXXXXXX figures)
Package size
7.2TYP
AK2570
xxxxxxx
0.13 0.32± 0.10 0.10± 0.10
0.65
2.10MAX
0.10
<MS0115-E-00>
2001/10
7.90± 0.20
5.3TYP
0.6±
7.4MAX
0.22± 0.05
[AK2570]
IMPORTANT NOTICE These products their specifications subject change without notice. Before considering application, consult Asahi Kasei Microsystems Co., Ltd. (AKM) sales office authorized distributor concerning their current status. assumes liability infringement patent, intellectual property, other right application nformation contained herein. export these products, devices systems containing them, require export license other official approval under regulations country export pertaining customs tariffs, currency exchange, strategic materials. products neither intended authorized critical components safety, life support, other hazard related device system, assumes responsibility relating such use, except with express written consent Representative Director AKM. used here: hazard related device system designed intended life support maintenance safety applications medicine, aerospace, nuclear energy, other fields, which failure function perform reasonably expected result loss life significant injury damage person property. critical component whose failure function perform reasonably expected result, whether directly indirectly, loss safety effectiveness device system containing which must therefore meet very high standards performance reliability. responsibility buyer distributor product distributes, disposes otherwise places product with third party notify that party advance above content conditions, buyer distributor agrees assume responsibility liability hold harmless from claims arising from said product absence such notification.
<MS0115-E-00>
2001/10
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