CPD41 High Current Switching Diode Chip Semiconductor Corp.
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CPD41
High Current Switching Diode Chip
Semiconductor Corp.
PROCESS DETAILS Process Size Thickness Anode Bonding Area Side Metalization Back Side Metalization EPITAXIAL PLANAR MILS MILS MILS
GEOMETRY GROSS INCH WAFER 29,250 PRINCIPAL DEVICE TYPES 1N3600 1N4150 CMPD4150
BACKSIDE CATHODE
Adams Avenue Hauppauge, 11788 Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
(1-August 2002)
1000
CPD41
Semiconductor Corp.
Typical Electrical Characteristics
Forward Voltage
Leakage Current
Forward Current (mA)
Reverse Current (µA)
125°C
125°C
-40°C
75°C
25°C
25°C
0.01
Forward Voltage
Reverse Voltage
Capacitance
0.96 0.94
Forward Dynamic Impedance
Dynamic Impedance (ohms)
0.98
Capacitance (pF)
0.92 0.88 0.86 0.84 0.82
25°C
25°C
1000
Reverse Voltage
Forward Current (mA)
Adams Avenue Hauppauge, 11788 Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
(1-August 2002)
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