AUTOMOTIVE MOSFET Relay replacement Anti-lock Braking System
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94803A
AUTOMOTIVE MOSFET
Relay replacement Anti-lock Braking System
HEXFET® Power MOSFET
IRF7484Q
VDSS RDS(on) (mW)
10@VGS 7.0V
Benefits
Advanced Process Technology Ultra On-Resistance Fast Switching Repetitive Avalanche Allowed Tjmax
Description
Specifically designed Automotive applications, this Stripe Planar design HEXFET® Power MOSFETs utilizes latest processing techniques achieve extremely on-resistance silicon area. Additional features this HEXFET power MOSFET 150°C junction operating temperature, fast switching speed improved repetitive avalanche rating. These benefits combine make this design extremely efficient reliable device Automotive applications wide variety other applications.
View
SO-8
Absolute Maximum Ratings
Parameter
25°C 70°C 25°C TSTG Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Junction Storage Temperature Range
Max.
0.02 Fig.16c, 16d,
Units
W/°C
Thermal Resistance
Symbol
Parameter
Junction-to-Drain Lead Junction-to-Ambient
Typ.
Max.
Units
°C/W
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01/04/05
IRF7484Q
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min.
Typ. 0.040 3520
Max. Units Conditions 250µA V/°C Reference 25°C, 7.0V, VGS, 250µA 10V, 40V, 32V, 125°C 8.0V -200 -8.0V 7.0V 1.0A 7.0V 1.0MHz
Source-Drain Ratings Characteristics
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units
Conditions MOSFET symbol showing integral reverse junction diode. 25°C, 2.3A, 25°C, 2.3A di/dt 100A/µs
Notes:
Repetitive rating; pulse width limited
max. junction temperature. Pulse width 400µs; duty cycle Surface mounted square board. Starting 25°C, 2.3mH, 14A. (See Figure 12).
14A, di/dt 140A/µs, V(BR)DSS, Limited TJmax Fig.16c, 16d, typical repetitive
avalanche performance. 150°C.
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IRF7484Q
100000 10000 1000 0.01
7.5V 7.0V 4.5V 3.0V 2.5V 2.3V 2.0V BOTTOM 1.8V
10000
Drain-to-Source Current
Drain-to-Source Current
1000
7.5V 7.0V 4.5V 3.0V 2.5V 2.3V 2.0V BOTTOM 1.8V
1.8V
1.8V 20µs PULSE WIDTH 25°C
20µs PULSE WIDTH 150°C
VDS, Drain-to-Source Voltage
VDS, Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
1000.00
Drain-to-Source Current
DS(on) Drain-to-Source Resistance
100.00
10.00
150°C
(Normalized)
1.00
25°C 20µs PULSE WIDTH
0.10
VGS, Gate-to-Source Voltage
Junction Temperature
Typical Transfer Characteristics
Normalized On-Resistance Temperature
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IRF7484Q
100000 Ciss Cgd, SHORTED Crss Coss
Gate-to-Source Voltage
10000
Capacitance(pF)
Ciss
1000
Coss
Crss
VDS, Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000
1000
OPERATION THIS AREA LIMITED DS(on)
150°C 25°C 0.10 VSD, Source-to-Drain Voltage
Drain-to-Source Current
ISD, Reverse Drain Current
100µsec 1msec 10msec 25°C 150°C Single Pulse 1000
Drain-toSource Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRF7484Q
D.U.T.
Drain Current
Pulse Width Duty Factor
10a. Switching Time Test Circuit
Case Temperature
Maximum Drain Current Case Temperature
td(on) d(off)
10b. Switching Time Waveforms
thJA
0.50
0.20 0.10
Thermal Response
0.05 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak 0.0001 0.001 0.01
thJA
0.02 0.01
Rectangular Pulse Duration (sec)
Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7484Q
RDS(on) Drain-to -Source Resistance
16.0 15.0 14.0 13.0 12.0 11.0 10.0
(on) Drain-to-Source Resistance
9.40 9.30 9.20 9.10 9.00 8.90 8.80 8.70 8.60 Drain Current 7.0V
VGS, Gate -Source Voltage
Typical On-Resistance Gate Voltage
Typical On-Resistance Drain Current
VGS(th) Gate threshold Voltage
Power
250µA
1.00 10.00 100.00 1000.00
Temperature
Time (sec)
Typical Threshold Voltage Junction Temperature
Typical Power Time
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IRF7484Q
6.3A
BOTTOM
Single Pulse Avalanche Energy (mJ)
DRIVER
D.U.T
0.01
16c. Unclamped Inductive Test Circuit
Starting Junction Temperature
16a. Maximum Avalanche Energy Drain Current
V(BR)DSS
16d. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Current Sampling Resistors
Charge
Gate Charge Test Circuit
Basic Gate Charge Waveform
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IRF7484Q
Duty Cycle Single Pulse
Avalanche Current
0.01
Allowed avalanche Current avalanche pulsewidth, assuming 25°C avalanche losses
0.05 0.10
0.01 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
(sec)
Typical Avalanche Current Vs.Pulsewidth
Avalanche Energy (mJ)
Single Pulse BOTTOM Duty Cycle
Starting Junction Temperature (°C)
Notes Repetitive Avalanche Curves Figures (For further info, AN-1005 www.irf.com) Avalanche failures assumption: Purely thermal phenomenon failure occurs temperature excess Tjmax. This validated every part type. Safe operation Avalanche allowed long asTjmax exceeded. Equation below based circuit waveforms shown Figures 12a, 12b. (ave) Average power dissipation single avalanche pulse. Rated breakdown voltage (1.3 factor accounts voltage increase during avalanche). Allowable avalanche current. Allowable rise junction temperature, exceed Tjmax (assumed 25°C Figure 16). Average time avalanche. Duty cycle avalanche ZthJC(D, Transient thermal resistance, figure (ave) ZthJC 2DT/ (AR) (ave)
Maximum Avalanche Energy Temperature
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IRF7484Q
SO-8 Package Details
DI8C@T HDGGDH@U@ST
!!'#
IPU@T)
APPUQSDIU
SO-8 Part Marking
DIU@SI6UDPI6G S@8UDAD@S GPBP
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;;;;
IRF7484Q
SO-8 Tape Reel
TERMINAL NUMBER
12.3 .484 11.7 .461
.318 .312
FEED DIRECTION
NOTES: CONTROLLING DIMENSION MILLIMETER. DIMENSIONS SHOWN MILLIMETERS(INCHES). OUTLINE CONFORMS EIA-481 EIA-541.
330.00 (12.992) MAX.
14.40 .566 12.40 .488 NOTES CONTROLLING DIMENSION MILLIMETER. OUTLINE CONFORMS EIA-481 EIA-541.
Data specifications subject change without notice. This product been designed qualified Automotive [Q101] market. Qualification Standards found IR's site.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. 01/05
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