M3D379 M3D461 BLF0810-90; BLF0810S-90 Base station LDMOS tra
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M3D461
BLF0810-90; BLF0810S-90 Base station LDMOS transistors
Preliminary specification 2002
Philips Semiconductors
Preliminary specification
Base station LDMOS transistors
FEATURES High power gain Easy power control Excellent ruggedness Source underside eliminates isolators, reducing common mode inductance Designed broadband operation (750 GHz). APPLICATIONS Common source class-AB operation CDMA applications frequency range.
BLF0810-90; BLF0810S-90
DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated 2-lead flange package (BLF0810-90) with ceramic 2-lead earless package (BLF0810S-90). common source connected flange. Typical CDMA IS95 performance standard settings supply voltage ACPR <-45 ACPR <-63 1.98 PINNING SOT502B
PINNING SOT502A drain gate source; connected flange DESCRIPTION
drain
DESCRIPTION
source; connected flang
handbook, halfpag
view
MBK394
view
MBL105
Fig.1 Simplified outline SOT502A (BLF0810-90)
Fig.2 Simplified outline SOT502B (BLF0810S-90)
QUICK REFERENCE DATA 2-tone performance common source test circuit. MODE OPERATION Class-AB MODE OPERATION CDMA(1) Note IS95 CDMA (pilot, Paging, Sync, Trafic Codes trough ACPR ACPR 1.98 kHz. 2002 (MHz) 881.4 881.6 (MHz) 881.5 (dB) typ. 16.5 (dB) typ. typ. typ. (dBc) typ. ACPR (dB) typ. typ.
Philips Semiconductors
Preliminary specification
Base station LDMOS transistors
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 60134). SYMBOL Tstg PARAMETER drain-source voltage gate-source voltage storage temperature junction temperatur
BLF0810-90; BLF0810S-90
CONDITIONS
MIN.
MAX.
UNIT
THERMAL CHARACTERISTICS SYMBOL Note Thermal resistance determined under operating conditions. CHARACTERISTICS unless otherwise specified. SYMBOL V(BR)DSS VGSth IDSS IDSX IGSS RDSon PARAMETER drain-source breakdown voltage gate-source threshold voltage drain-source leakage current on-state drain current gate leakage current forward transconductance drain-source on-state resistance CONDITIONS VGS(th) MIN. TYP. MAX. UNIT PARAMETER CONDITIONS VALUE <0.75 UNIT
thermal resistance from junction case avg, note
2002
Philips Semiconductors
Preliminary specification
Base station LDMOS transistors
APPLICATION INFORMATION performance common source-AB circuit; MODE OPERATION Class-AB MODE OPERATION CDMA(1) Note IS95 CDMA (pilot, Paging, Sync, Trafic Codes trough ACPR ACPR 1.98 kHz. Ruggedness class-AB operation (MHz) 881.4 881.6 (MHz) 881.5 (mA) (mA)
BLF0810-90; BLF0810S-90
(dB) (dB)
(dBc) <-30 ACPR (dB) <-46 <-63
BLF0810-90 BLF0810S-90 capable withstanding load mismatch corresponding VSWR through phases (PEP).
(dB)
(dBc)
IDQ=400mA
450mA 500mA 600mA
(PEP)
(PEP)
881.4 MHz; 881.6 MHz.
881.4 MHz; 881.6 MHz.
Fig.3
Power gain efficiency functions peak envelope load power, typical values.
Fig.4
Intermodulation distortion function peak envelope load power, typical values.
2002
Philips Semiconductors
Preliminary specification
Base station LDMOS transistors
BLF0810-90; BLF0810S-90
(dBc)
(dBc)
IDQ=600mA
400mA 450mA 500mA
IDQ=600mA
500mA
450mA
400mA
(PEP)
(PEP)
881.4 MHz; 881.6 MHz.
881.4 MHz; 881.6 MHz.
Fig.5
Intermodulation distortion function peak envelope load power, typical values.
Fig.6
Intermodulation distortion function peak envelope load power, typical values.
(dB)
ACPR (dB)
1.98
(dBm)
(dBm)
881.5 MHz; measured under CDMA conditions; test signal Standard IS-95
881.5 MHz; measured under CDMA conditions; test signal Standard IS-95
Fig.7
Power gain efficiency functions average load power, typical values.
Fig.8
Intermodulation distortion function average load power, typical values.
2002
Philips Semiconductors
Preliminary specification
Base station LDMOS transistors
BLF0810-90; BLF0810S-90
0.85 0.95 (GHz)
Class-AB operation;
0.85 0.95 (GHz)
Class-AB operation;
Fig.9
Input impedance function frequency (series components); typical values.
Fig.10 Load impedance function frequency (series components); typical values.
DRAIN
BLF0810-90
GATE
Fig.11 Definition transistor impedance. 2002
2002
Philips Semiconductors
Base station LDMOS transistors
BLF0810-90; BLF0810S-90
Preliminary specification
Fig.12 Circuit test circuit.
2002
Philips Semiconductors
Base station LDMOS transistors
Dimensions
components situated side copper-clad Rogers 6006 printed-circuit board 6.15); thickness mils. other side unetched serves ground plane.
BLF0810-90; BLF0810S-90
Preliminary specification
Fig.13 Circuit test circuit.
Philips Semiconductors
Preliminary specification
Base station LDMOS transistors
List components COMPONENT C13, C14, C15, C16, C10, C11, L12, L15, Notes American Technical Ceramics type 100A capacitor same quality. DESCRIPTION multilayer ceramic chip capacitor; note multilayer ceramic chip capacitor; note multilayer ceramic chip capacitor; note tantalum capacitor trimmer capacitor multilayer ceramic chip capacitor potentiometer 7808 voltage regulator BLF0910-140 LDMOS transistor stripline; note stripline; note stripline; note stripline; note Ferroxcube stripline; note stripline; note stripline; note stripline; note stripline; note stripline; note stripline; note stripline; note stripline; note
BLF0810-90; BLF0810S-90
VALUE
DIMENSIONS
mils mils mils mils mils mils mils 1724 mils 1106 mils mils 1470 mils mils mils
striplines double copper-clad Rogers 6006 printed-circuit board 6.15); thickness mils.
2002
Philips Semiconductors
Preliminary specification
Base station LDMOS transistors
PACKAGE OUTLINE
BLF0810-90; BLF0810S-90
Flanged LDMOST ceramic package; mounting holes; leads
SOT502A
scal
DIMENSIONS (millimetre dimensions derived from original inch dimensions) UNIT inches 4.72 3.99 0.186 0.157 12.83 12.57 0.15 0.08 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 1.345 1.335 9.91 9.65 0.390 0.380 0.25 0.01 0.51 0.02
20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774
0.505 0.006 0.495 0.003
0.374 0.375 0.366 0.364
0.045 0.785 0.035 0.745
0.210 0.133 0.170 0.123
0.067 1.100 0.057
OUTLINE VERSION SOT502A
REFERENCES JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 99-10-13 99-12-28
2002
Philips Semiconductors
Preliminary specification
Base station LDMOS transistors
PACKAGE OUTLINE
BLF0810-90; BLF0810S-90
Earless flanged LDMOST ceramic package; leads
SOT502B
Package under development
Philips Semiconductors reserves right make changes without notice.
scal
DIMENSIONS (millimetre dimensions derived from original inch dimensions) UNIT inches 4.72 3.99 0.186 0.157 12.83 12.57 0.15 0.08 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 0.210 0.170 1.70 1.45 20.70 20.45 9.91 9.65 0.25
20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774
0.505 0.006 0.495 0.003
0.374 0.375 0.366 0.364
0.045 0.785 0.035 0.745
0.067 0.815 0.057 0.805
0.390 0.010 0.380
OUTLINE VERSION SOT502B
REFERENCES JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 99-12-16 99-12-28
2002
Philips Semiconductors
Preliminary specification
Base station LDMOS transistors
DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development
BLF0810-90; BLF0810S-90
DEFINITIONS This data sheet contains data from objective specification product development. Philips Semiconductors reserves right change specification manner without notice. This data sheet contains data from preliminary specification. Supplementary data will published later date. Philips Semiconductors reserves right change specification without notice, order improve design supply best possible product. This data sheet contains data from product specification. Philips Semiconductors reserves right make changes time order improve design, manufacturing supply. Changes will communicated according Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.
Preliminary data
Qualification
Product data
Production
Notes Please consult most recently issued data sheet before initiating completing design. product status device(s) described this data sheet have changed since this data sheet published. latest information available Internet DEFINITIONS Short-form specification data short-form specification extracted from full data sheet with same type number title. detailed information relevant data sheet data handbook. Limiting values definition Limiting values given accordance with Absolute Maximum Rating System (IEC 60134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Applications that described herein these products illustrative purposes only. Philips Semiconductors make representation warranty that such applications will suitable specified without further testing modification. DISCLAIMERS Life support applications These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips Semiconductors customers using selling these products such applications their risk agree fully indemnify Philips Semiconductors damages resulting from such application. Right make changes Philips Semiconductors reserves right make changes, without notice, products, including circuits, standard cells, and/or software, described contained herein order improve design and/or performance. Philips Semiconductors assumes responsibility liability these products, conveys licence title under patent, copyright, mask work right these products, makes representations warranties that these products free from patent, copyright, mask work right infringement, unless otherwise specified.
CAUTION This product supplied anti-static packing prevent damage caused electrostatic discharge during transport handling. further information, refer Philips specs.: SNW-EQ-608, SNW-FQ-302A SNW-FQ-302B.
2002
Philips Semiconductors worldwide company
Contact information additional information please visit Fax: 24825 sales offices addresses send e-mail
Koninklijke Philips Electronics N.V. 2001 rights reserved. Reproduction whole part prohibited without prior written consent copyright owner.
SCA73
information presented this document does form part quotation contract, believed accurate reliable changed without notice. liability will accepted publisher consequence use. Publication thereof does convey imply license under patent- other industrial intellectual property rights.
Printed Netherlands
budgetnum/printrun/ed/pp13
Date release: 2002
Document order number:
9397 09548
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