Designer's SWITCHMODE trademarks Motorola, Inc. Pulse Test: Pulse Widt

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Designer's SWITCHMODE trademarks Motorola, Inc. Pulse Test: Pulse Widt

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Inductive Fall Time 25_C (Typ) Inductive Storage Time 25_C (Typ) Operating Temperature Range 200_C MJ10007 Darlington transistor designed high-voltage, high-speed, power switching inductive circuits where fall time critical. particularly suited line operated switchmode applications such Switching Regulators Inverters Solenoid Relay Drivers Motor Controls Deflection Circuits Fast Turn-Off Times 100_C Performance Specified for: Reversed Biased with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Currents
Designer's SWITCHMODE trademarks Motorola, Inc. Pulse Test: Pulse Width Duty Cycle
Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data
Designer's Data "Worst Case" Conditions Designer's Data Sheet permits design most circuits entirely from information presented. Limit curves representing boundaries device characteristics given facilitate "worst case" design.
SWITCHMODE Series Silicon Power Darlington Transistors with Base-Emitter Speedup Diode
Designer's
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
Preferred devices Motorola recommended choices future best overall value.
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
Maximum Lead Temperature Soldering Purposes from Case Seconds Thermal Resistance, Junction Case Operating Storage Junction Temperature Range Total Power Dissipation 25_C 100_C Derate above 25_C Base Current Continuous Peak Collector Current Continuous Peak Emitter Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Collector-Emitter Voltage
Data Sheet
Characteristic
Rating
10%.
Symbol
Symbol
Tstg
VCEO
VCEV
VCEX
AMPERE SILICON POWER DARLINGTON TRANSISTORS VOLTS WATTS
MJ10007
*Motorola Preferred Device
Value
1.17
0.86
Order this document MJ10007/D
CASE 1-07 TO-204AA (TO-3)
Watts
_C/W
W/_C
Unit
Unit
MJ10007
internal Collector-to-Emitter diode eliminate need external diode clamp inductive loads. Tests have shown that Forward Recovery Voltage (Vf) this diode comparable that typical fast recovery rectifiers. Pulse Test: Duty Cycle SWITCHING CHARACTERISTICS DYNAMIC CHARACTERISTICS CHARACTERISTICS SECOND BREAKDOWN CHARACTERISTICS
ELECTRICAL CHARACTERISTICS 25_C unless otherwise noted)
Crossover Time
Storage Time
Crossover Time
Storage Time
Inductive Load Clamped (Table
Fall Time
Storage Time
Rise Time
Delay Time
Resistive Load (Table
Output Capacitance (VCB Vdc, ftest kHz)
Small Signal Current Gain Adc, Vdc, ftest MHz)
Diode Forward Voltage Adc)
Base-Emitter Saturation Voltage Adc, mAdc) Adc, mAdc, 100_C)
Collector Emitter Saturation Voltage Adc, mAdc) Adc, Adc) Adc, mAdc, 100_C)
Current Gain Adc, Vdc) Adc, Vdc)
Second Breakdown Collector Current with base forward biased
Emitter Cutoff Current (VEB Vdc,
Collector Cutoff Current (VCE Rated VCEV, 100_C)
Collector Cutoff Current (VCEV Rated Value, VBE(off) Vdc) (VCEV Rated Value, VBE(off) Vdc, 150_C)
Collector-Emitter Sustaining Voltage (Table Figure Vclamp Rated VCEX, 100_C) Vclamp Rated VCEX, 100_C)
Collector-Emitter Sustaining Voltage (Table Vclamp Rated VCEO)
A(pk), Vclamp Rated VCEX, VBE(off) Vdc, 25_C) A(pk), Vclamp Rated VCEX, VBE(off) Vdc, 100_C) (VCC Vdc, VBE(off) Vdc, Duty Cycle 2.0%) Characteristic
VCEO(sus)
VCEX(sus)
VCE(sat)
VBE(sat)
Symbol
Motorola Bipolar Power Transistor Device Data
IEBO ICER ICEV IS/b 0.06 0.25 0.05 Figure 0.25 mAdc mAdc mAdc Unit
MJ10007
TYPICAL CHARACTERISTICS
hFE, CURRENT GAIN COLLECTOR-EMITTER VOLTAGE (VOLTS) BASE CURRENT (mA) 25°C
150°C
25°C
55°C
COLLECTOR CURRENT (AMP)
Figure Current Gain
Figure Collector Saturation Region
CE(sat) COLLECTOR-EMITTER SATURATION VOLTAGE (VOLTS)
IC/IB VBE, BASE-EMITTER VOLTAGE (VOLTS)
VBE(sat) IC/IB VBE(on) 55°C 25°C 25°C 150°C COLLECTOR CURRENT (AMP)
55°C 25°C 150°C COLLECTOR CURRENT (AMP)
Figure Collector-Emitter Saturation Voltage
Figure Base-Emitter Voltage
125°C 100°C REVERSE 25°C 10-1 75°C OUTPUT CAPACITANCE (pF) COLLECTOR CURRENT
25°C
FORWARD
1000
VBE, BASE-EMITTER VOLTAGE (VOLTS)
REVERSE VOLTAGE (VOLTS)
Figure Collector Cutoff Region
Figure Output Capacitance
Motorola Bipolar Power Transistor Device Data
MJ10007
Table Test Conditions Dynamic Performance
VCEO(sus) VCEX(sus) INDUCTIVE SWITCHING
INDUCTIVE TEST CIRCUIT INPUT ABOVE DETAILED CONDITIONS Rcoil Lcoil
RESISTIVE SWITCHING
INPUT CONDITIONS
1N4937 EQUIVALENT Vclamp
Varied Attain
Lcoil Rcoil Vclamp VCEO(sus)
Lcoil Rcoil 0.05
CIRCUIT VALUES
Vclamp Rated VCEX Value
Pulse Width
INDUCTIVE TEST CIRCUIT
OUTPUT WAVEFORMS
RESISTIVE TEST CIRCUIT
TEST CIRCUITS
INPUT ABOVE DETAILED CONDITIONS
1N4937 EQUIVALENT Vclamp
Rcoil Lcoil
IC(pk)
UNCLAMPED
Adjusted Obtain Lcoil Lcoil VClamp
CLAMPED Vclamp TIME
Test Equipment Scope Tektronix Equivalent
SWITCHING TIMES NOTE
Vclamp Vclamp Vclamp Vclamp
resistive switching circuits, rise, fall, storage times have been defined apply both current voltage waveforms since they phase. However, inductive loads which common SWITCHMODE power supplies hammer drivers, current voltage waveforms phase. Therefore, separate measurements must made each waveform determine total switching time. this reason, following terms have been defined. Voltage Storage Time, Vclamp Voltage Rise Time, Vclamp Current Fall Time, Current Tail, Crossover Time, Vclamp enlarged portion turn-off waveforms shown Figure visual identity these terms.
TIME
Figure Inductive Switching Measurements
Motorola Bipolar Power Transistor Device Data
SWITCHING TIMES NOTE (continued)
designer, there minimal switching loss during storage time predominant switching power losses occur during crossover interval obtained using standard equation from AN-222. PSWT (tc)
general, However, lower test currents this relationship valid. common with most switching transistors, resistive switching specified 25_C become benchmark designers. However, designers high frequency converter circuits, user oriented specifications which make this "SWITCHMODE" transistor inductive switching speeds tsv) which guaranteed 100_C.
MJ10007
RESISTIVE SWITCHING PERFORMANCE
0.07 0.05 0.03 0.02 0.01 25°C TIME 0.07 0.05 VBE(off) 25°C
TIME
COLLECTOR CURRENT (AMP)
COLLECTOR CURRENT (AMP)
Figure Turn-On Time
Figure Turn-Off Time
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED)
0.07 0.05 0.03 0.02
0.05 0.02 0.01 SINGLE PULSE 0.02 0.03 0.05 P(pk) r(t) 1.17°C/W CURVES APPLY POWER PULSE TRAIN SHOWN READ TIME TJ(pk) P(pk) RJC(t) DUTY CYCLE, t1/t2 TIME (ms) 1000
0.01 0.01
Figure Thermal Response
Motorola Bipolar Power Transistor Device Data
MJ10007
Safe Operating Area figures shown Figures specified ratings these devices under test conditions shown. COLLECTOR CURRENT (AMPS) 0.05 0.02 MJ10007 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
SAFE OPERATING AREA INFORMATION
FORWARD BIAS There limitations power handling ability transistor: average junction temperature second breakdown. Safe operating area curves indicate limits transistor that must observed reliable operation, i.e., transistor must subjected greater dissipation than curves indicate. data Figure based 25_C; J(pk) variable depending power level. Second breakdown pulse limits valid duty cycles must derated when 25_C. Second breakdown limitations derate same thermal limitations. Allowable current voltages shown Figure found case temperature using appropriate curve Figure J(pk) calculated from data Figure high case temperatures, thermal limitations will reduce power that handled values less than limitations imposed second breakdown. REVERSE BIAS
25°C BONDING WIRE LIMITED THERMALLY LIMITED SECOND BREAKDOWN LIMITED
Figure Forward Bias Safe Operating Area
COLLECTOR CURRENT (AMP) TURN LOAD LINE BOUNDARY MJ10007 LOCUS MJ10006 LESS
100°C
VBE(off) VBE(off) VBE(off)
inductive loads, high voltage high current must sustained simultaneously during turn-off, most cases, with base emitter junction reverse biased. Under these conditions collector voltage must held safe level below specific value collector current. This accomplished several means such active clamping, snubbing, load line shaping, etc. safe level these devices specified CEX(sus) given collector current represents voltage-current condition that sustained during reverse biased turn-off. This rating verified under clamped conditions that device never subjected avalanche mode. Figure gives complete reverse bias safe operating area characteristics.
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure Reverse Bias Switching Safe Operating Area
POWER DERATING FACTOR SECOND BREAKDOWN DERATING
THERMAL DERATING
CASE TEMPERATURE (°C)
Figure Power Derating
Motorola Bipolar Power Transistor Device Data
MJ10007
PACKAGE DIMENSIONS
SEATING PLANE
NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: INCH. RULES NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY.
0.13 (0.005)
0.13 (0.005)
INCHES 1.550 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 0.215 0.440 0.480 0.665 0.830 0.151 0.165 1.187 0.131 0.188
MILLIMETERS 39.37 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 5.46 11.18 12.19 16.89 21.08 3.84 4.19 30.15 3.33 4.77
STYLE BASE EMITTER CASE: COLLECTOR
CASE 1-07 TO-204AA (TO-3) ISSUE
Motorola Bipolar Power Transistor Device Data
MJ10007
Motorola reserves right make changes without further notice products herein. Motorola makes warranty, representation guarantee regarding suitability products particular purpose, does Motorola assume liability arising application product circuit, specifically disclaims liability, including without limitation consequential incidental damages. "Typical" parameters vary different applications. operating parameters, including "Typicals" must validated each customer application customer's technical experts. Motorola does convey license under patent rights rights others. Motorola products designed, intended, authorized components systems intended surgical implant into body, other applications intended support sustain life, other application which failure Motorola product could create situation where personal injury death occur. Should Buyer purchase Motorola products such unintended unauthorized application, Buyer shall indemnify hold Motorola officers, employees, subsidiaries, affiliates, distributors harmless against claims, costs, damages, expenses, reasonable attorney fees arising directly indirectly, claim personal injury death associated with such unintended unauthorized use, even such claim alleges that Motorola negligent regarding design manufacture part. Motorola registered trademarks Motorola, Inc. Motorola, Inc. Equal Opportunity/Affirmative Action Employer.
reach EUROPE: Motorola Literature Distribution; P.O. 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com
JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; Ping Industrial Park, Ting Road, N.T., Hong Kong. 852-26629298
Motorola Bipolar Power Transistor Device Data
*MJ10007/D*
MJ10007/D

Designer's SWITCHMODE trademarks Motorola, Inc. Pulse Test: Pulse Widt

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