N-CHANNEL 200V 0.65 DPAK STripFETMOSFET Table General Features
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STD5N20L
N-CHANNEL 200V 0.65 DPAK STripFETMOSFET
Table General Features
TYPE STD5N20L
Figure Package
VDSS
RDS(on)
TYPICAL RDS(on) 0.65 CONDUCTION LOSSES REDUCED INPUT CAPACIATNCE THRESHOLD DEVICE
DPAK
DESCRIPTION STD5N20L utilizes latest advanced design rules ST's proprietary STripFETtechnology. This suitable most demanding Motor Control lighting application.
Figure Internal Schematic Diagram APPLICATIONS MOTOR CONTROL LIGHTING
Table Order Codes
SALES TYPE STD5N20LT4 MARKING D5N20L PACKAGE DPAK PACKAGING TAPE REEL
Rev. September 2004
DATASHEET ACCORDING DSG-TRA/04/532
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Table Absolute Maximum ratings
Symbol VDGR PTOT Tstg Parameter Drain-source Voltage (VGS Drain-gate Voltage (RGS Gate- source Voltage Drain Current (continuous) 25°C Drain Current (continuous) 100°C Drain Current (pulsed) Total Dissipation 25°C Derating Factor Storage Temperature Operating Junction Temperature Value 0.27 Unit W/°C
Pulse width limited safe operating area
Table Thermal Data
Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature Soldering Purpose 3.75 °C/W °C/W
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table On/Off
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Test Conditions Min. ±100 0.65 Typ. Max. Unit
Rating Zero Gate Voltage Drain Current (VGS VDS= Rating, 125°C Gate-body Leakage Current (VDS Static Drain-source Resistance ±20V
Gate Threshold Voltage VGS, 50µA
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Table Dynamic
Symbol Ciss Coss Crss td(on) td(off) Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions 25V, MHz, Min. Typ. 11.5 21.5 15.5 Max. Unit
4.7, (Resistive Load Figure
Table Source Drain Diode
Symbol ISDM IRRM IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt A/µs, 25°C (see test circuit, Figure di/dt A/µs, 150°C (see test circuit, Figure Test Conditions Min. Typ. Max. Unit
Pulsed: Pulse duration duty cycle Starting Pulse width limited safe operating area
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Figure Safe Operating Area Figure Thermal Impedance
Figure Output Characteristics
Figure Transfer Characteristics
Figure Transconductance
Figure Static Drain-source Resistance
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Figure Gate Charge Gate-source Voltage Figure Capacitance Variations
Figure Normalized Gate Thereshold Voltage Temperature
Figure Normalized Resistance Temperature
Figure Source-Drain Diode Forward Characteristics
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Figure Switching Times Test Circuit Resistive Load Figure Gate Charge Test Circuit
Figure Test Circuit Inductive Load Switching Diode Recovery Times
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TO-252 (DPAK) MECHANICAL DATA
MIN. 0.60
DIM. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35
inch MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 1.00
TYP.
TYP.
MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398
0.024
0.039
P032P_B
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DPAK FOOTPRINT
TUBE SHIPMENT suffix)*
dimensions millimeters
dimensions millimeters
TAPE REEL SHIPMENT (suffix "T4")*
REEL MECHANICAL DATA
DIM. 12.8 20.2 16.4 22.4 18.4 13.2 MIN. MAX. 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK 2500 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM.
BASE 2500
MIN. 10.4 1.65 2.55
15.7 16.3
inch MIN. MAX. 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574
0.618 0.641
MAX. 10.6 12.1 1.85 2.75
sales type
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Table Revision History
Date 08-June-2004 20-Sep-2004 Revision Description Changes Stylesheet. Datasheet according DSG-TRA/04/532 Changes Table Figure
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Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specifications mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical components life support devices systems without express written approval STMicroelectronics. logo registered trademark STMicroelectronics other names property their respective owners 2004 STMicroelectronics Rights Reserved STMicroelectronics group companies Australia Belgium Brazil Canada China Czech Republic Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom United States America
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