Static 5.0V operation 10%) High speed active power (max., version

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Static 5.0V operation 10%) High speed active power (max., version

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CY7C1020
Static
5.0V operation 10%) High speed active power (max., version) Very standby power (max., version) Automatic power-down when deselected Independent Control Upper Lower bytes Available 44-pin TSOP 400-mil (BLE) LOW, then data from pins (I/O through I/O8), written into location specified address pins through A14). Byte High Enable (BHE) LOW, then data from pins (I/O through I/O16) written into location specified address pins through A14). Reading from device accomplished taking Chip Enable (CE) Output Enable (OE) while forcing Write Enable (WE) HIGH. Byte Enable (BLE) LOW, then data from memory location specified address pins will appear I/O1 Byte High Enable (BHE) LOW, then data from memory will appear I/O16. truth table back this data sheet complete description read write modes. input/output pins (I/O through I/O16) placed high-impedance state when device deselected HIGH), outputs disabled HIGH), disabled (BHE, HIGH), during write operation LOW, LOW). CY7C1020 available standard 44-pin TSOP type 400-mil-wide packages.
Functional Description
CY7C1020 high-performance CMOS static organized 32,768 words bits. This device automatic power-down feature that significantly reduces power consumption when deselected. Writing device accomplished taking Chip Enable (CE) Write Enable (WE) inputs LOW. Byte Enable
Logic Block Diagram
DATA DRIVERS
Configuration
TSOP View I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 I/O8
Array
I/O1 I/O9
COLUMN DECODER
1020-1
I/O16 I/O15 I/O14 I/O13 I/O12 I/O11 I/O10 I/O9
DECODER
SENSE AMPS
1020-2
Selection Guide
7C1020-10 Maximum Access Time (ns) Maximum Operating Current (mA) Maximum CMOS Standby Current (mA) 7C1020-12 7C1020-15 7C1020-20
Cypress Semiconductor Corporation
3901 North First Street
Jose
95134
408-943-2600 October 1999
CY7C1020
Maximum Ratings
(Above which useful life impaired. user guidelines, tested.) Storage Temperature -65°C +150°C Ambient Temperature with Power Applied -55°C +125°C Supply Voltage Relative GND[1] -0.5V +7.0V Voltage Applied Outputs High State[1] .-0.5V +0.5V Input Voltage .-0.5V +0.5V
Current into Outputs (LOW). Static Discharge Voltage >2001V (per MIL-STD-883, Method 3015) Latch-Up Current >200
Operating Range
Range Commercial Ambient Temperature[2] +70°C 4.5V-5.5V
Electrical Characteristics Over Operating Range
7C1020-10 Parameter Description Output HIGH Voltage Output Voltage Input HIGH Voltage Input Voltage Input Load Current Output Leakage Current Operating Supply Current Automatic Power-Down Current Inputs Automatic Power-Down Current CMOS Inputs
7C1020-12 Min. Max. -0.5
7C1020-15 Min. -0.5 Max. Unit
Test Conditions Min., -4.0 Min.,
Min.
Max.
-0.5 VCC, Output Disabled Max., IOUT fMAX 1/tRC Max. VCC, VIL, fMAX Max. VCC, 0.3V, 0.3V, 0.3V,
ISB1
ISB2
Notes: (min.) -2.0V pulse durations less than case temperature.
CY7C1020
Electrical Characteristics Over Operating Range (continued)
7C1020-20 Parameter Description Output HIGH Voltage Output Voltage Input HIGH Voltage Input Voltage[1] Input Load Current Output Leakage Current Operating Supply Current Automatic Power-Down Current Inputs Automatic Power-Down Current CMOS Inputs VCC, Output Disabled Max., IOUT fMAX 1/tRC Max. fMAX Max. 0.3V, 0.3V, 0.3V, Test Conditions Min., -4.0 Min., -0.5 Min. Max. Unit
ISB1
ISB2
Capacitance[3]
Parameter COUT Description Input Capacitance Output Capacitance Test Conditions 25°C, MHz, 5.0V Max. Unit
Note: Tested initially after design process changes that affect these parameters.
Test Loads Waveforms
OUTPUT INCLUDING SCOPE OUTPUT Equivalent EQUIVALENT OUTPUT INCLUDING SCOPE 3.0V INPUT PULSES
1020-3 1020-4
1.73V
CY7C1020
Switching Characteristics[4] Over Operating Range
7C1020-10 Parameter READ CYCLE tOHA tACE tDOE tLZOE tHZOE tLZCE tHZCE tDBE tLZBE tHZBE tSCE tPWE tLZWE tHZWE Read Cycle Time Address Data Valid Data Hold from Address Change Data Valid Data Valid HIGH High
7C1020-12 Min. Max.
7C1020-15 Min. Max.
7C1020-20 Min. Max. Unit
Description
Min.
Max.
HIGH High Z[5, Power-Up HIGH Power-Down Byte enable Data Valid Byte enable Byte disable High
WRITE CYCLE
Write Cycle Time Write Address Set-Up Write Address Hold from Write Address Set-Up Write Start Pulse Width Data Set-Up Write Data Hold from Write HIGH
High Z[5, Byte enable write
Notes: Test conditions assume signal transition time less, timing reference levels 1.5V, input pulse levels 3.0V, output loading specified OL/IOH 30-pF load capacitance. HZOE, tHZBE, tHZCE, tHZWE specified with load capacitance part Test Loads. Transition measured ±500 from steady-state voltage. given temperature voltage condition, tHZCE less than tLZCE, tHZOE less than tLZOE, tHZWE less than tLZWE given device. internal write time memory defined overlap LOW, LOW. must initiate write, transition these signals terminate write. input data set-up hold timing should referenced leading edge signal that terminates write.
CY7C1020
Switching Waveforms
Read Cycle
ADDRESS tOHA DATA PREVIOUS DATA VALID DATA VALID
1020-5
Read Cycle Controlled)
ADDRESS
tACE BHE, tDOE tLZOE tDBE tLZBE HIGH IMPEDANCE tLZCE SUPPLY CURRENT tHZCE tHZBE DATA VALID IISB
1020-6
tHZOE
HIGH IMPEDANCE
DATA
IICC
Notes: Device continuously selected. and/or VIL. HIGH read cycle. Address valid prior coincident with transition LOW.
CY7C1020
Switching Waveforms (continued)
Write Cycle Controlled)
[11,
ADDRESS
tSCE
tPWE BHE, DATAI/O
1020-7
Write Cycle (BLE Controlled)
ADDRESS
BHE,
tPWE tSCE DATAI/O
1020-8
Notes: Data high impedance and/or BLE= VIH. goes HIGH simultaneously with going HIGH, output remains high-impedance state.
CY7C1020
Switching Waveforms (continued)
Write Cycle Controlled, LOW)
ADDRESS
tSCE
tPWE
BHE, tHZWE DATA tLZWE
1020-10
Truth Table
I/O1-I/O8 High Data Data High Data Data High High High I/O9-I/O High Data High Data Data High Data High High Power-Down Read bits Read Lower bits only Read Upper bits only Write bits Write Lower bits only Write Upper bits only Selected, Outputs Disabled Selected, Outputs Disabled Mode Power Standby (ISB) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Active (ICC)
CY7C1020
Ordering Information
Speed (ns) Ordering Code CY7C1020-10VC CY7C1020L-10VC CY7C1020-10ZC CY7C1020L-10ZC CY7C1020-12VC CY7C1020L-12VC CY7C1020-12ZC CY7C1020L-12ZC CY7C1020-15VC CY7C1020L-15VC CY7C1020-15ZC CY7C1020L-15ZC CY7C1020-20VC CY7C1020L-20VC CY7C1020-20ZC CY7C1020L-20ZC Document 38-00542-C Package Name Package Type 44-Lead (400-Mil) Molded 44-Lead (400-Mil) Molded 44-Lead TSOP Type 44-Lead TSOP Type 44-Lead (400-Mil) Molded 44-Lead (400-Mil) Molded 44-Lead TSOP Type 44-Lead TSOP Type 44-Lead (400-Mil) Molded 44-Lead (400-Mil) Molded 44-Lead TSOP Type 44-Lead TSOP Type 44-Lead (400-Mil) Molded 44-Lead (400-Mil) Molded 44-Lead TSOP Type 44-Lead TSOP Type Operating Range Commercial Commercial Commercial Commercial Commercial Commercial Commercial Commercial Commercial Commercial Commercial Commercial Commercial Commercial Commercial Commercial
Package Diagrams
44-Lead (400-Mil) Molded
51-85082-B
CY7C1020
Package Diagrams (continued)
44-Pin TSOP
51-85087-A
Cypress Semiconductor Corporation, 1999. information contained herein subject change without notice. Cypress Semiconductor Corporation assumes responsibility circuitry other than circuitry embodied Cypress Semiconductor product. does convey imply license under patent other rights. Cypress Semiconductor does authorize products critical components life-support systems where malfunction failure reasonably expected result significant injury user. inclusion Cypress Semiconductor products life-support systems application implies that manufacturer assumes risk such doing indemnifies Cypress Semiconductor against charges.

Static 5.0V operation 10%) High speed active power (max., version

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