IRLML6401PbF Ultra On-Resistance P-Channel MOSFET SOT-23 Footprin
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94891A
IRLML6401PbF
Ultra On-Resistance P-Channel MOSFET SOT-23 Footprint Profile (<1.1mm) Available Tape Reel Fast Switching 1.8V Gate Rated Lead-Free
HEXFET® Power MOSFET
VDSS -12V RDS(on) 0.05
Description
These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques achieve extremely on-resistance silicon area. This benefit, combined with fast switching speed ruggedized device design that HEXFET® power MOSFETs well known for, provides designer with extremely efficient reliable device battery load management. thermally enhanced large leadframe been incorporated into standard SOT-23 package produce HEXFET Power MOSFET with industry's smallest footprint. This package, dubbed Micro3TM, ideal applications where printed circuit board space premium. profile (<1.1mm) Micro3 allows easily into extremely thin application environments such portable electronics PCMCIA cards. thermal resistance power dissipation best available.
Micro3
Absolute Maximum Ratings
Parameter
25°C 70°C 25°C 70°C TSTG Drain- Source Voltage Continuous Drain Current, -4.5V Continuous Drain Current, -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Gate-to-Source Voltage Junction Storage Temperature Range
Max.
-4.3 -3.4 0.01
Units
W/°C
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Typ.
Max.
Units
°C/W
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11/8/04
IRLML6401PbF
Electrical Characteristics 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units Conditions -250µA -0.007 V/°C Reference 25°C, -1mA 0.050 -4.5V, -4.3A 0.085 -2.5V, -2.5A 0.125 -1.8V, -2.0A -0.40 -0.55 -0.95 VGS, -250µA -10V, -4.3A -1.0 -12V, -9.6V, 55°C -100 -8.0V 8.0V -4.3A -10V -5.0V -6.0V -1.0A -10V 1.0MHz
Source-Drain Ratings Characteristics
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units -1.3 -1.2
Conditions MOSFET symbol showing integral reverse junction diode. 25°C, -1.3A, 25°C, -1.3A di/dt -100A/µs
Notes: max. junction temperature. Pulse width 300µs; duty cycle
Repetitive rating; pulse width limited
Surface mounted square single layer 1oz. copper board,
steady state.
Starting 25°C, 3.5mH
-4.3A.
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IRLML6401PbF
-7.0V -5.0V -4.5V -3.0V -2.5V 1.8V -1.5V BOTTOM -1.0V
-7.0V -5.0V -4.5V -3.0V -2.5V -1.8V -1.5V BOTTOM -1.0V
Drain-to-Source Current
Drain-to-Source Current
-1.0V
-1.0V
20µs PULSE WIDTH 25°C
0.01
20µs PULSE WIDTH 150°C
0.01
Drain-to-Source Voltage
-VDS, Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
100.0
Drain-to-Source Current
25°C
10.0
RDS(on) Drain-to-Source Resistance (Normalized)
-4.3A
150°C
-12V
20µs PULSE WIDTH
-4.5V
Gate-to-Source Voltage
Junction Temperature
Typical Transfer Characteristics
Normalized On-Resistance Temperature
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IRLML6401PbF
1200 Ciss Cgd, SHORTED Crss
-4.3A =-10V
1000
-VGS Gate-to-Source Voltage
Capacitance(pF)
Ciss
Coss
Coss Crss
VDS, Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000
-ISD Reverse Drain Current
OPERATION THIS AREA LIMITED RDS(on)
Drain Current
10us 100us 10ms
-VSD,Source-to-Drain Voltage
Single Pulse
-VDS Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRLML6401PbF
Single Pulse Avalanche Energy (mJ)
Drain Current
-1.9A -3.4A BOTTOM -4.3A
Case Temperature
Starting Junction Temperature
Maximum Drain Current Case Temperature
Maximum Avalanche Energy Drain Current
1000
Thermal Response thJA
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJA 0.0001 0.001 0.01
0.00001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRLML6401PbF
0.10
Drain-to-Source Resistance
0.20 -1.8V 0.15 -2.5V
RDS(on) Drain-to -Source Voltage
0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02
0.10
-4.3A
0.05
-4.5V
0.00 Drain Current
-VGS, Gate -Source Voltage
Typical On-Resistance Gate Voltage
Typical On-Resistance Drain Current
-VGS(th) Gate threshold Voltage
-250µA
Temperature
Typical Threshold Voltage Junction Temperature
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IRLML6401PbF
Micro3 (SOT-23) Package Outline
Dimensions shown millimeters (inches)
DIMENS IONS MILLIMET 1.12 0.89 0.10 0.01 0.88 1.02 0.30 0.50 0.08 0.20 3.04 2.80 2.10 2.64 1.40 1.20 0.95 1.90 0.40 0.60 0.25 0.10 0.20 0.15 INCHES .036 .044 .0004 .0039 .035 .040 .0119 .0196 .0032 .0078 .111 .119 .083 .103 .048 .055 .0375 .075 .0158 .0236 .0118 .004 .008 .006
RECOMMENDED FOOT PRINT
0.972 [.038] 2.742 [.1079]
DIMENS IONING ANCING Y14.5M-1994. DIMENS IONS SHOWN LIMET INCHE CONT ROLL DIME ION: MILLIME PLANE OCAT PARTING LINE. RMINE DATUM DIMENS IONS MEAS URED DATUM PLANE DIMENS OLDER RATE LINE CONFORMS LINE O-236AB.
0.95 [.0375]
1.90 [.075]
0.802 [.031]
Micro3 (SOT-23/TO-236AB) Part Marking Information
(1-26) PRECEDED DIGIT CALENDAR YEAR YEAR WEEK YEAR 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 WORK WEEK
PART NUMBER
CODE
PART NUMBER CODE ERENCE: IRLML2402 IRLML2803 IRLML6302 IRLML5103 IRLML6402 IRLML6401 IRLML2502 IRLML5203
(27-52) PRECEDED YEAR 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 WORK WEEK
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IRLML6401PbF
Micro3Tape Reel Information
Dimensions shown millimeters (inches)
2.05 .080 1.95 .077 .161 .154 .062 .060 1.85 .072 1.65 .065 1.32 .051 1.12 .045
3.55 .139 3.45 .136
.326 .312
FEED DIRECTION
.161 .154
.043 .036
0.35 .013 0.25 .010
178.00 7.008 MAX.
9.90 .390 8.40 .331 NOTES: CONTROLLING DIMENSION MILLIMETER. OUTLINE CONFORMS EIA-481 EIA-541.
Data specifications subject change without notice. This product been designed qualified consumer market. Qualification Standards found IR's site.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. 11/04
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