Integrated gate protection diodes High cross modulation performance no
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BF961
Integrated gate protection diodes High cross modulation performance noise figure High AGC-range feedback capacitance input capacitance
Applications
Input- mixer stages especially TV-tuners MHz.
Electrostatic sensitive device. Observe precautions handling.
13625
Mechanical Data
Case: TO-50 Plastic case Weight: approx. Marking: BF961 Pinning: Drain, Source, Gate Gate
Parts Table
Part BF961 BF961A BF961B Ordering Ccode BF961A BF961B BF961A BF961B BF961 BF961 BF961 Marking TO50 TO50 TO50 Package
Absolute Maximum Ratings
Tamb unless otherwise specified Parameter Drain source voltage Drain current Gate 1/Gate source peak current Total power dissipation Channel temperature Storage temperature range Tamb Test condition Symbol IG1/G2SM Ptot Tstg Value Unit
Maximum Thermal Resistance
Parameter Channel ambient
Test condition
Symbol RthChA
Value
Unit
glass fibre printed board 1.5) plated with www.vishay.com
Document Number 85002 Rev. 1.5, 25-Nov-04
BF961
Vishay Semiconductors Electrical Characteristics
Tamb unless otherwise specified Parameter Drain source breakdown voltage Gate source breakdown voltage Gate source breakdown voltage Test condition VG1S VG2S IG1S VG2S IG2S VG1S Part Symbol V(BR)DS V(BR)G1SS V(BR)G2SS IG1SS IG2SS IDSS IDSS IDSS VG1S(OFF) VG2S(OFF) BF961A BF961B Gate source cut-off voltage Gate source cut-off voltage VG2S VG1S Typ.
VISHAY
Unit
10.5
Gate source leakage current VG1S VG2S Gate source leakage current VG2S VG1S Drain current VG1S VG2S BF961
Electrical Characteristics
Tamb unless otherwise specified VG2S Parameter Forward transadmittance Gate input capacitance Gate input capacitance Feedback capacitance Output capacitance Power gain range Noise figure VG2S VG1S VG2S Test condition Symbol y21s Cissg1 Cissg2 Crss Coss Typ. Unit
Typical Characteristics (Tamb unless otherwise specified)
Drain Current
Ptot -Total Power Dissipation
12160
-0.2 -0.4 -0.6 -0.8 Drain Source Voltage
Tamb Ambient Temperature
12159
Figure Total Power Dissipation Ambient Temperature
Figure Drain Current Drain Source Voltage
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Document Number 85002 Rev. 1.5, 25-Nov-04
VISHAY
BF961
Cissg2 Gate Input Capacitance
Y21S ForwardTransadmittance
Gate Source Voltage
-0.5
12161
Gate Source Voltage
12164
Figure Forward Transadmittance Gate Source Voltage
Figure Gate Input Capacitance Gate Source Voltage
Y21S ForwardTransadmittance
Coss Output Capacitance
-1.5 -0.5 Gate Source Voltage
12162
12165
Drain Source oltage
Figure Forward Transadmittance Gate Source Voltage
Figure Output Capacitance Drain Source Voltage
Cissg1 Gate Input Capacitance
y11)
=700
5.20 50.700
-2.0-1.5-1.0-0.5 12163 Gate Source Voltage
12166
Figure Gate Input Capacitance Gate Source Voltage
Figure Short Circuit Input Admittance
Document Number 85002 Rev. 1.5, 25-Nov-04
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BF961
VISHAY
50.700
12167
Figure Short Circuit Forward Transfer Admittance
5.20 50.700
12168
Figure Short Circuit Output Admittance
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Document Number 85002 Rev. 1.5, 25-Nov-04
VISHAY
VG2S
j0.5 150° j0.2 180° 0.04 0.08
BF961
120°
-j0.2
-j0.5
-150
-30°
-120
12921
-60°
12920
Figure Input Reflection Coefficient
Figure Reverse Transmission Coefficient
700MHz 120°
j0.5
j0.2
-150°
-j0.2
-120°
12922
-60°
12923
-j0.5
Figure Forward Transmission Coefficient
Figure Output Reflection Coefficient
Document Number 85002 Rev. 1.5, 25-Nov-04
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BF961
Vishay Semiconductors Package Dimensions
VISHAY
12242
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Document Number 85002 Rev. 1.5, 25-Nov-04
VISHAY
Ozone Depleting Substances Policy Statement
policy Vishay Semiconductor GmbH Meet present future national international statutory requirements.
BF961
Regularly continuously improve performance products, processes, distribution operatingsystems with respect their impact health safety employees public, well their impact environment. particular concern control eliminate releases those substances into atmosphere which known ozone depleting substances (ODSs). Montreal Protocol (1987) London Amendments (1990) intend severely restrict ODSs forbid their within next years. Various national international initiatives pressing earlier these substances. Vishay Semiconductor GmbH been able policy continuous improvements eliminate ODSs listed following documents. Annex list transitional substances Montreal Protocol London Amendments respectively Class ozone depleting substances Clean Amendments 1990 Environmental Protection Agency (EPA) Council Decision 88/540/EEC 91/690/EEC Annex (transitional substances) respectively. Vishay Semiconductor GmbH certify that semiconductors manufactured with ozone depleting substances contain such substances.
reserve right make changes improve technical design without further notice. Parameters vary different applications. operating parameters must validated each customer application customer. Should buyer Vishay Semiconductors products unintended unauthorized application, buyer shall indemnify Vishay Semiconductors against claims, costs, damages, expenses, arising directly indirectly, claim personal damage, injury death associated with such unintended unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: (0)7131 2831, number: (0)7131 2423
Document Number 85002 Rev. 1.5, 25-Nov-04
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