IRLR3802PbF IRLU3802PbF Applications High Frequency 3.3V input Po
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95089A
IRLR3802PbF IRLU3802PbF
Applications High Frequency 3.3V input Pointof-Load Synchronous Buck Converters Power Management Netcom, Computing Portable Applications. Lead-Free Benefits Ultra-Low Gate Impedance Very RDS(on) Fully Characterized Avalanche Voltage Current
HEXFET® Power MOSFET
VDSS
RDS(on)
8.5m
27nC
D-Pak IRLR3802
I-Pak IRLU3802
Absolute Maximum Ratings
Symbol
25°C 100°C 25°C 100°C TSTG
Parameter
Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, 4.5V Continuous Drain Current, 4.5V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction Storage Temperature Range
Max.
0.59
Units
mW/°C
Thermal Resistance
Parameter
Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient
Typ.
Max.
Units
°C/W
Notes through page
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12/7/04
IRLR/U3802PbF
Static 25°C (unless otherwise specified)
BVDSS
VDSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 Qgd) Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS Qgs1 Qgs2 Qgodr Qoss td(on) td(off) Ciss Coss Crss
Min.
Typ. 0.009 -3.2 2490 2150
Max. Units Conditions 250µA V/°C Reference 25°C, 4.5V, 2.8V, VGS, 250µA mV/°C 9.6V, 9.6V, 125°C -200 -12V 6.0V, 6.0V 5.0V 6.0A Fig.16 10V, 6.0V, 4.5V Clamped Inductive Load 6.0V 1.0MHz
Avalanche Characteristics
Symbol
Parameter
Single Pulse Avalanche Energy Avalanche Current
Typ.
Max.
Units
Diode Characteristics
Symbol
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units 0.81 0.65
Conditions MOSFET symbol showing integral reverse junction diode. 25°C, 12A, 125°C, 12A, 25°C, 12A, VR=20V di/dt 100A/µs 125°C, 12A, VR=20V di/dt 100A/µs
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IRLR/U3802PbF
1000
4.5V 3.5V 2.5V 2.3V 2.0V 1.8V BOTTOM 1.5V
1000
Drain-to-Source Current
Drain-to-Source Current
4.5V 3.5V 2.5V 2.3V 2.0V 1.8V BOTTOM 1.5V
1.5V
1.5V 20µs PULSE WIDTH 25°C
0.01
20µs PULSE WIDTH 175°C
VDS, Drain-to-Source Voltage
VDS, Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
1000
RDS(on) Drain-to-Source Resistance
4.5V
Drain-to-Source Current
25°C
175°C
(Normalized)
5.0V 20µs PULSE WIDTH
VGS, Gate-to-Source Voltage
Junction Temperature (°C)
Typical Transfer Characteristics
Normalized On-Resistance Temperature
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IRLR/U3802PbF
100000 Ciss SHORTED Crss Coss
6.0A
Gate-to-Source Voltage
Capacitance (pF)
10000
Ciss Coss
1000
Crss
VDS, Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000.0
1000
OPERATION THIS AREA LIMITED (on)
100.0 175°C 10.0
Drain-to-Source Current
ISD, Reverse Drain Current
100µsec 1msec
25°C 175°C Single Pulse
10msec
25°C
VSD, Source-toDrain Voltage
Drain-toSource Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRLR/U3802PbF
LIMITED PACKAGE
Drain Current
D.U.T
Pulse Width Duty Factor 0.1%
10a. Switching Time Test Circuit
Case Temperature (°C)
Maximum Drain Current Case Temperature
td(on)
td(off)
10b. Switching Time Waveforms
Thermal Response thJC
0.50 0.20 0.10
0.05 0.02 0.01
0.01
SINGLE PULSE THERMAL RESPONSE
0.001 1E-006 1E-005 0.0001 0.001 0.01
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRLR/U3802PbF
EAS, Single Pulse Avalanche Energy (mJ)
5000
DRIVER
4000
BOTTOM
8.0A
D.U.T
3000
0.01
2000
12a. Unclamped Inductive Test Circuit
V(BR)DSS
1000
Starting Junction Temperature (°C)
12c. Maximum Avalanche Energy Drain Current
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
VGS(th) Gate threshold Voltage
.2µF .3µF
250µA
D.U.T.
Current Sampling Resistors
Gate Charge Test Circuit
Temperature
Threshold Voltage Temperature
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IRLR/U3802PbF
D.U.T
Driver Gate Drive
P.W.
Period
P.W. Period VGS=10V
Circuit Layout Considerations Stray Inductance Ground Plane Leakage Inductance Current Transformer
D.U.T. Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt
dv/dt controlled Driver same type D.U.T. controlled Duty Factor D.U.T. Device Under Test
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple
Logic Level Devices Peak Diode Recovery dv/dt Test Circuit N-Channel HEXFET® Power MOSFETs
Vgs(th)
Qgs1 Qgs2
Qgodr
Gate Charge Waveform
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IRLR/U3802PbF
D-Pak (TO-252AA) Package Outline
Dimensions shown millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: IRFR120 EMBLY CODE 1234 EMBLED 1999 EMBLY LINE Note: sembly line ition indicates "Lead-Free" ERNAT IONAL RECT IFIER LOGO EMBLY CODE PART NUMBER
IRFU120 916A
CODE YEAR 1999 WEEK LINE
ERNAT IONAL RECT IFIER LOGO EMBLY CODE PART NUMBER
IRFU120
CODE IGNATES LEAD-FREE PRODUCT (OPT IONAL) YEAR 1999 WEEK EMBLY CODE
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IRLR/U3802PbF
I-Pak (TO-251AA) Package Outline
Dimensions shown millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
EXAMPLE: IRFU120 EMBLY CODE 5678 EMBLED 1999 EMBLY LINE Note: assembly line position indicates "Lead-Free" ERNAT IONAL RECT IFIER LOGO EMBLY CODE PART NUMBER
U120 919A
CODE YEAR 1999 WEEK LINE
ERNAT IONAL RECT IFIER LOGO EMBLY CODE PART NUMBER
IRFU120
CODE IGNAT LEAD-FREE PRODUCT (OPT IONAL) YEAR 1999 WEEK EMBLY CODE
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IRLR/U3802PbF
D-Pak (TO-252AA) Tape Reel Information
Dimensions shown millimeters (inches)
16.3 .641 15.7 .619
16.3 .641 15.7 .619
12.1 .476 11.9 .469
FEED DIRECTION
.318 .312
FEED DIRECTION
NOTES CONTROLLING DIMENSION MILLIMETER. DIMENSIONS SHOWN MILLIMETERS INCHES OUTLINE CONFORMS EIA-481 EIA-541.
INCH
NOTES OUTLINE CONFORMS EIA-481.
Notes:
Repetitive rating; pulse width limited
max. junction temperature.
Pulse width 400µs; duty cycle Calculated continuous current based maximum allowable
junction temperature. Package limitation current 30A.
Starting 25°C, 1.4mH
20A.
When mounted square (FR-4 G-10 Material). recommended footprint soldering techniques refer application note #AN-994.
Data specifications subject change without notice. This product been designed qualified Industrialmarket. Qualification Standards found IR's site.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information.12/04
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