N-CHANNEL 250V 0.033 TO-247 Zener-Protected SuperMESHMOSFET Table
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STW52NK25Z
N-CHANNEL 250V 0.033 TO-247 Zener-Protected SuperMESHMOSFET
Table General Features
TYPE STW52NK25Z
Figure Package
VDSS
RDS(on) 0.045
TYPICAL RDS(on) 0.033 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY
TO-247
DESCRIPTION SuperMESHseries obtained through extreme optimization ST's well established strip-based PowerMESHlayout. addition pushing on-resistance significantly down, special care taken ensure very good dv/dt capability most demanding applications. Such series complements full range high voltage MOSFETs including revolutionary MDmeshproducts. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING CHOPPERs IDEAL OFF-LINE POWER SUPPLIES, ADAPTORS
Figure Internal Schematic Diagram
Table Order Codes
SALES TYPE STW52NK25Z MARKING W52NK25Z PACKAGE TO-247 PACKAGING TUBE
Rev. November 2004 1/10
STW52NK25Z
Table Absolute Maximum ratings
Symbol VDGR PTOT VESD(G-S) dv/dt Tstg Parameter Drain-source Voltage (VGS Drain-gate Voltage (RGS Gate- source Voltage Drain Current (continuous) 25°C Drain Current (continuous) 100°C Drain Current (pulsed) Total Dissipation 25°C Derating Factor Gate source ESD(HBM-C=100pF, R=1.5K) Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature Value 32.76 2.38 6000 Unit W/°C V/ns
Pulse width limited safe operating area 52A, di/dt 200A/µs, V(BR)DSS, TJMAX.
Table Thermal Data
Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature Soldering Purpose 0.42 °C/W °C/W
Table Avalanche Characteristics
Symbol Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting IAR, Value Unit
Table GATE-SOURCE ZENER DIODE
Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs=± (Open Drain) Min. Typ. Max. Unit
PROTECTION FEATURES GATE-TO-SOURCE ZENER DIODES built-in back-to-back Zener diodes have specifically been designed enhance only device's capability, also make them safely absorb possible voltage transients that occasionally applied from gate source. this respect Zener voltage appropriate achieve efficient cost-effective intervention protect device's integrity. These integrated Zener diodes thus avoid usage external components.
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STW52NK25Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table On/Off
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS Gate-body Leakage Current (VDS Gate Threshold Voltage Static Drain-source Resistance Test Conditions Rating Rating, VGS, 10V, 3.75 0.033 Min. 0.045 Typ. Max. Unit
Table Dynamic
Symbol Ciss Coss Crss Coss td(on) td(off) Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions 25V, MHz, Min. Typ. 4850 Max. Unit
125V, (see Figure
Table Source Drain Diode
Symbol ISDM IRRM IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt 100A/µs 25°C (see Figure di/dt 100A/µs 150°C (see Figure 0.285 0.37 Test Conditions Min. Typ. Max. Unit
Note: Pulsed: Pulse duration duty cycle Pulse width limited safe operating area. Coss defined constant equivalent capacitance giving same charging time Coss when increases from VDSS.
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STW52NK25Z
Figure Safe Operating Area Figure Thermal Impedance
Figure Output Characteristics
Figure Transfer Characteristics
Figure Transconductance
Figure Static Drain-source Resistance
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Figure Gate Charge Gate-source Voltage Figure Capacitance Variations
Figure Normalized Gate Thereshold Voltage Temperature
Figure Normalized Resistance Temperature
Figure Source-Drain Diode Forward Characteristics
Figure Normalized BVdss Temperature
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STW52NK25Z
Figure Avalanche Energy Starting
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STW52NK25Z
Figure Unclamped Inductive Load Test Circuit Figure Unclamped Inductive Wafeform
Figure Switching Times Test Circuit Resistive Load
Figure Gate Charge Test Circuit
Figure Test Circuit Inductive Load Switching Diode Recovery Times
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STW52NK25Z
TO-247 MECHANICAL DATA
MIN. 4.85 2.20 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620
DIM.
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STW52NK25Z
Table Revision History
Date 29-Oct-2004 22-Nov-2004 Revision First Relase Final datasheet Description Changes
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STW52NK25Z
Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specifications mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical components life support devices systems without express written approval STMicroelectronics. logo registered trademark STMicroelectronics other names property their respective owners 2004 STMicroelectronics Rights Reserved STMicroelectronics group companies Australia Belgium Brazil Canada China Czech Republic Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom United States America
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