IRLML5203PbF Ultra On-Resistance P-Channel MOSFET Surface Mount A

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IRLML5203PbF Ultra On-Resistance P-Channel MOSFET Surface Mount A

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94895A
IRLML5203PbF
Ultra On-Resistance P-Channel MOSFET Surface Mount Available Tape Reel Gate Charge Lead-Free
HEXFET® Power MOSFET VDSS
-30V
RDS(on) (mW)
98@VGS -10V 165@VGS -4.5V
-3.0A -2.6A
Description
These P-channel MOSFETs from International Rectifier utilize advanced processing techniques achieve extremely on-resistance silicon area. This benefit provides designer with extremely efficient device battery load management applications. thermally enhanced large leadframe been incorporated into standard SOT-23 package produce HEXFET Power MOSFET with industry's smallest footprint. This package, dubbed Micro3TM, ideal applications where printed circuit board space premium. profile (<1.1mm) Micro3 allows easily into extremely thin application environments such portable electronics PCMCIA cards. thermal resistance power dissipation best available.
Micro3
Absolute Maximum Ratings
Parameter
25°C 70°C 25°C 70°C TSTG Drain- Source Voltage Continuous Drain Current, -10V Continuous Drain Current, -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction Storage Temperature Range
Max.
-3.0 -2.4 1.25 0.80
Units
mW/°C
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Max.
Units
°C/W
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11/8/04
IRLML5203PbF
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) IDSS td(on) td(off) Ciss Coss Crss
Min. -1.0
Typ. 0.019
Max. Units Conditions -250µA V/°C Reference 25°C, -1mA -10V, -3.0A -4.5V, -2.6A -2.5 VGS, -250µA -10V, -3.0A -1.0 -24V, -5.0 -24V, 70°C -100 -20V -3.0A -24V -10V -15V -1.0A -10V -25V 1.0MHz
Source-Drain Ratings Characteristics
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units -1.3 -1.2
Conditions MOSFET symbol showing integral reverse junction diode. 25°C, -1.3A, 25°C, -1.3A di/dt -100A/µs
Notes:
Repetitive rating; pulse width limited
max. junction temperature.
Surface mounted FR-4 board, 5sec.
Pulse width 400µs; duty cycle
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IRLML5203PbF
-15V -10V -7.0V -5.5V -4.5V -4.0V -3.5V BOTTOM -2.7V
Drain-to-Source Current
Drain-to-Source Current
-15V -10V -7.0V -5.5V -4.5V -4.0V -3.5V BOTTOM -2.7V
-2.70V
-2.70V
20µs PULSE WIDTH
0.01
20µs PULSE WIDTH
-VDS Drain-to-Source Voltage
-VDS Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
RDS(on) Drain-to-Source Resistance (Normalized)
3.0A
Drain-to-Source Current
-15V 20µs PULSE WIDTH
-10V
-VGS Gate-to-Source Voltage
Junction Temperature
Typical Transfer Characteristics
Normalized On-Resistance Temperature
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IRLML5203PbF
-VGS Gate-to-Source Voltage
1MHz Ciss SHORTED Crss Coss
-3.0A
=-24V =-15V
Capacitance (pF)
Ciss
Coss Crss
-VDS Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
-ISD Reverse Drain Current
OPERATION THIS AREA LIMITED RDS(on)
Drain Current
10us
100us
Single Pulse
10ms
-VSD ,Source-to-Drain Voltage
-VDS Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRLML5203PbF
Drain Current
Pulse Width Duty Factor
10a. Switching Time Test Circuit
td(on) d(off)
Case Temperature
Maximum Drain Current Case Temperature
10b. Switching Time Waveforms
1000
Thermal Response thJA
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJA 0.001 0.01
0.00001
0.0001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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D.U.T.
IRLML5203PbF
RDS(on) Drain-to -Source Resistance
0.13 0.12 0.11 0.10 0.09 0.08 0.07 10.0 12.0 14.0 16.0
(on) Drain-to-Source Resistance
0.14
0.40
0.30
0.20
-4.5V
-3.0A
0.10
-10V
0.00 Drain Current
Gate -Source Voltage
Typical On-Resistance Gate Voltage
Typical On-Resistance Drain Current
Current Regulator Same Type D.U.T.
.2µF .3µF
-3mA
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
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D.U.T.
IRLML5203PbF
-VGS(th) Variace
Power
0.001
-250µA
0.010
0.100
1.000
10.000
100.000
Temperature
Time (sec)
Threshold Voltage Temperature
Typical Power Time
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IRLML5203PbF
Micro3 (SOT-23) Package Outline
Dimensions shown millimeters (inches)
DIMENS IONS MILLIMET 1.12 0.89 0.10 0.01 1.02 0.88 0.30 0.50 0.20 0.08 3.04 2.80 2.64 2.10 1.40 1.20 0.95 1.90 0.40 0.60 0.25 0.10 0.20 0.15 INCHES .036 .044 .0004 .0039 .035 .040 .0119 .0196 .0032 .0078 .111 .119 .083 .103 .048 .055 .0375 .075 .0158 .0236 .0118 .004 .008 .006
RECOMMENDED FOOT PRINT
0.972 [.038] 2.742 [.1079]
NOTE DIME NSIONING RANCING Y14.5M-1994. DIME NSIONS HOWN LIME INCHES CONTR LING DIMENS ION: MILLIME LOCAT PARTING LINE. ERMINE DATUM PLANE DIME NSIONS URED DATUM PLANE DIME NSION OLDER SUBS LINE CONFORMS LINE O-236AB.
0.95 [.0375]
1.90 [.075]
0.802 [.031]
Micro3 (SOT-23/TO-236AB) Part Marking Information
(1-26) PRECEDED DIGIT CALENDAR YEAR YEAR WEEK YEAR 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 WORK WEEK
PART NUMBER
CODE
PART NUMBER CODE ERENCE: IRLML2402 IRLML2803 IRLML6302 IRLML5103 IRLML6402 IRLML6401 IRLML2502 IRLML5203
(27-52) PRECEDED YEAR 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 WORK WEEK
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IRLML5203PbF
Micro3Tape Reel Information
Dimensions shown millimeters (inches)
2.05 .080 1.95 .077 .161 .154 .062 .060 1.85 .072 1.65 .065 1.32 .051 1.12 .045
3.55 .139 3.45 .136
.326 .312
FEED DIRECTION
.161 .154
.043 .036
0.35 .013 0.25 .010
178.00 7.008 MAX.
9.90 .390 8.40 .331 NOTES: CONTROLLING DIMENSION MILLIMETER. OUTLINE CONFORMS EIA-481 EIA-541.
Data specifications subject change without notice.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information.11/04
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IRLML5203PbF Ultra On-Resistance P-Channel MOSFET Surface Mount A

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