IRFIZ48NPbF Advanced Process Technology Isolated Package High Vol

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IRFIZ48NPbF Advanced Process Technology Isolated Package High Vol

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-94835
IRFIZ48NPbF
Advanced Process Technology Isolated Package High Voltage Isolation 2.5KVRMS Sink Lead Creepage Dist. 4.8mm Fully Avalanche Rated Lead-Free
HEXFET® Power MOSFET VDSS RDS(on) 0.016
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques achieve extremely on-resistance silicon area. This benefit, combined with fast switching speed ruggedized device design that HEXFET Power MOSFETs well known for, provides designer with extremely efficient reliable device wide variety applications. TO-220 Fullpak eliminates need additional insulating hardware commercial-industrial applications. moulding compound used provides high isolation capability thermal resistance between external heatsink. This isolation equivalent using micron mica barrier with standard TO-220 product. Fullpak mounted heatsink using single clip single screw fixing. Parameter
25°C 100°C 25°C dv/dt TSTG Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Soldering Temperature, seconds Mounting torque, 6-32 srew
TO-220 FULLP
Absolute Maximum Ratings
Max.
0.36 (1.6mm from case lbfin (1.1Nm)
Units
W/°C V/ns
Thermal Resistance
Parameter
Junction-to-Case Junction-to-Ambient
Typ.
Max.
Units
°C/W
11/13/03
IRFIZ48NPbF
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain Sink Capacitance
Min.
Typ. 0.052 1900
Max. Units Conditions 250µA V/°C Reference 25°C, 0.016 10V, VGS, 250µA 25V, 55V, 44V, 150°C -100 -20V 10V, Fig. 0.85, Fig. Between lead, (0.25in.) from package center contact 1.0MHz, Fig. 1.0MHz
Source-Drain Ratings Characteristics
Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units
Conditions MOSFET symbol showing integral reverse junction diode. 25°C, 22A, 25°C, di/dt 100A/µs
Repetitive rating; pulse width limited
max. junction temperature. fig.
Pulse width 300µs; duty cycle t=60s, =60Hz
Uses IRFZ48N data test conditions
25V, starting 25°C, 530µH
32A. (See Figure
32A, di/dt 250A/µs, V(BR)DSS,
175°C
IRFIZ48NPbF
1000
8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
1000
Drain-to-Source Current
Drain-to-Source Current
8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
4.5V
4.5V
20µs PULSE WIDTH 25°C
20µs PULSE WIDTH 175°C
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
1000
DS(on) Drain-to-Source Resistance (Normalized)
Drain-to-Source Current
175°C
25°C
20µs PULSE WIDTH
Gate-to-Source Voltage
Junction Temperature (°C)
Typical Transfer Characteristics
Normalized On-Resistance Temperature
IRFIZ48NPbF
4000
Capacitance (pF)
3000
Ciss
2000
Coss
Gate-to-Source Voltage
1MHz SHORTED
1000
Crss
TEST CIRCUIT FIGURE
Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000
1000
Reverse Drain Current
OPERATION THIS AREA LIMITED RDS(on)
175°C
Drain Current
10us
100us
25°C
10ms
Single Pulse
Source-to-Drain Voltage
Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
IRFIZ48NPbF
D.U.T.
Drain Current
Pulse Width Duty Factor
10a. Switching Time Test Circuit
Case Temperature
td(on) d(off)
Maximum Drain Current Case Temperature
10b. Switching Time Waveforms
Thermal Response thJC
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJC 0.001 0.01
0.01 0.00001
0.0001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRFIZ48NPbF
Single Pulse Avalanche Energy (mJ)
BOTTOM
DRIVER
D.U.T
0.01
12a. Unclamped Inductive Test Circuit
V(BR)DSS
Starting Junction Temperature (°C)
12c. Maximum Avalanche Energy Drain Current
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
IRFIZ48NPbF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
Circuit Layout Considerations Stray Inductance Ground Plane Leakage Inductance Current Transformer
dv/dt controlled Driver same type D.U.T. controlled Duty Factor D.U.T. Device Under Test
Driver Gate Drive P.W. Period
P.W. Period VGS=10V
D.U.T. Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple
Logic Level Devices N-Channel HEXFETS
IRFIZ48NPbF
TO-220 Full-Pak Package Outline
TO-220 Full-Pak Part Marking Information
XAMP CODE 3432 1999 IONAL CODE
Note: assembly line position indicates "Lead-Free"
1999
Data specifications subject change without notice.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information.11/03

IRFIZ48NPbF Advanced Process Technology Isolated Package High Vol

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