N-CHANNEL 0.07 TO-220/TO-220FP STripFETII POWER MOSFET TYPE STP16

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N-CHANNEL 0.07 TO-220/TO-220FP STripFETII POWER MOSFET TYPE STP16

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STP16NF06L STP16NF06LFP
N-CHANNEL 0.07 TO-220/TO-220FP STripFETII POWER MOSFET
TYPE STP16NF06L STP60NF06LFP
VDSS
RDS(on) <0.09 <0.09
TYPICAL RDS(on) 0.07 EXCEPTIONAL dv/dt CAPABILITY GATE CHARGE THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET latest development STMicroelectronis unique "Single Feature SizeTM" stripbased process. resulting transistor shows extremely high packing density on-resistance, rugged avalanche characteristics less critical alignment steps therefore remarkable manufacturing reproducibility. TO-220 TO-220FP
INTERNAL SCHEMATIC DIAGRAM APPLICATIONS MOTOR CONTROL, AUDIO AMPLIFIERS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID RELAY DRIVERS DC-DC DC-AC CONVERTERS AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol VDGR Ptot dv/dt VISO Tstg Parameter STP16NF06L Drain-source Voltage (VGS Drain-gate Voltage (RGS Gate- source Voltage Drain Current (continuous) 25°C Drain Current (continuous) 100°C Drain Current (pulsed) Total Dissipation 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Insulation Withstand Voltage (DC) Storage Temperature Operating Junction Temperature 2500 11(*) 7.5(*) 44(*) 0.17 Value STP16NF06LFP W/°C V/ns Unit
Pulse width limited safe operating area. Current Limited package's thermal resistance
16A, di/dt 210A/µs, V(BR)DSS, TJMAX. Starting
March 2004
STP16NF06L/FP
THERMAL DATA
TO-220 Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature Soldering Purpose 3.33 62.5 TO-220FP °C/W °C/W
ELECTRICAL CHARACTERISTICS (Tcase unless otherwise specified)
Symbol V(BR)DSS IDSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS Gate-body Leakage Current (VDS Test Conditions Rating Rating 125°C Min. ±100 Typ. Max. Unit
IGSS
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source Resistance Test Conditions Min. 0.08 0.07 Typ. Max. 0.10 0.09 Unit
DYNAMIC
Symbol Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions ID(on) RDS(on)max, 25V, MHz, Min. Typ. Max. Unit
STP16NF06L/FP
ELECTRICAL CHARACTERISTICS (continued) SWITCHING
Symbol td(on) Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions (Resistive Load, Figure VGS= Min. Typ. Max. Unit
SWITCHING
Symbol td(off) Parameter Turn-off Delay Time Fall Time Test Conditions 4.7, (Resistive Load, Figure Min. Typ. 12.5 Max. Unit
SOURCE DRAIN DIODE
Symbol ISDM IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current 67.5 Test Conditions Min. Typ. Max. Unit
di/dt 100A/µs 150°C (see test circuit, Figure
(*)Pulsed: Pulse duration duty cycle width limited safe operating area.
Safe Operating Area TO-220
Safe Operating Area TO-220FP
STP16NF06L/FP
Thermal Impedance Thermal Impedance TO-220FP
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source Resistance
STP16NF06L/FP
Gate Charge Gate-source Voltage Capacitance Variations
Normalized Gate Threshold Voltage Temperature
Normalized Resistance Temperature
Source-drain Diode Forward Characteristics
STP16NF06L/FP
Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform
Fig. Switching Times Test Circuits Resistive Load
Fig. Gate Charge test Circuit
Fig. Test Circuit Inductive Load Switching Diode Recovery Times
STP16NF06L/FP
TO-220 MECHANICAL DATA
DIM. MIN. DIA. 13.0 2.65 15.25 3.75 0.49 0.61 1.14 1.14 4.95 10.0 16.4 14.0 2.95 15.75 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107
Dia.
P011C
STP16NF06L/FP
TO-220FP MECHANICAL DATA
DIM. MIN. 28.6 15.9 0.45 0.75 1.15 1.15 4.95 30.6 10.6 16.4 1.126 0.385 0.626 0.354 0.118 TYP. MAX. 2.75 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
STP16NF06L/FP
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2004 STMicroelectronics Rights Reserved
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N-CHANNEL 0.07 TO-220/TO-220FP STripFETII POWER MOSFET TYPE STP16

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