M5M5V416BTP,RT M5M5V416B amily oltage 4-Mbit static RAMs organize

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M5M5V416BTP,RT M5M5V416B amily oltage 4-Mbit static RAMs organize

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revision-P04, 98.12.16
M5M5V416BTP,RT
M5M5V416B amily oltage 4-Mbit static RAMs organized 262,144-words 16-bit, abricated Mitsubishi's high-perf ormance 0.25µm CMOS technology M5M5V416B suitable memory applications where simple interf acing battery operating battery backup important design objectiv M5M5V416BTP,RT packaged 44-pin 400mil thin small outline package. M5M5V416BTP (normal lead bend package) M5M5V416BRT (rev erse lead bend package) both easy design printed circuit board. From point operating temperature, amily ided into three ersions; "Standard", "W-v ersion", "I-v ersion". Those summarized part name table below. Version, Operating temperature Part name
M5M5V416BTP -70L M5M5V416BTP -85L
PRELIMINARY
FEATURES
Notice: This final specification. Some parametric limits subject change
4194304-BIT (262144-WORD 16-BIT) CMOS STATIC
Single +2.7~+3.6V power supply Small stand-by current: 0.3µA(3V,ty clocks, resh Data retention supply oltage=2.0V 3.6V inputs outputs compatible. Easy memory expansion Common Data Three-state outputs: OR-tie capability prev ents data contention Process technology 0.25µm CMOS Package: 400mil TSOP (II) Stand-by urrent (PD), Vcc=3.0V Activ current Icc1 85°C (3.0V,
Power Supply
Access time
pical 25°C -40°C
max.
70ns 85ns 100ns 70ns 85ns 100ns 70ns 85ns 100ns 70ns 85ns 100ns 70ns 85ns 100ns 70ns 85ns 100ns
Ratings (max.) 25°C 40°C 70°C -20µA
Standard
+70°C
M5M5V416BTP -10L M5M5V416BTP -70H M5M5V416BTP -85H M5M5V416BTP -10H M5M5V416BTP -70LW M5M5V416BTP -85LW
3.6V
3.6V 3.6V
0.3µA
10µA
20µA 40µA 40mA (10MHz) (1MHz)
ersion
+85°C
M5M5V416BTP -10LW M5M5V416BTP -70HW M5M5V416BTP -85HW M5M5V416BTP -10HW M5M5V416BTP -70LI M5M5V416BTP -85LI
3.6V
0.3µA
10µA 20µA 20µA 40µA
ersion M5M5V416BTP +85°C M5M5V416BTP
3.6V
-10LI -70HI
M5M5V416BTP -85HI M5M5V416BTP -10HI
3.6V
0.3µA
10µA 20µA
CONFIGURATION
pical" parameter sampled, 100% tested.
DQ16 DQ15 DQ14 DQ13 DQ12 DQ11 DQ10 DQ16 DQ15 DQ14 DQ13 DQ12 DQ11 DQ10
Function Address input Chip select input Chip select input Write control input Output enable input Lower (DQ1 Upper (DQ9 Power supply Ground supply
DQ16 Data input output
44P3W-H
44P3W-J
Outline: 44P3W-H/J Connection
MITSUBISHI ELECTRIC
revision-P04, 98.12.16
M5M5V416BTP,RT
PRELIMINARY
Notice: This final specification. Some parametric limits subject change
4194304-BIT (262144-WORD 16-BIT) CMOS STATIC
FUNCTION
M5M5V416BTP,RT organized 262,144-words 16-bit. These ices operate single +2.7~3.6V power supply directly compatible both input output. ully static circuit needs clocks resh, makes usef operation mode determined combination control inputs Each mode summarized unction table. write operation executed whenev erlaps with and/or high address(A0~A17) must write must stable during entire cycle. read operation executed etting high while and/or activ state(S1=L,S2=H). When setting high other pins activ stage upper-by selectable mode which both reading writing enabled, lower-by non-selectable mode. when setting high other pins activ stage, lowerby selectable mode upper-by non-selectable mode. When setting high high chips non-selectable mode which both reading writing disabled. this mode, output stage high-impedance state, allowing OR-tie with other chips memory expansion BC1, power supply urrent reduced 0.3µA(25°C, pical), memory data held power supply enabling battery back-up operation during power ailure power-down operation non-selected mode.
FUNCTION TABLE
Mode
selection selection selection selection
DQ1~8
DQ9~16
Write Read Write Read Write Read
BLOCK DIAGRAM
MEMORY ARRAY 262144 WORDS BITS
CLOCK GENERATOR
High-Z High-Z High-Z High-Z Dout High-Z High-Z High-Z High-Z Dout High-Z
High-Z High-Z High-Z High-Z High-Z High-Z High-Z Dout High-Z Dout High-Z
Standby Standby Standby Standby Activ Activ Activ Activ Activ Activ Activ Activ Activ
MITSUBISHI ELECTRIC
revision-P04, 98.12.16
M5M5V416BTP,RT
PRELIMINARY
Notice: This final specification. Some parametric limits subject change
4194304-BIT (262144-WORD 16-BIT) CMOS STATIC
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Supply oltage Input oltage Output oltage Power dissipation Operating temperature Storage temperature Conditions With respect With respect With respect Ta=25°C Standard ersion ersion (-L, (-LW, -HW) (-LI, -HI) Ratings Units
-0.5 +4.6 -0.5 +150
-3.0V case (Pulse width 30ns)
ELECTRICAL CHARACTERISTICS
Symbol
Vcc=2.7 3.6V, unless otherwise noted) Conditions Limits Vcc+0.3V Units
Parameter High-lev input oltage Low-lev input oltage
High-level output voltage High-level output voltage
Low-lev output oltage Input leakage current Output leakage current Activ supply urrent AC,MOS Activ supply urrent AC,TTL
-0.5mA -0.05mA OL=2mA
BC2=VIH S1=VIH S2=VIH OE=VIH, VI/O=0 BC2< 0.2V, 0.2V, Vcc-0.2V other inputs 0.2V Vcc-0.2V Output open (duty 100%)
-0.3
Vcc-0.5V
10MHz 1MHz 10MHz 1MHz +85°C +70°C +85°C +70°C +40°C +25°C +25°C +25°C
BC2=V ,S2=V other pins Output open (duty 100%)
0.2V,
-LW, -LW, -HW, -HW,
other inputs
Stand upply current AC,MOS
0.2V,
other inputs
0.2V 0.2V, 0.2V Other inputs=0~Vcc
Stand upply current AC,TTL
BC2=VIH S1=VIH S2=VIL Other inputs=
Note Direction current flowing into indicated positive mark) Note Typical value Vcc=3.0V Ta=25°
-3.0V case (Pulse width 30ns)
CAPACITANCE
Symbol Parameter Input capacitance Output capacitance Conditions
(Vcc=2.7 3.6V, unless otherwise noted) Limits Units
=GND, =25mVrms, =1MHz GND,VO =25mVrms, =1MHz
MITSUBISHI ELECTRIC
revision-P04, 98.12.16
M5M5V416BTP,RT
ELECTRICAL CHARACTERISTICS TEST CONDITIONS
Supply oltage
PRELIMINARY
Notice: This final specification. Some parametric limits subject change
4194304-BIT (262144-WORD 16-BIT) CMOS STATIC
(Vcc=2.7 3.6V, unless otherwise noted)
2.7V~3.6V Input pulse IH=2.4V,V IL=0.4V Input rise time time
erence
1TTL
Including scope capacitance
OH=V OL=1.5V
Transition measured ±500mV steady state voltage.(f ten,t
Output loads
Fig.1,CL=30pF CL=5pF (for ten,tdis)
Limits
Fig.1 Output load
READ CYCLE
Symbol a(A) a(S1) a(S2) a(BC1) a(BC2) a(OE) (S1) (S2) (BC1) (BC2) (OE) en(S1) en(S2) en(BC1) en(BC2) en(OE) V(A) Parameter Read time Address access time Chip select access time Chip select access time control access time control access time Output enable access time Output disable time high Output disable time Output disable time high Output disable time high Output disable time high Output enable time Output enable time high Output enable time Output enable time Output enable time Data alid time after address
70L,70H,70LW 70HW,70LI,70HI 85L,85H,85LW 85HW,85LI,85HI 10L,10H,10LW 10HW,10LI,10HI
Units
WRITE CYCLE
Limits Symbol Parameter Write time Write pulse width Address setup time Address setup time with respect control setup time control setup time Chip select setup time Chip select setup time Data setup time Data hold time Write recov time Output disable time Output disable time high Output enable time high Output enable time
70L,70H,70LW 85L,85H,85LW 70HW,70LI,70HI 85HW,85LI,85HI 10L,10H,10LW 10HW,10LI,10HI
Units
w(W) su(A) su(A-WH) su(BC1) su(BC2) su(S1) su(S2) su(D) h(D) (OE) en(W) en(OE)
MITSUBISHI ELECTRIC
revision-P04, 98.12.16
M5M5V416BTP,RT
PRELIMINARY
Notice: This final specification. Some parametric limits subject change
4194304-BIT (262144-WORD 16-BIT) CMOS STATIC
(4)TIMING DIAGRAMS Read cycle
0~17
a(A) a(BC1)
a(BC2)
(Note3)
BC1,BC2
(Note3)
(BC1) (BC1) a(S1)
(Note3)
(S1) a(S2)
(Note3)
(Note3)
(S2) (OE)
(Note3)
(Note3)
(OE) (BC1) (BC2) (S1) (S2)
(OE)
(Note3)
1~16
VALID DATA
Write cycle control mode
0~17
(BC1) (BC2) BC1,BC2
(Note3) (Note3)
(Note3)
(S1)
(Note3)
(Note3)
(S2)
(Note3)
(OE) 1~16
(A-WH)
(OE)
DATA STABLE
MITSUBISHI ELECTRIC
revision-P04, 98.12.16
M5M5V416BTP,RT
PRELIMINARY
Notice: This final specification. Some parametric limits subject change
4194304-BIT (262144-WORD 16-BIT) CMOS STATIC
Write cycle control mode)
0~17 BC1,BC2
(Note3)
(BC1) (BC2)
(Note3)
(Note3) (Note5) (Note4) (Note3) (Note3)
DATA STABLE
(Note3)
1~16
Note Hatching indicates state "don't care". Note Write occurs during low, high erlaps and/or low. Note When alling edge simultaneously prior alling edge and/or alling edge rising edge outputs maintained high impedance state. Note Don't apply erted phase signal externally when output mode.
MITSUBISHI ELECTRIC
revision-P04, 98.12.16
M5M5V416BTP,RT
PRELIMINARY
Notice: This final specification. Some parametric limits subject change
4194304-BIT (262144-WORD 16-BIT) CMOS STATIC
Write cycle control mode)
0~17
BC1,BC2
(Note3)
(S1)
(Note3)
(Note3) (Note5) (Note3)
(Note3)
(Note4)
DATA STABLE
(Note3)
1~16
Write cycle control mode)
0~17
BC1,BC2
(Note3)
(S2)
(Note3)
(Note3) (Note5) (Note3)
(Note3)
(Note4)
DATA STABLE
(Note3)
1~16
MITSUBISHI ELECTRIC
revision-P04, 98.12.16
M5M5V416BTP,RT
PRELIMINARY
Notice: This final specification. Some parametric limits subject change
4194304-BIT (262144-WORD 16-BIT) CMOS STATIC
POWER DOWN CHARACTERISTICS ELECTRICAL CHARACTERISTICS
Symbol Parameter Limits Test conditions Units
(PD) Power down supply voltage Byte control input
(BC) (S1) (S2)
Chip select input Chip select input
Vcc=3.0V Vcc-0.2V 0.2V Vcc-0.2V other inputs=0~3V >Vcc 0.2V other inputs=0~3V 0.2V other inputs=0~3V
-LW, -LW, -HW, -HW, +85°C +70°C +85°C +70°C +40°C +25°C +25°C +25°C
(PD)
Power down supply urrent
TIMING REQUIREMENTS
Symbol Parameter Power down time Power down recov Test conditions
Typical value Ta=25°C
Limits
Units
(PD) (PD)
TIMING DIAGRAM
control mode (PD) control mode (PD) 2.2V control mode 0.2V (PD) 2.7V 0.2V 2.7V (PD) 0.2V 0.2V 2.7V 2.7V (PD) 2.2V 2.2V 0.2V 2.7V 2.7V (PD) 2.2V
MITSUBISHI ELECTRIC
revision-P04, 98.12.16
M5M5V416BTP,RT
PRELIMINARY
Notice: This final specification. Some parametric limits subject change
4194304-BIT (262144-WORD 16-BIT) CMOS STATIC
Revision History Revision
History first edition Pin#28: Font problem fixed 70ns version added
Date
Remark Preliminary Preliminary Preliminary Preliminary
MITSUBISHI ELECTRIC
44P3W-H
Plastic 44pin 400mil TSOP(II) Weight(g) 0.47
EIAJ Package Code TSOPII44-P-400-0.80 Scale:
JEDEC Code
Lead Material Alloy
Recommended Mount Symbol
Detail
Detail
Dimension Millimeters 0.05 0.125 0.45 0.35 0.125 0.175 0.105 18.31 18.51 18.41 10.06 10.26 10.16 11.56 11.96 11.76 0.45 0.75 0.25 0.805 0.955 0.16 10.36
44P3W-J
Weight(g) 0.47
Plastic 44pin 400mil TSOP(II) Lead Material Alloy
EIAJ Package Code TSOPII44-P-400-0.80 Scale:
JEDEC Code
Recommended Mount Symbol
Detail
Detail
Dimension Millimeters 0.05 0.125 0.35 0.45 0.105 0.125 0.175 18.31 18.51 18.41 10.06 10.26 10.16 11.56 11.96 11.76 0.45 0.75 0.25 0.805 0.955 0.16 10.36

M5M5V416BTP,RT M5M5V416B amily oltage 4-Mbit static RAMs organize

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