N-CHANNEL 650V 0.38 TO-220 I2SPAK Zener Protected SuperMESHMOSFET

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N-CHANNEL 650V 0.38 TO-220 I2SPAK Zener Protected SuperMESHMOSFET

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STP16NK65Z STB16NK65Z-S
N-CHANNEL 650V 0.38 TO-220 I2SPAK Zener Protected SuperMESHMOSFET
Table General Features
TYPE STP16NK65Z STB16NK65Z-S
Figure Package
VDSS
RDS(on) 0.50 0.50
TYPICAL RDS(on) 0.38 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY
TO-220
DESCRIPTION SuperMESHseries obtained through extreme optimization ST's well established stripbased PowerMESHlayout. addition pushing on-resistance significantly down, special care taken ensure very good dv/dt capability most demanding applications. Such series complements full range high voltage MOSFETs including revolutionary MDmeshproducts. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL OFF-LINE POWER SUPPLIES
Figure Internal Schematic Diagram
Table Order Codes
SALES TYPE STP16NK65Z STB16NK65Z-S MARKING P16NK65Z B16NK65Z PACKAGE TO-220 PACKAGING TUBE TUBE
Rev. September 2004 1/11
STP16NK65Z STB16NK65Z-S
Table Absolute Maximum ratings
Symbol VDGR PTOT VESD(G-S) dv/dt Tstg Parameter Drain-source Voltage (VGS Drain-gate Voltage (RGS Gate- source Voltage Drain Current (continuous) 25°C Drain Current (continuous) 100°C Drain Current (pulsed) Total Dissipation 25°C Derating Factor Gate source (HBM-C=100pF, R=1.5k) Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature Value 8.19 1.51 6000 Unit W/°C V/ns
Pulse width limited safe operating area di/dt A/µs, V(BR)DSS,T JMAX
Table Thermal Data
Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature Soldering Purpose 0.66 62.5 °C/W °C/W
Table Avalanche Characteristics
Symbol Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting IAR, Max. Value Unit
Table Gate-Source Zener Diode
Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Condition Igs=± (Open Drain) Min. Typ. Max. Unit
PROTECTION FEATURES GATE-TO-SOURCE ZENER DIODES built-in back-to-back Zener diodes have specifically been designed enhance only device's capability, also make them safely absorb possible voltage transients that occasionally applied fromgate source. this respect Zener voltage appropriate achieve efficient cost-effective intervention protect device's integrity. These integrated Zener diodes thus avoid usage external components.
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STP16NK65Z STB16NK65Z-S
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table On/Off
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS Gate-body Leakage Current (VDS Gate Threshold Voltage Static Drain-source Resistance Test Conditions Rating Rating, VGS, 10V, 3.75 0.38 Min. 0.50 Typ. Max. Unit
Table Dynamic
Symbol Ciss Coss Crss Coss td(on) td(off) Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions MHz, Min. Typ. 2750 Max. Unit
(see Figure (see Figure
Table Source Drain Diode
Symbol ISDM IRRM IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt A/µs, 25°C (see Figure di/dt A/µs, 150°C (see Figure 22.5 Test Conditions Min. Typ. Max. Unit
Pulsed: Pulse duration 300µs, duty cycle 1.5% Pulse width limited safe operating area Coss defined constant equivalent capacitance giving same charging time Coss when increases from VDSS
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STP16NK65Z STB16NK65Z-S
Figure Safe Operating Area Figure Thermal Impedance
Figure Output Characteristics
Figure Transfer Characteristics
Figure Transconductance
Figure Static Drain-source Resistance
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STP16NK65Z STB16NK65Z-S
Figure Gate Charge Gate-source Voltage Figure Capacitance Variations
Figure Normalized Gate Thereshold Voltage Temperature
Figure Normalized Resistance Temperature
Figure Dource-Drain Diode Forward Characteristics
Figure Normalized BVdss Temperature
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STP16NK65Z STB16NK65Z-S
Figure Avalanche Energy Starting
6/11
STP16NK65Z STB16NK65Z-S
Figure Unclamped Inductive Load Test Circuit Figure Unclamped Inductive Wafeform
Figure Switching Times Test Circuit Resistive Load
Figure Gate Charge Test Circuit
Figure Test Circuit Inductive Load Switching Diode Recovery Times
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STP16NK65Z STB16NK65Z-S
TO-220 MECHANICAL DATA
DIM. MIN. 4.40 0.61 1.15 0.49 15.25 2.40 4.95 1.23 6.20 2.40 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specifications mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical components life support devices systems without express written approval STMicroelectronics. logo registered trademark STMicroelectronics other names property their respective owners 2004 STMicroelectronics Rights Reserved STMicroelectronics group companies Australia Belgium Brazil Canada China Czech Republic Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom United States America www.st.com
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STP16NK65Z STB16NK65Z-S
I2SPAK MECHANICAL DATA
MIN. 4.40 2.49 0.70 1.14 0.45 1.23 8.95 10.00 4.88 16.7 1.27 13.82 MAX. 4.60 2.69 0.93 1.70 0.60 1.36 9.35 10.40 5.28 17.5 14.42 MIN. 0.173 0.098 0.027 0.045 0.018 0.048 0.352 0.394 0.192 0.657 0.05 0.544 inch TYP. MAX. 0.181 0.106 0.037 0.067 0.024 0.053 0.368 0.409 0.208 0.689 0.055 0.568
DIM.
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STP16NK65Z STB16NK65Z-S
Table Revision History
Date 06-Aug-2004 02-Sep-2004 Revision First Release. Complete Version Description Changes
10/11
STP16NK65Z STB16NK65Z-S
Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specifications mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical components life support devices systems without express written approval STMicroelectronics. logo registered trademark STMicroelectronics other names property their respective owners 2004 STMicroelectronics Rights Reserved STMicroelectronics group companies Australia Belgium Brazil Canada China Czech Republic Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom United States America
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N-CHANNEL 650V 0.38 TO-220 I2SPAK Zener Protected SuperMESHMOSFET

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