AAT8543 VDS(MAX) -20V ID(MAX) -4.2A 25°C RDS(ON): -4.5V -2.5V

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AAT8543 VDS(MAX) -20V ID(MAX) -4.2A 25°C RDS(ON): -4.5V -2.5V

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AAT8543 threshold MOSFET designed battery, cell phone, markets. Using AnalogicTechTM's ultra high density MOSFET process space saving small outline J-lead package, performance superior that normally found TSOP-6 footprint been squeezed into footprint SC70 package.
AAT8543
VDS(MAX) -20V ID(MAX) -4.2A 25°C RDS(ON): -4.5V -2.5V
SC70JW-8 Package Applications
Battery Packs Cellular Cordless Telephones Battery-powered portable equipment
Preliminary Information
View
Absolute Maximum Ratings
Symbol
TSTG
(TA=25°C unless otherwise noted) Value
±4.2 ±3.3 -1.2
Description
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TJ=150°C
Units
25°C 70°C
Pulsed Drain Current Continuous Source Current (Source-Drain Diode) Maximum Power Dissipation
25°C 70°C
Operating Junction Storage Temperature Range
Thermal Characteristics
Symbol
RJA2
Description
Typical Junction-to-Ambient steady state Maximum Junction-to-Ambient seconds Typical Junction-to-Foot
Units
°C/W °C/W °C/W
8543.2002.12.0.6
P-Channel Power MOSFET Electrical Characteristics
Symbol Description (TJ=25°C unless otherwise noted) Conditions
VGS=0V, ID=-250µA VGS=-4.5V, ID=-4.2A VGS=-2.5V, ID=-3.1A VGS=-4.5V, VDS=-5V (Pulsed) VGS=VDS, ID=-250µA VGS=±12V, VDS=0V VGS=0V, VDS=-20V VGS=0V, VDS=-16V, TJ=70°C VDS=-5V, ID=-4.2A VDS=-10V, VDS=-10V, VDS=-10V, VDS=-10V, VDS=-10V, VDS=-10V, VDS=-10V,
AAT8543
Units
Characteristics BVDSS Drain-Source Breakdown Voltage RDS(ON) ID(ON) VGS(th) IGSS IDSS Drain-Source ON-Resistance On-State Drain Current Gate Threshold Voltage Gate-Body Leakage Current Drain Source Leakage Current
-0.6
±100 -1.3 -1.2
Forward Transconductance Dynamic Characteristics Total Gate Charge Gate-Source Charge Gate-Drain Charge tD(ON) Turn-ON Delay Turn-ON Rise Time tD(OFF) Turn-OFF Delay Turn-OFF Fall Time Source-Drain Diode Characteristics Source-Drain Forward Voltage Continuous Diode Current
RD=2.4, RD=2.4, RD=2.4, RD=2.4, RD=2.4, RD=2.4, RD=2.4,
VGS=-4.5V VGS=-4.5V VGS=-4.5V VGS=-4.5V, VGS=-4.5V, VGS=-4.5V, VGS=-4.5V,
RG=6 RG=6 RG=6 RG=6
VGS=0, IS=-4.2A
Notes: Based thermal dissipation from junction ambient while mounted with optimized layout. second pulse approximates testing device mounted large multi-layer most applications. where foot thermal reference defined normal solder mounting surface device's leads. guaranteed design, however determined design. Actual maximum continuous current limited application's design. Pulse test: Pulse Width Guaranteed design. subject production testing.
8543.2002.12.0.6
P-Channel Power MOSFET Typical Characteristics
unless otherwise noted) Output Characteristics
AAT8543
Transfer Characteristics
4.5V
3.5V
-55°C 25°C 125°C
2.5V
1.5V
On-Resistance Drain Current
0.32
On-Resistance Gate Source Voltage
0.25
4.2A
RDS(ON)
RDS(ON)
0.24 0.16 0.08
0.15 0.05
2.5V
4.5V
On-Resistance Junction Temperature
Threshold Voltage
Normalized RDS(ON)
VGS(th) Variance
4.5V 4.2A
250µA
-0.1 -0.2
-0.3
(°C)
8543.2002.12.0.6
P-Channel Power MOSFET Typical Characteristics
unless otherwise noted) Gate Charge
AAT8543
Source-Drain Diode Forward Voltage
4.2A
150°C
25°C
Charge (nC)
Capacitance
1000
Single Pulse Power, Junction Ambient
Capacitance (pF)
Ciss
Power
0.001 0.01 1000
Coss Crss
Time
Transient Thermal Response, Junction Ambient
Normalized Effective Transient Thermal Impedance
0.01 Single Pulse 0.001 0.0001
0.001
0.01
1000
Time
8543.2002.12.0.6
P-Channel Power MOSFET Ordering Information
Package SC70JW-8 Marking1 JTXYY Part Number (Tape Reel) AAT8543IJS-T1
AAT8543
Note assembly date code.
Package Information
SC70JW-8
0.50 0.50 0.50
1.75 0.10 0.225 0.075 2.00 0.20
2.20 0.20
0.048REF 0.15 0.05
0.85 0.15
1.10
0.100
0.45 0.10 2.10 0.30
dimensions millimeters.
0.05 0.05
8543.2002.12.0.6
P-Channel Power MOSFET
AAT8543
AnalogicTech cannot assume responsibility circuitry other than circuitry entirely embodied AnalogicTech product. circuit patent licenses, copyrights, mask work rights, other intellectual property rights implied. AnalogicTech reserves right make changes their products specifications discontinue product service without notice, advise customers obtain latest version relevant information verify, before placing orders, that information being relied current complete. products sold subject terms conditions sale supplied time order acknowledgement, including those pertaining warranty, patent infringement, limitation liability. AnalogicTech warrants performance semiconductor products specifications applicable time sale accordance with AnalogicTech's standard warranty. Testing other quality control techniques utilized extent AnalogicTech deems necessary support this warranty. Specific testing parameters each device necessarily performed.
Advanced Analogic Technologies, Inc.
Arques Avenue, Sunnyvale, 94085 Phone (408) 737-4600 (408) 737-4611
8543.2002.12.0.6

AAT8543 VDS(MAX) -20V ID(MAX) -4.2A 25°C RDS(ON): -4.5V -2.5V

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