IRFR3711ZPbF IRFU3711ZPbF Applications High Frequency Synchronous

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

IRFR3711ZPbF IRFU3711ZPbF Applications High Frequency Synchronous

Datasheet Thumbnail

Top Searches for this datasheet

95074A
IRFR3711ZPbF IRFU3711ZPbF
Applications High Frequency Synchronous Buck Converters Computer Processor Power High Frequency Isolated DC-DC Converters with Synchronous Rectification Telecom Industrial Lead-Free Benefits
HEXFET® Power MOSFET
VDSS
RDS(on)
5.7m:
18nC
Very RDS(on) 4.5V Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage Current
D-Pak IRFR3711Z
I-Pak IRFU3711Z
Absolute Maximum Ratings
Parameter
25°C 100°C 25°C 100°C TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current
Max.
Units
Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction Storage Temperature Range
0.53 W/°C
Soldering Temperature, seconds
(1.6mm from case)
Thermal Resistance
Parameter
Junction-to-Case Junction-to-Ambient (PCB Mount) Junction-to-Ambient
Typ.
Max.
Units
°C/W
Notes through page
www.irf.com
12/13/04
IRFR/U3711ZPbF
Static 25°C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS Qgs1 Qgs2 Qgodr Qoss td(on) td(off) Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 Qgd) Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. Typ. Max. Units
1.55 -5.4 2160 2.45 -100 4.5V mV/°C
Conditions
250µA
mV/°C Reference 25°C, 10V, 4.5V,
VGS, 250µA 16V, 16V, 125°C -20V 10V,
Fig. 10V, 15V, 4.5V Clamped Inductive Load
1.0MHz
Avalanche Characteristics
Parameter Single Pulse Avalanche Energy Avalanche Current
Typ.
Max.
Units
Repetitive Avalanche Energy
Diode Characteristics
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol showing integral reverse junction diode. 25°C, 12A, 25°C, 12A, di/dt 100A/µs
Intrinsic turn-on time negligible (turn-on dominated LS+LD)
www.irf.com
IRFR/U3711ZPbF
1000
4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V
1000
4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V
Drain-to-Source Current
Drain-to-Source Current
2.5V
2.5V 20µs PULSE WIDTH 25°C
20µs PULSE WIDTH 175°C
VDS, Drain-to-Source Voltage
VDS, Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
1000
RDS(on) Drain-to-Source Resistance
Drain-to-Source Current
25°C 175°C
(Normalized)
20µs PULSE WIDTH
Gate-to-Source Voltage
Junction Temperature (°C)
Typical Transfer Characteristics
Normalized On-Resistance Temperature
www.irf.com
IRFR/U3711ZPbF
10000 Ciss Cgd, Crss Coss
SHORTED
Ciss
Gate-to-Source Voltage
VDS= VDS=
Capacitance (pF)
1000
Coss Crss
VDS, Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000.0
1000
OPERATION THIS AREA LIMITED DS(on)
ISD, Reverse Drain Current
100.0 175°C 10.0
Drain-to-Source Current
100µsec
1msec 25°C 175°C Single Pulse 10.0
25°C
10msec
VSD, Source-toDrain Voltage
100.0
1000.0
Drain-toSource Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
www.irf.com
IRFR/U3711ZPbF
LIMITED PACKAGE
Drain Current
VGS(th) Gate threshold Voltage
250µA
Case Temperature (°C)
Temperature
Maximum Drain Current Case Temperature
Threshold Voltage Temperature
Thermal Response thJC
0.50 0.20 0.10
0.05 0.02 0.01
(°C/W) (sec) 0.805 0.000237 0.606 0.001005 0.492 0.101628
0.01
i/Ri i/Ri
SINGLE PULSE THERMAL RESPONSE
Notes: Duty Factor t1/t2 Peak Zthjc
0.001 0.01
0.001 1E-006 1E-005 0.0001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
IRFR/U3711ZPbF
EAS, Single Pulse Avalanche Energy (mJ)
DRIVER
7.7A 8.9A BOTTOM
D.U.T
0.01
12a. Unclamped Inductive Test Circuit
V(BR)DSS
Starting Junction Temperature (°C)
12c. Maximum Avalanche Energy Drain Current
12b. Unclamped Inductive Waveforms
D.U.T
Current Regulator Same Type D.U.T.
Pulse Width Duty Factor 0.1%
.2µF .3µF
14a. Switching Time Test Circuit
D.U.T.
td(on) td(off)
Current Sampling Resistors
Gate Charge Test Circuit
14b. Switching Time Waveforms
www.irf.com
IRFR/U3711ZPbF
D.U.T
Driver Gate Drive
P.W.
Period
P.W. Period VGS=10V
Circuit Layout Considerations Stray Inductance Ground Plane Leakage Inductance Current Transformer
D.U.T. Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt
dv/dt controlled Driver same type D.U.T. controlled Duty Factor D.U.T. Device Under Test
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple
Logic Level Devices Peak Diode Recovery dv/dt Test Circuit N-Channel HEXFET® Power MOSFETs
Vgs(th)
Qgs1 Qgs2
Qgodr
Gate Charge Waveform
www.irf.com
IRFR/U3711ZPbF
Power MOSFET Selection Non-Isolated DC/DC Converters
Control Special attention been given power losses switching elements circuit Power losses high side switch also called Control FET, impacted Rds(on) MOSFET, these conduction losses only about half total losses. Power losses control switch given Synchronous power loss equation approximated
Ploss Pconduction Poutput drive
Ploss Irms Rds(on)
Ploss Pconduction+ Pswitching+ Pdrive+ Poutput
This expanded approximated
(Qrr
*dissipated primarily
Ploss (Irms Rds(on Qoss
This simplified loss equation includes terms Qgs2 Qoss which Power MOSFET data sheets. Qgs2 element traditional gate-source charge that included MOSFET data sheets. importance splitting this gate-source charge into elements, Qgs1 Qgs2, seen from Qgs2 indicates charge that must supplied gate driver between time that threshold voltage been reached time drain current rises Idmax which time drain voltage begins change. Minimizing critical factor reducing switching losses Qoss charge that must supplied output capacitance MOSFET during every switching cycle. Figure shows Qoss formed parallel combination voltage dependant (nonlinear) capacitances when multiplied power supply input buss voltage.
synchronous MOSFET Rds(on) important characteristic; however, once again importance gate charge must overlooked since impacts three critical areas. Under light load MOSFET must still turned control gate drive losses become much more significant. Secondly, output charge Qoss reverse recovery charge both generate losses that transfered increase dissipation that device. Thirdly, gate charge will impact MOSFETs' susceptibility Cdv/dt turn drain connected switching node converter therefore sees transitions between ground Vin. turns there rate change drain voltage dV/dt which capacitively coupled gate induce voltage spike gate that sufficient turn MOSFET resulting shoot-through current ratio Qgd/Qgs1 must minimized reduce potential Cdv/dt turn
Figure Qoss Characteristic
www.irf.com
IRFR/U3711ZPbF
D-Pak (TO-252AA) Package Outline
Dimensions shown millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: R120 WITH SEMB CODE 1234 ASSEMBLED 1999 EMBLY LINE Note: embly line position indicates "Lead-Free" PART NUMBER INTE RNATIONAL RECTIFIER LOGO
IRFU120 916A
EMBLY CODE
DATE CODE YEAR 1999 LINE
PART NUMBER INTE RNATIONAL RECTIFIER LOGO
IRFU120
DATE CODE DESIGNAT LEAD-F PRODUCT (OPTIONAL) YEAR 1999 EMBLY CODE
EMBLY CODE
www.irf.com
IRFR/U3711ZPbF
I-Pak (TO-251AA) Package Outline
Dimensions shown millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
EXAMPLE: IRFU120 ASSEMBLY CODE 5678 ASSE MBLE 1999 ASSEMBLY LINE Note: embly line ition indicates "Lead-Free" PART NUMBER INTE RNAT IONAL RECT LOGO
IRFU120 919A
ASSEMBLY CODE
CODE YEAR 1999 WEEK LINE
PART NUMBE ERNAT IONAL RECTIF LOGO
IRFU120
SEMBLY CODE
DATE CODE IGNAT LEAD-F PRODUCT (OPTIONAL) YEAR 1999 EMBLY CODE
www.irf.com
IRFR/U3711ZPbF
D-Pak (TO-252AA) Tape Reel Information
Dimensions shown millimeters (inches)
16.3 .641 15.7 .619
16.3 .641 15.7 .619
12.1 .476 11.9 .469
FEED DIRECTION
.318 .312
FEED DIRECTION
NOTES CONTROLLING DIMENSION MILLIMETER. DIMENSIONS SHOWN MILLIMETERS INCHES OUTLINE CONFORMS EIA-481 EIA-541.
INCH
NOTES OUTLINE CONFORMS EIA-481.
Notes:
Repetitive rating; pulse width limited
max. junction temperature. Starting 25°C, 1.9mH, 12A. Pulse width 400µs; duty cycle
Calculated continuous current based maximum allowable
junction temperature. Package limitation current 30A.
When mounted square (FR-4 G-10 Material).
recommended footprint soldering techniques refer application note #AN-994.
Data specifications subject change without notice. This product been designed qualified Industrial market. Qualification Standards found IR's site.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information.12/04
www.irf.com

IRFR3711ZPbF IRFU3711ZPbF Applications High Frequency Synchronous

Top Searches for this datasheet

Other recent searches