Applications High frequency DC-DC converters Lead-Free IRFR18N15D

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Applications High frequency DC-DC converters Lead-Free IRFR18N15D

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95061A
Applications High frequency DC-DC converters Lead-Free
IRFR18N15DPbF IRFU18N15DPbF
HEXFET® Power MOSFET
VDSS
150V
RDS(on)
0.125
Benefits Gate Drain Charge Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage Current
D-Pak IRFR18N15DPbF
I-Pak IRFU18N15DPbF
Absolute Maximum Ratings
Parameter
25°C 100°C 25°C dv/dt TSTG Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Soldering Temperature, seconds
Max.
0.71 (1.6mm from case
Units
W/°C V/ns
Typical SMPS Topologies
Telecom input DC-DC Active Clamp Reset Forward Converter
Notes through page
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12/9/04
IRFR/U18N15DPbF
Static 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. 0.17 Max. Units Conditions 250µA V/°C Reference 25°C, 0.125 10V, VGS, 250µA 150V, 120V, 150°C -100 -30V
Dynamic 25°C (unless otherwise specified)
td(on) td(off) Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. Typ. 1160 Max. Units Conditions 50V, 120V 10V, 1.0MHz 1.0V, 1.0MHz 120V, 1.0MHz 120V
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
Max.
Units
Thermal Resistance
Parameter
Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Typ.
Min. Typ. Max. Units
Max.
Units
°C/W
Diode Characteristics
Conditions MOSFET symbol showing integral reverse junction diode. 25°C, 11A, 25°C, di/dt 100A/µs Intrinsic turn-on time negligible (turn-on dominated LS+LD)
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IRFR/U18N15DPbF
9.0V 8.0V 7.5V 7.0V 6.5V BOTTOM 6.0V
Drain-to-Source Current
Drain-to-Source Current
9.0V 8.0V 7.5V 7.0V 6.5V BOTTOM 6.0V
6.0V
6.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
RDS(on) Drain-to-Source Resistance (Normalized)
Drain-to-Source Current
20µs PULSE WIDTH
Gate-to-Source Voltage
Junction Temperature
Typical Transfer Characteristics
Normalized On-Resistance Temperature
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IRFR/U18N15DPbF
10000 Ciss SHORTED Crss Coss
120V
Gate-to-Source Voltage
Capacitance(pF)
1000
Ciss
Coss
Crss
1000
Drain-to-Source Voltage
TEST CIRCUIT FIGURE
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000
Reverse Drain Current
OPERATION THIS AREA LIMITED RDS(on)
Drain Current
10us
100us
Single Pulse
10ms 1000
,Source-to-Drain Voltage
Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRFR/U18N15DPbF
Drain Current
Pulse Width Duty Factor
D.U.T.
-VDD
10a. Switching Time Test Circuit
Case Temperature
Maximum Drain Current Case Temperature
td(on)
d(off)
10b. Switching Time Waveforms
Thermal Response thJC
0.50 0.20 0.10 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJC 0.0001 0.001 0.01
0.05 0.02 0.01
0.01 0.00001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFR/U18N15DPbF
Single Pulse Avalanche Energy (mJ)
DRIVER
BOTTOM
4.4A 9.0A
D.U.T
0.01
12a. Unclamped Inductive Test Circuit
V(BR)DSS
Starting Junction Temperature
12b. Unclamped Inductive Waveforms
12c. Maximum Avalanche Energy Drain Current
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Current Sampling Resistors
Charge
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
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IRFR/U18N15DPbF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
Circuit Layout Considerations Stray Inductance Ground Plane Leakage Inductance Current Transformer
dv/dt controlled Driver same type D.U.T. controlled Duty Factor D.U.T. Device Under Test
Driver Gate Drive P.W. Period
P.W. Period VGS=10V
D.U.T. Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple
Logic Level Devices N-Channel HEXFET® Power MOSFETs
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IRFR/U18N15DPbF
D-Pak (TO-252AA) Package Outline
Dimensions shown millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: THIS IRFR120 WITH ASSEMBLY CODE 1234 ASSEMBLED 1999 ASSEMBLY LINE Note: assembly line position indicates "Lead-Free" PART NUMBER INTERNATIONAL RECTIFIER LOGO
IRFU120 916A
ASSEMBLY CODE
DATE CODE YEAR 1999 WEEK LINE
PART NUMBER INTERNATIONAL RECTIFIER LOGO
IRFU120
DATE CODE DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) YEAR 1999 WEEK ASSEMBLY SITE CODE
ASSEMBLY CODE
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IRFR/U18N15DPbF
I-Pak (TO-251AA) Package Outline
Dimensions shown millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
XAMPLE: U120 SEMBLY CODE 5678 1999 MBLY LINE Note: embly line ition indicates "Lead-F ree" PART NUMBER RNAT IONAL RECT LOGO
U120 919A
EMBLY CODE
CODE 1999 LINE
ERNAT IONAL RECT IFIER LOGO PART NUMB
U120
CODE
CODE DESIGNAT LEAD-FREE PRODUCT (OPT IONAL) YEAR 1999 WEEK EMBLY CODE
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IRFR/U18N15DPbF
D-Pak (TO-252AA) Tape Reel Information
Dimensions shown millimeters (inches)
16.3 .641 15.7 .619
16.3 .641 15.7 .619
12.1 .476 11.9 .469
FEED DIRECTION
.318 .312
FEED DIRECTION
NOTES CONTROLLING DIMENSION MILLIMETER. DIMENSIONS SHOWN MILLIMETERS INCHES OUTLINE CONFORMS EIA-481 EIA-541.
INCH
NOTES OUTLINE CONFORMS EIA-481.
Notes:
Repetitive rating; pulse width limited
max. junction temperature.
Pulse width 300µs; duty cycle Coss eff. fixed capacitance that gives same charging time
Coss while rising from VDSS
Starting 25°C, 3.3mH
11A.
11A, di/dt 170A/µs, V(BR)DSS,
175°C When mounted square (FR-4 G-10 Material). recommended footprint soldering techniques refer application note #AN-994.
Data specifications subject change without notice.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information.12/04
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Applications High frequency DC-DC converters Lead-Free IRFR18N15D

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