M5M5V216ATP,RT 2097152-BIT (131072-WORD 16-BIT) CMOS STATIC

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M5M5V216ATP,RT 2097152-BIT (131072-WORD 16-BIT) CMOS STATIC

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revision-01, 98.12.08
M5M5V216ATP,RT
2097152-BIT (131072-WORD 16-BIT) CMOS STATIC
DESCRIPTION
M5M5V216A family voltage 2-Mbit static RAMs organized 131,072-words 16-bit, fabricated Mitsubishi's high-performance 0.25µm CMOS technology. M5M5V216A suitable memory applications where simple interfacing battery operating battery backup important design objectives. M5M5V216ATP, packaged 44-pin 400mil thin small outline package. M5M5V216ATP (normal lead bend type package) M5M5V216ART (reverse lead bend type package) both types very easy design printed circuit board. From point operating temperature, family divided into three versions; "Standard", "W-version", "I-version". Those summarized part name table below.
FEATURES
Single +2.7~+3.6V power supply Small stand-by current: 0.3µA(3V,typ.) clocks, refresh Data retention supply voltage=2.0V 3.6V inputs outputs compatible. Easy memory expansion Common Data Three-state outputs: OR-tie capability prevents data contention Process technology: 0.25µm CMOS Package: 400mil TSOP (II)
PART NAME TABLE
Version, Operating temperature Part name
M5M5V216ATP -55L
Power Supply
3.6V 3.6V
Access time
Stand-by current Icc(PD), Vcc=3.0V typical Ratings (max.) -1µA -3µA 20µA
max.
55ns(@ 2.7V) 50ns(@3.3V) 70ns(@ 2.7V) 65ns(@3.3V) 55ns(@ 2.7V) 50ns(@3.3V) 70ns(@ 2.7V) 65ns(@3.3V) 55ns(@ 2.7V) 50ns(@3.3V)
Active current Icc1 (3.0V, typ.)
Standard
M5M5V216ATP -70L M5M5V216ATP -55H M5M5V216ATP -70H M5M5V216ATP -55LW
0.3µA
W-version
M5M5V216ATP -70LW M5M5V216ATP -55HW M5M5V216ATP -70HW M5M5V216ATP -55L
3.6V 3.6V 3.6V 3.6V
70ns(@ 2.7V) 65ns(@3.3V) 55ns(@ 2.7V) 50ns(@3.3V) 70ns(@ 2.7V) 65ns(@3.3V) 55ns(@ 2.7V) 50ns(@3.3V) 70ns(@ 2.7V) 65ns(@3.3V) 55ns(@ 2.7V) 50ns(@3.3V) 70ns(@ 2.7V) 65ns(@3.3V)
-1µA -1µA
-3µA -3µA
20µA 50µA 24µA
45mA (10MHz) (1MHz)
0.3µA
I-version
M5M5V216ATP -70L M5M5V216ATP -55H M5M5V216ATP -70H
20µA 50µA 24µA
0.3µA
CONFIGURATION
"typical" parameter sampled, 100% tested.
DQ16 DQ15 DQ14 DQ13 DQ12 DQ11 DQ10 DQ16 DQ15 DQ14 DQ13 DQ12 DQ11 DQ10
Function Address input Chip select input Write control input Output inable input Lower Byte (DQ1 Upper Byte (DQ9 Power supply Ground supply
DQ16 Data input output
Outline: 44P3W
44P3W
Connection
MITSUBISHI ELECTRIC
revision-01, 98.12.08
M5M5V216ATP,RT
2097152-BIT (131072-WORD 16-BIT) CMOS STATIC
FUNCTION
M5M5V216ATP,RT organized 131,072-words 16-bit. These devices operate single +2.7~3.6V power supply, directly compatible both input output. fully static circuit needs clocks refresh, makes useful. operation mode determined combination device control inputs Each mode summarized function table. write operation executed whenever level overlaps with level and/or level address(A0~A16) must before write cycle must stable during entire cycle. read operation executed setting high level level while and/or active state(S=L). When setting high level other pins active stage upper-byte selesctable mode which both reading writing enabled, lower-byte non-selectable mode. when setting high level other pins active stage, lowerbyte selectable mode upper-byte non-selectable mode. When setting high level high level, chips non-selectable mode which both reading writing disabled. this mode, output stage high-impedance state, allowing OR-tie with other chips memory expansion BC1, power supply current reduced 0.3µA(25 typical), memory data held power supply, enabling battery back-up operation during power failure power-down operation non-selected mode.
FUNCTION TABLE
Write Read Write Read Mode
selection selection
DQ1~8
DQ9~16
High-Z High-Z Standby High-Z High-Z Standby Dout High-Z High-Z Dout High-Z High-Z Dout Dout Active Active Active Active Active Active Active Active Active
Write Read
High-Z High-Z
High-Z High-Z
BLOCK DIAGRAM
MEMORY ARRAY 131072 WORDS BITS
CLOCK GENERATOR
High-Z High-Z
MITSUBISHI ELECTRIC
revision-01, 98.12.08
M5M5V216ATP,RT
2097152-BIT (131072-WORD 16-BIT) CMOS STATIC
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Supply voltage Input voltage Output voltage Power dissipation Operating temperature Storage temperature Conditions With respect With respect With respect Ta=25 Standard W-version I-version (-L, (-LW, -HW) (-LI, -HI) Ratings Units
Tstg
-0.5* +4.6 -0.5* +150
-3.0V case (Pulse width 30ns)
ELECTRICAL CHARACTERISTICS
Symbol Parameter High-level input voltage Low-level input voltage Conditions
Vcc=2.7 3.6V, unless otherwise noted) Limits Vcc+0.3V Units
VOH1 VOH2 Icc1 Icc2
IOH= -0.5mA High-level output voltage IOH= -0.05mA IOL=2mA Low-level output voltage Input leakage current
High-level output voltage Output leakage current Active supply current AC,MOS level Active supply current AC,TTL level
BC2=VIH S=VIH OE=VIH, VI/O=0
<0.2V <0.2V other inputs 0.2V Vcc-0.2V Output open (duty 100%) BC2=VIL S=VIL other pins =VIH Output open (duty 100%)
0.2V,
-0.3
Vcc-0.5V
10MHz 1MHz 10MHz 1MHz
-LW, -LW, -HW, -HW,
other inputs
Icc3
Stand supply current AC,MOS level
0.2V 0.2V Other inputs=0~Vcc
Icc4
Stand supply current AC,TTL level
BC2=VIH S=VIL Other inputs=
S=VIH
Note Direction current flowing into indicated positive mark) Note Typical value Vcc=3.0V Ta=25
-3.0V case (Pulse width 30ns)
CAPACITANCE
Symbol Parameter Input capacitance Output capacitance Conditions VI=GND, VI=25mVrms, f=1MHz VO=GND,VO=25mVrms, f=1MHz
(Vcc=2.7 3.6V, unless otherwise noted) Limits Units
MITSUBISHI ELECTRIC
revision-01, 98.12.08
M5M5V216ATP,RT
2097152-BIT (131072-WORD 16-BIT) CMOS STATIC
ELECTRICAL CHARACTERISTICS TEST CONDITIONS
Supply voltage Input pulse Input rise time fall time Reference level
(Vcc=2.7 3.6V, unless otherwise noted)
2.7V~3.6V VIH=2.2V,VIL=0.4V VOH=VOL=1.5V
Transition measured ±500mV from steady state voltage.(for ten,tdis)
1TTL
Including scope capacitance
Output loads
Fig.1,CL=30pF CL=5pF (for ten,tdis)
Fig.1 Output load
READ CYCLE
Limits Symbol Parameter Read cycle time Address access time Chip select access time Byte control access time Byte control access time Output enable access time Output disable time after high Output disable time after high Output disable time after high Output disable time after high Output enable time after Output enable time after Output enable time after Output enable time after Data valid time after address
M5M5V216ATP,RT M5M5V216ATP,RT
Units
ta(A) ta(S) ta(BC1) ta(BC2) ta(OE) tdis(S) tdis(BC1) tdis(BC2) tdis(OE) ten(S) ten(BC1) ten(BC2) ten(OE) tV(A)
WRITE CYCLE
Limits Symbol Parameter Write cycle time Write pulse width Address setup time Address setup time with respect Byte control setup time Byte control setup time Chip select setup time Data setup time Data hold time Write recovery time Output disable time from Output disable time from high Output enable time from high Output enable time from
M5M5V216ATP,RT M5M5V216ATP,RT
Units
tw(W) tsu(A) tsu(A-WH) tsu(BC1) tsu(BC2) tsu(S) tsu(D) th(D) trec(W) tdis(W) tdis(OE) ten(W) ten(OE)
MITSUBISHI ELECTRIC
revision-01, 98.12.08
M5M5V216ATP,RT
2097152-BIT (131072-WORD 16-BIT) CMOS STATIC
(4)TIMING DIAGRAMS Read cycle
A0~16
ta(A)
ta(BC1)
(Note3)
ta(BC2)
(Note3)
tdis (BC1) tdis (BC1) ta(S)
(Note3)
tdis (OE)
(Note3)
(Note3) level
(OE) (BC1) (BC2)
tdis (OE)
(Note3)
DQ1~16
VALID DATA
Write cycle control mode
A0~16 (BC1) tsu(BC2)
(Note3)
(Note3)
(Note3)
(A-WH)
(Note3)
tdis(OE) DQ1~16
DATA STABLE
tdis
trec
ten(OE)
MITSUBISHI ELECTRIC
revision-01, 98.12.08
M5M5V216ATP,RT
2097152-BIT (131072-WORD 16-BIT) CMOS STATIC
Write cycle control mode)
A0~16
(BC1) (BC2)
trec
(Note3) (Note5) (Note3)
(Note3)
(Note4) (Note3)
DQ1~16
DATA STABLE
Write cycle control mode)
A0~16
(Note4) (Note3)
trec
(Note3)
(Note5)
(Note3)
(Note4)
DATA STABLE
(Note3)
DQ1~16
Note Hatching indicates state "don't care". Note Write occurs during overlaps and/or low. Note When falling edge simultaneously priorto falling edge and/or falling edge outputs maintained high impedance state. Note Don't apply inverted phase signal externally when output mode.
MITSUBISHI ELECTRIC
revision-01, 98.12.08
M5M5V216ATP,RT
2097152-BIT (131072-WORD 16-BIT) CMOS STATIC
POWER DOWN CHARACTERISTICS ELECTRICAL CHARACTERISTICS
Symbol Parameter Limits Test conditions Units
(PD) Power down supply voltage (BC)
Byte control input
Chip select input
Vcc=3.0V >Vcc 0.2V 0.2V other inputs=0~3V 0.2V other inputs=0~3V
-LW, -LW, -HW,
(PD)
Power down supply current
-HW,
Typical value Ta=25
TIMING REQUIREMINTS
Symbol Parameter Power down time Power down recovery time Limits Test conditions Units
(PD) trec (PD)
TIMING DIAGRAM
control mode (PD) 2.2V 0.2V 2.7V 2.7V trec (PD) 2.2V
control mode (PD) 2.2V 0.2V 2.7V 2.7V trec (PD) 2.2V
MITSUBISHI ELECTRIC

M5M5V216ATP,RT 2097152-BIT (131072-WORD 16-BIT) CMOS STATIC

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