Operation 2.5Gbit/s, Modulation Current Drive Only Capability Drive Di
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2.5Gb/s GaAs Laser Driver
Operation 2.5Gbit/s, Modulation Current Drive Only Capability Drive Direct Modulation Laser MI-Laser Maximum Peak Current 80mA Typical@RL Peak-to-Peak Output Voltage, Min: 3V@RL Single-ended Differential Input Single-5.2V Power Supply Small Outline Package similar SSOP-16
FMM3193VI
DESCRIPTION
FMM3193VI GaAs Laser Driver high-rate driver circuit designed fiber optic transmitters operating data rates 2.5Gbit/s. FMM3193VI capable driving high-power Laser diodes peak current 80mA typically, driving MI-Laser peak-to-peak voltage FMM3193VI outputs only modulation current, external bias current circuit required. This driver assembled small outline ceramic package having similar footprint SSOP-16. ABSOLUTE MAXIMUM RATINGS (VDD 0V,Ta=25°C)
Parameter Supply Voltage Input Voltage Power Supply Current Peak Current Control Voltage Output Voltage* Storage Temperature
Applied less than min.
Symbol Vout, Vout Tstg
Ratings -7.0 -2.0 +1.2 -3.1 +0.6
Unit
Direct Modulation Laser Application
ELECTRICAL CHARACTERISTICS (Unless otherwise specified, Tc=25°C, VSS=-5.2V)
Parameter Maximum Data Rate Maximum Peak Current (OUT) Output Voltage (OUT) Leakage Current (OUT) Power Supply Current Rise Time Fall Time Reference Voltage Vout IPDH Vref Symbol Test Conditions -4.1V, "HIGH", -4.1V, "HIGH", -4.1V, "LOW" -5.2V Duty Min. -1.4 Limit Typ. Max. -3.0 -1.2 Unit Gbps
Edition June 2000
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FMM3193VI
Parameter Symbol Test Condition Minimum Peak Current (OUT) IPmin -5.2V "HIGH" 25°C 70°C Min.
2.5Gb/s GaAs Laser Driver
Limit Typ. Max. 10.5 Unit
ELECTRICAL CHARACTERISTICS (Unless otherwise specified, Tc=25°C, VSS=-5.2V)
MI-Laser Application
ELECTRICAL CHARACTERISTICS (Unless otherwise specified, Tc=25°C, VSS=-5.2V)
Parameter Maximum Data Rate Maximum Peak Current (OUT) Output Voltage (OUT) Leakage Current (OUT) Power Supply Current Rise Time Fall Time Reference Voltage Vout IPDH Vref Symbol Test Conditions -4.1V, "LOW", -4.1V, "LOW", -4.1V, "HIGH" -5.2V Duty Minimum Peak Current (OUT) IPmin -5.2V "LOW" 25°C 70°C Min. -1.4 Limit Typ. Max. -3.0 -1.2 10.5 Unit Gbps
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2.5Gb/s GaAs Laser Driver
RECOMMENDED OPERATING CONDITIONS
Parameter Supply Voltage HIGH Level Input Voltage Level Input Voltage Peak Current Control Voltage Operating Temperature* Symbol Vref -1.3V Vref -1.3V Test Conditions Min. -5.46 -1.0
FMM3193VI
Limit Typ. Max. -5.2 -0.9 -1.7 -4.94 -1.6 +1.1 Unit
FMM3193VI Block Diagram
Direct Modulation Laser
MI-Laser
20-30
Vref
Drive Circuit Ipmon(VSS)
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FMM3193VI
Test Circuit
2.5Gb/s GaAs Laser Driver
Pulse Pattern Generator 0.33µF 0.068µF 0~1k 0~5k Vref 20dB ATTN ATTN 20dB Sampling Oscilloscope Ipmon (VSS)
Peak Current Control Voltage Peak Current
-5.20V Vref 1.30V 20~30
(mA)
-5.5
-5.0
-4.5
-4.0
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This Material Copyrighted Respective Manufacturer
2.5Gb/s GaAs Laser Driver
FMM3193VI Assignment
Ipmon (VSS)
FMM3193VI
View
Vref
Description
Name Vref Description Peak Current Control Voltage Supply Voltage Connection Data Input Ground Reference Voltage Connection Connection Name Ipmon(VSS) Description Connection Connection Output Complimentary Output Connection Connection Connection Peak Current Monitor
Ground Ground\ Heat Sink Ground Note: pins should connected ground.
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FMM3193VI
"VI" PACKAGE
0.18
2.5Gb/s GaAs Laser Driver
Case Style "VI"
UNIT:
(0.45)
(0.25)
(0.9)
Heat Sink 2.8) (3.1) (3.6) (3.9)
(2.0)
Ground
(0.4)
0.65 4.55
0.15
0.13
(3.2) (3.3)
Unit:
further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC. Americas R.O.W.
2355 Zanker Jose, 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which hazardous human body environment. safety, observe following procedures:
www.fcsi.fujitsu.com
this product into mouth. alter form this product into gas, powder, liquid through burning, crushing, chemical processing these by-products dangerous human body inhaled, ingested, swallowed. Observe government laws company regulations when discarding this product. This product must discarded accordance with methods specified applicable hazardous waste procedures.
FME,
Fujitsu Microelectronics Europe GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire United Kingdom TEL: 1628 504800 FAX: 1628 504888
FUJITSU QUANTUM DEVICES LIMITED
Global Business Division Global Sales Support Department Shinjuku Daiichiseimei Building, 2-7-1 Nishishinjuku, Shinjuku-ku, Tokyo, 163-0721, Japan TEL: +81-3-5322-3356 FAX: +81-3-5322-3398
FUJITSU QUANTUM DEVICES SINGAPORE LTD. Hong Kong Branch
1101, Ocean Centre, Canton Tsim Tsui, Kowloon, Hong Kong TEL: +852-23770226 FAX: +852-23763269
Fujitsu Limited reserves right change products specifications without notice. information does convey license under rights Fujitsu Limited others.
2000 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed U.S.A. FCSI0200M200
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This Material Copyrighted Respective Manufacturer
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