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Integrated Relay/ Inductive Load Driver
Provides Robust Driver Interface between D.C. Relay Coil Sensitive Logic Circuits Optimized Switch Relays from Rail Capable Driving Relay Coils Rated Features Input Drive Current Good Back-to-Front Transient Isolation Internal Zener Eliminates Need Free-Wheeling Diode Internal Zener Clamp Routes Induced Current Ground Quieter System Operation Guaranteed State with Input Connection Supports Large Systems with Minimal Off-State Leakage Resistant Accordance with 2000 Human Body Model Voltage Reduces System Current Drain Allowing Higher Resistance Relay Coils Applications Include: Telecom: Line Cards, Modems, Answering Machines, Machines, Computer Office: Feature Phone Electronic Hook Switch Computer Office: Photocopiers, Printers, Desktop Computers Consumer: VCRs, Stereo Receivers, Players, Computer Office: Cassette Recorders, Boxes Industrial: Small Appliances, White Goods, Security Systems, Computer Office: Automated Test Equipment, Garage Door Openers Automotive: Driven Relays, Motor Controls, Power Latches, Computer Office: Lamp Drivers This device intended replace array three discrete components with integrated part. available SOT-23 package. used switch inductive loads such relays, solenoids, incandescent lamps, small motors without need free-wheeling diode. MAXIMUM RATINGS 25°C unless otherwise noted)
Rating Power Supply Voltage Input Voltage Reverse Input Voltage Repetitive Pulse Zener Energy Limit (Duty Cycle 0.01%) Output Sink Current Continuous Junction Temperature Operating Ambient Temperature Range Storage Temperature Range Smallblock trademark Motorola, Inc. Symbol Vin(fwd) Vin(rev) Ezpk Tstg
MDC3105LT1
RELAY/INDUCTIVE LOAD DRIVER SILICON SMALLBLOCKINTEGRATED CIRCUIT
CASE 318-08, STYLE SOT-23 (TO-236AB)
INTERNAL CIRCUIT DIAGRAM Vout
Value +150
Unit
Motorola, Small-Signal Transistors, FETs Diodes Device Data Motorola Inc. 1997
MDC3105LT1
THERMAL CHARACTERISTICS
Characteristic Total Device Power Dissipation(1) Derate above 25°C Thermal Resistance Junction Ambient FR-5 0.75 0.062, 25°C Symbol RqJA Value Unit mW/°C °C/W
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Characteristic Symbol Unit
CHARACTERISTICS
Output Zener Breakdown Voltage Pulse) Output Leakage Current Input Voltage Vdc, O.C., 25°C) Vdc, O.C., 85°C) Guaranteed "OFF" State Input Voltage V(BRout) V(-BRout) Vin(off)
CHARACTERISTICS
Input Bias Current (HFE Limited) 0.25 Vdc, -40°C) Output Saturation Voltage -40°C) Output Sink Current Continuous -40°C, 0.25 Vdc, VO(sat) IO(on) 0.25 mAdc
TYPICAL APPLICATION-DEPENDENT SWITCHING PERFORMANCE SWITCHING CHARACTERISTICS
Characteristic Propagation Delay Times: High Propagation Delay; Figure (5.0 74HC04) High Propagation Delay; Figure (5.0 74HC04) High Propagation Delay; Figures (3.0 74HC04) High Propagation Delay; Figures (3.0 74HC04) High Propagation Delay; Figures (5.0 74LS04) High Propagation Delay; Figures (5.0 74LS04) Transition Times: Fall Time; Figure (5.0 74HC04) Rise Time; Figure (5.0 74HC04) Fall Time; Figures (3.0 74HC04) Rise Time; Figures (3.0 74HC04) Fall Time; Figures (5.0 74LS04) Rise Time; Figures (5.0 74LS04) Symbol tPHL tPLH tPHL tPLH tPHL tPLH Units
tPLH tPHL
Vout
Figure Switching Waveforms Motorola Small-Signal Transistors, FETs Diodes Device Data
MDC3105LT1
TYPICAL PERFORMANCE CHARACTERISTICS
CHARACTERISTICS)
HFE, TRANSISTOR CURRENT GAIN INPUT VOLTAGE (VOLTS) 1000 OUTPUT SINK CURRENT (mA) 0.25 -40°C 25°C 85°C MC54LS04 +BAL99LT1 MC68HC05C8 MC14049B 25°C 0.25
MC74HC04 MC68HC05C8 MDC3105LT1 MC74HC04
INPUT CURRENT (mA)
Figure Transistor Current Gain
Figure Input Requirement Compared Possible Source Logic Outputs
OUTPUT CURRENT (mA) 85°C Iout OUTPUT CURRENT (mA) 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 INPUT CURRENT (mA) 40°C 25°C
OUTPUT VOLTAGE (Vdc)
Figure Threshold Effects
Figure Transistor Output Characteristic
0.04
25°C ZENER CLAMP VOLTAGE (VOLTS) -40°C
Vout OUTPUT VOLTAGE (Vdc)
85°C 25°C
Iout Iin, INPUT CURRENT (mA)
40°C
1000
ZENER CURRENT (mA)
Figure Output Saturation Voltage versus Iout/Iin
Figure Zener Clamp Voltage versus Zener Current
Motorola Small-Signal Transistors, FETs Diodes Device Data
MDC3105LT1
TYPICAL PERFORMANCE CHARACTERISTICS
(OFF CHARACTERISTICS)
10,000 1000 OUTPUT LEAKAGE CURRENT (nA) 0.35 OUTPUT LEAKAGE CURRENT (nA) 25°C
0.35
JUNCTION TEMPERATURE (°C)
VCC, SUPPLY VOLTAGE (Vdc)
Figure Output Leakage Current versus Temperature
Figure Output Leakage Current versus Supply Voltage
RCE(sat)
Iout(max)
Iout (AMPS)
25°C TRANSISTOR THERMAL LIMIT FROM ZENER PULSED ENERGY LIMIT (REFER FIGURE
°CONTINUOUS DUTY
*232
*375
VCC(max) +6.0 0.01 Vout (VOLTS)
TYPICAL
Figure Safe Operating Area
Motorola Small-Signal Transistors, FETs Diodes Device Data
MDC3105LT1
25°C Emax Emax (Vzpk Izpk)
TIME CONSTANT (ms)
0.001 0.01 Izpk (AMPS)
Figure Zener Repetitive Pulse Energy Limit Time Constant
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
0.05 0.02 0.01 Pd(pk)
0.01 SINGLE PULSE 0.001 0.01 PULSE WIDTH (ms) 1000
PERIOD DUTY CYCLE t1/t2
10,000
100,000
1,000,000
Figure Transient Thermal Response
Motorola Small-Signal Transistors, FETs Diodes Device Data
MDC3105LT1
Using Designing Pulsed Operation repetitive pulse operating condition, time averaging allows increase device's peak power dissipation rating above average rating dividing duty cycle repetitive pulse train. Thus, continuous rating dissipation increased peak duty cycle pulse train. However, this only holds true pulse widths which short compared thermal time constant semiconductor device which they applied. pulse widths which significant compared thermal time constant device, peak operating condition begins look more like continuous duty operating condition over time duration pulse. these cases, peak power dissipation rating cannot merely time averaged dividing continuous power rating duty cycle pulse train. Instead, average power rating only scaled reduced amount accordance with device's transient thermal response, that device's junction temperature exceeded. Figure MDC3105LT1 data sheet plots transient thermal resistance, r(t) function pulse width various pulse train duty cycles well single pulse illustrates this effect. short pulse widths near left side chart, r(t), factor, which continuous duty thermal resistance multiplied determine much peak power rating increased above average power rating, approaches duty cycle pulse train, which expected value. However, pulse width increased, that factor eventually approaches duty cycles indicating that pulse width sufficiently long appear continuous duty condition this device. MDC3105LT1, this pulse width about seconds. this larger pulse widths, peak power dissipation capability same continuous duty power capability. Figure determine peak power rating specific application, enter chart with worst case pulse condition, that pulse width duty cycle determine worst case r(t) your application. Then calculate peak power dissipation allowed using equation, Pd(pk) (TJmax TAmax) (RqJA r(t)) Pd(pk) (150°C TAmax) (556°C/W r(t)) Thus duty cycle Figure yields r(t) when entered above equation, allowable Pd(pk) 85°C. Also note that these calculations assume rectangular pulse shape which rise fall times insignificant compared pulse width. this case specific application, then waveforms should multiplied together resulting power waveform integrated find total dissipation across device. This then would number that less than equal Pd(pk) calculated above. circuit simulator having waveform calculator prove very useful this purpose. Notes Time Constant Limitations Figure Safe Operating Area (SOA) MDC3105LT1. Device instantaneous operation should never pushed beyond these limits. shows Transistor "ON" condition well zener during turn-off transient. current limited Izpk capability zener well transistor addition input current through resistor. should exceeded temperature. power dissipation limits shown various pulse widths duty cycles ambient temperature 25°C. voltage limit that applied device. When input device switched off, "ON" current instantaneously dumped into zener diode where begins exponential decay. zener clamp voltage function that current level seen bowing versus curve higher currents. addition zener's current limit impacting this device's rating, clamping diode also peak energy limit well. This energy limit measured using rectangular pulse then translated exponential equivalent using relationship between time constant exponential pulse pulse width rectangular pulse having equal energy content. These time constant limits appear along versus curve various values which lines intersect limit. time constant given load should exceed these limits their respective currents. Precise limits zener energy intermediate current levels obtained from Figure Designing with this Data Sheet Determine maximum inductive load current VCC, coil resistance usually minimum temperature) that MDC3105 will have drive make sure less than rated current. pulsed operation, Transient Thermal Response Figure instructions with determine maximum limit transistor power dissipation desired duty cycle temperature range. Figures with notes above insure that instantaneous operation does push device beyond limits plot. While keeping VO(sat) requirements mind, determine input current needed achieve that output current from Figures levels input current below input threshold curves Figure verify that there will adequate input current available turn MDC3105 temperatures. levels input current above enter Figure using that input current determine input voltage required drive MDC3105 from solid versus line. Select suitable drive source family from those whose dotted lines cross solid input characteristic line right Iin, point. Using output current calculated step check Figure insure that range zener clamp voltage over temperature will satisfy system requirements. Using Figures insure that "OFF" state leakage over temperature voltage extremes does violate system requirements. Review circuit operation insure none device ratings being exceeded.
Motorola Small-Signal Transistors, FETs Diodes Device Data
MDC3105LT1
APPLICATIONS DIAGRAMS
+3.0 +3.75 +4.5 +5.5
AROMAT TX2-L2-5
Vout MDC3105LT1
Vout MDC3105LT1
74HC04 EQUIVALENT
74HC04 EQUIVALENT
Figure Dual Coil Latching Relay Application with V-HCMOS Level Translating Interface
Continuous Current Calculation TX2-5V Relay, Nominal 25°C Assuming ±10% Make Tolerance, 25°C Annealed Copper Wire 0.4%/°C [1+(0.004) (-40°-25°)] -40°C (5.5 0.25V) /118 +4.5 +5.5 AROMAT TX2-5V Vout MDC3105LT1 74LS04 BAL99LT1 74HC04 EQUIVALENT AROMAT JS1E-5V +4.5 +5.5 AROMAT JS1E-5V AROMAT JS1E-5V AROMAT JS1E-5V
Vout MDC3105LT1
Figure Relay with Interface
Figure Quad Coil Relay Bank
Motorola Small-Signal Transistors, FETs Diodes Device Data
MDC3105LT1
TYPICAL OPERATING WAVEFORMS
(VOLTS) (mA) TIME (ms)
TIME (ms)
Figure Square Wave Input
Figure Square Wave Response
Vout (VOLTS) (mA) TIME (ms)
TIME (ms)
Figure Square Wave Response
Figure Square Wave Response
Motorola Small-Signal Transistors, FETs Diodes Device Data
MDC3105LT1
INFORMATION USING SOT-23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT SURFACE MOUNTED APPLICATIONS
Surface mount board layout critical portion total design. footprint semiconductor packages must correct size insure proper solder connection interface between board package. With correct geometry, packages will self align when subjected solder reflow process.
0.037 0.95
0.037 0.95
0.079 0.035 0.031
inches
SOT-23 SOT-23 POWER DISSIPATION
power dissipation SOT-23 function size. This vary from minimum size soldering size given maximum power dissipation. Power dissipation surface mount device determined TJ(max), maximum rated junction temperature die, RJA, thermal resistance from device junction ambient, operating temperature, Using values provided data sheet SOT-23 package, calculated follows: TJ(max) calculate power dissipation device which this case milliwatts. 150°C 25°C 556°C/W milliwatts
values equation found maximum ratings table data sheet. Substituting these values into equation ambient temperature 25°C,
556°C/W SOT-23 package assumes recommended footprint glass epoxy printed circuit board achieve power dissipation milliwatts. There other alternatives achieving higher power dissipation from SOT-23 package. Another alternative would ceramic substrate aluminum core board such Thermal CladTM. Using board material such Thermal Clad, aluminum core board, power dissipation doubled using same footprint.
SOLDERING PRECAUTIONS
melting temperature solder higher than rated temperature device. When entire device heated high temperature, failure complete soldering within short time could result device failure. Therefore, following items should always observed order minimize thermal stress which devices subjected. Always preheat device. delta temperature between preheat soldering should 100°C less.* When preheating soldering, temperature leads case must exceed maximum temperature ratings shown data sheet. When using infrared heating with reflow soldering method, difference should maximum 10°C.
Thermal Clad trademark Bergquist Company.
soldering temperature time should exceed When shifting from preheating soldering, After soldering been completed, device should
allowed cool naturally least three minutes. Gradual cooling should used forced cooling will increase temperature gradient result latent failure mechanical stress. Mechanical stress shock should applied during cooling Soldering device without preheating cause excessive thermal shock stress which result damage device. maximum temperature gradient should less. 260°C more than seconds.
Motorola Small-Signal Transistors, FETs Diodes Device Data
MDC3105LT1
PACKAGE DIMENSIONS
NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: INCH. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS MINIMUM THICKNESS BASE MATERIAL.
INCHES 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236
MILLIMETERS 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60
STYLE BASE EMITTER COLLECTOR
CASE 318-08 ISSUE
Motorola reserves right make changes without further notice products herein. Motorola makes warranty, representation guarantee regarding suitability products particular purpose, does Motorola assume liability arising application product circuit, specifically disclaims liability, including without limitation consequential incidental damages. "Typical" parameters which provided Motorola data sheets and/or specifications vary different applications actual performance vary over time. operating parameters, including "Typicals" must validated each customer application customer's technical experts. Motorola does convey license under patent rights rights others. Motorola products designed, intended, authorized components systems intended surgical implant into body, other applications intended support sustain life, other application which failure Motorola product could create situation where personal injury death occur. Should Buyer purchase Motorola products such unintended unauthorized application, Buyer shall indemnify hold Motorola officers, employees, subsidiaries, affiliates, distributors harmless against claims, costs, damages, expenses, reasonable attorney fees arising directly indirectly, claim personal injury death associated with such unintended unauthorized use, even such claim alleges that Motorola negligent regarding design manufacture part. Motorola registered trademarks Motorola, Inc. Motorola, Inc. Equal Opportunity/Affirmative Action Employer. Mfax trademark Motorola, Inc. reach EUROPE Locations Listed: Motorola Literature Distribution; P.O. 5405, Denver, Colorado 80217. 1-303-675-2140 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.com TOUCHTONE 1-602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Ping Industrial Park, Motorola Back System Canada ONLY 1-800-774-1848 Ting Road, N.T., Hong Kong. 852-26629298 http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. 81-3-5487-8488
MDC3105LT1/D Motorola Small-Signal Transistors, FETs Diodes Device Data

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