IRLR8203PbF IRLU8203PbF HEXFET® Power MOSFET Applications Hi

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IRLR8203PbF IRLU8203PbF HEXFET® Power MOSFET Applications Hi

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95095A
IRLR8203PbF IRLU8203PbF
HEXFET® Power MOSFET
Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification Telecom Industrial High Frequency Buck Converters Computer Processor Power Lead-Free Benefits Ultra-Low Gate Impedance Very RDS(on) 4.5V Fully Characterized Avalanche Voltage Current
VDSS
RDS(on)
6.8m
110A
D-Pak IRLR8203PbF
I-Pak IRLU8203PbF
Absolute Maximum Ratings
Symbol
25°C 100°C 25°C 100°C TSTG
Parameter
Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction Storage Temperature Range
Max.
0.92
Units
W/°C
Thermal Resistance
Parameter
Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient
Typ.
Max.
1.09
Units
°C/W
When mounted square (FR-4 G-10 Material) recommended footprint soldering techniques refer application note #AN-994
Notes through page
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12/06/04
IRLR/U8203PbF
Static 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. Typ. Max. Units Conditions 250µA 0.027 V/°C Reference 25°C, 10V, Static Drain-to-Source On-Resistance 4.5V, Gate Threshold Voltage VGS, 250µA 24V, Drain-to-Source Leakage Current 24V, 125°C Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage -200 -20V
Dynamic 25°C (unless otherwise specified)
Symbol
Qoss td(on) td(off) Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. 2430 1200 Max. Units Conditions 15V, 4.5V 4.5V 1.0MHz
Avalanche Characteristics
Symbol
Parameter
Single Pulse Avalanche Energy Avalanche Current
Typ.
Max.
Units
Diode Characteristics
Symbol
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge
Min. Typ. Max. Units 0.75 0.65
Conditions MOSFET symbol showing integral reverse junction diode. 25°C, 12A, 125°C, 12A, 25°C, 12A, VR=15V di/dt 100A/µs 125°C, 12A, VR=15V di/dt 100A/µs
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IRLR/U8203PbF
1000
4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V
1000
Drain-to-Source Current
Drain-to-Source Current
4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V
2.5V
2.5V
20µs PULSE WIDTH 25°C
20µs PULSE WIDTH 175°C
VDS, Drain-to-Source Voltage
VDS, Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
1000.00
Drain-to-Source Current
RDS(on) Drain-to-Source Resistance
100.00
25°C
(Normalized)
175°C
10.00
20µs PULSE WIDTH
VGS, Gate-to-Source Voltage
Junction Temperature
Typical Transfer Characteristics
Normalized On-Resistance Temperature
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IRLR/U8203PbF
10000 Ciss Cgd, SHORTED Crss Coss
Gate-to-Source Voltage
Capacitance(pF)
Ciss Coss
1000
Crss
VDS, Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000
1000 OPERATION THIS AREA LIMITED DS(on)
Drain-to-Source Current
Reverse Drain Current
100µsec
25°C 175°C Single Pulse
1msec 10msec
,Source-to-Drain Voltage
1000
Drain-toSource Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRLR/U8203PbF
LIMITED PACKAGE
D.U.T.
-VDD
Drain Current
4.5V
Pulse Width Duty Factor
10a. Switching Time Test Circuit
Case Temperature
Maximum Drain Current Case Temperature
td(on) d(off)
10b. Switching Time Waveforms
thJC
0.50
Thermal Response
0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak 0.01 0.00001 0.0001 0.001 0.01
thJC
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRLR/U8203PbF
D.U.T
Single Pulse Avalanche Energy (mJ)
DRIVER
BOTTOM
0.01
12a. Unclamped Inductive Test Circuit
V(BR)DSS
Starting Junction Temperature
12c. Maximum Avalanche Energy Drain Current
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
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IRLR/U8203PbF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
Circuit Layout Considerations Stray Inductance Ground Plane Leakage Inductance Current Transformer
dv/dt controlled Driver same type D.U.T. controlled Duty Factor D.U.T. Device Under Test
Driver Gate Drive P.W. Period
P.W. Period VGS=10V
D.U.T. Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple
Logic Level Devices N-Channel HEXFET® Power MOSFETs
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IRLR/U8203PbF
D-Pak (TO-252AA) Package Outline
Dimensions shown millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: IRFR120 WITH EMBLY CODE 1234 EMBLED 1999 EMBLY LINE Note: sembly line ition indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO EMBLY CODE PART NUMBER
IRFU120 916A
CODE YEAR 1999 WEEK LINE
ERNAT IONAL RECT IFIER LOGO EMBLY CODE PART NUMBER
IRFU120
DATE CODE IGNAT LEAD-FREE PRODUCT (OPT IONAL) YEAR 1999 WEEK EMBLY CODE
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IRLR/U8203PbF
I-Pak (TO-251AA) Package Outline
Dimensions shown millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
EXAMPLE: IRFU120 EMBLY CODE 5678 EMBLED 1999 EMBLY LINE Note: assembly line position indicates "Lead-Free" ERNAT IONAL RECT IFIER LOGO EMBLY CODE PART NUMBER
U120 919A
CODE YEAR 1999 WEEK LINE
ERNAT IONAL RECT IFIER LOGO EMBLY CODE PART NUMBER
IRFU120
CODE IGNAT LEAD-FREE PRODUCT (OPTIONAL) YEAR 1999 WEEK EMBLY CODE
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IRLR/U8203PbF
D-Pak (TO-252AA) Tape Reel Information
Dimensions shown millimeters (inches)
16.3 .641 15.7 .619
16.3 .641 15.7 .619
12.1 .476 11.9 .469
FEED DIRECTION
.318 .312
FEED DIRECTION
NOTES CONTROLLING DIMENSION MILLIMETER. DIMENSIONS SHOWN MILLIMETERS INCHES OUTLINE CONFORMS EIA-481 EIA-541.
INCH
NOTES OUTLINE CONFORMS EIA-481.
Notes:
Repetitive rating; pulse width limited
max. junction temperature.
Pulse width 400µs; duty cycle Calculated continuous current based maximum allowable
junction temperature. Package limitation current 30A.
Starting 25°C, 0.68mH
30A.
Data specifications subject change without notice. This product been designed qualified Industrial market. Qualification Standards found IR's site.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information.12/04
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IRLR8203PbF IRLU8203PbF HEXFET® Power MOSFET Applications Hi

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