NIS6111 Simplified Block Diagram NIS6111, BERS (Better Efficiency

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NIS6111 Simplified Block Diagram NIS6111, BERS (Better Efficiency

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AND8183/D NIS6111 BERSt (Better Efficiency Rectifier System) Switching Application Note
NIS6111 Simplified Block Diagram
NIS6111, BERS (Better Efficiency Rectifier System) simple reliable device consisting integrated control RDS(on) power MOSFET replace Schottky diode using hybrid technology. meet increasing demand power delivery efficiency, used only ORing applications obtain higher system power efficiency, also switching applications, such flyback converters achieve higher power supply efficiency. demo board switching applications using NIS6111 been designed. test results show that power efficiency increases significantly with load current. This application note presents more details demonstration boards. easily connected secondary transformer winding loads test purpose.
Applications
Reg_in (Pin Input internal voltage regulator. Bias (Pin Output internal voltage regulator. under normal operating conditions. provides power internal components only. external connections necessary this pin. Gate (Pin Gate driver output internal external N-Channel MOSFETs, gate turn time typically Source (Pin Power input, connected system power source output. This anode rectifier. Drain (Pin Power output, connected system load. This cathode rectifier will common cathodes other rectifiers, when used high side configuration.
Secondary side rectifiers converters, such flyback, forward, etc.
Reg_in
Bias
Gate
Drain
Voltage Regulator UVLO NTD011N02 MOSFET
Source
Figure Conceptual Block Major Component Diagram NIS6111
Semiconductor Components Industries, LLC, 2005
February, 2005 Rev.
Publication Order Number: AND8183/D
AND8183/D
When load current flows NIS6111 (internal MOSFET) from Source (Pin Drain (Pin equal RDS(on) times with negative direction. Gate MOSFET load current runs through NIS6111 from Drain Source (reverse current), becomes positive. When equal larger than which offset voltage internal comparator, output comparator switches from high turns MOSFET completely (see Figure
NIS6111 Basic Switching Operation Discontinuous Mode Flyback Converters
Configuration Reg_in connected ground through diode shown Figure quite clear that there voltage difference between Reg_in Source shown Figure value this differential voltage during primary
minimum voltage requirement Reg_in referenced Source energize NIS6111, NIS6111 different operating configurations switching applications shown Figure first reverse bias voltage diode, which higher than (called Configuration second less than reverse bias voltage (called Configuration
MOSFET turn-on time (Ton), during primary MOSFET turn-off time (Toff). This differential voltage charges internal capacitor NIS6111 activates NIS6111 device. When load current flows through NIS6111 from Source (Pin Drain (Pin current goes through body diode MOSFET first; this body diode voltage drop around Drain voltage negative relative Source, which will switch internal comparator from high turn MOSFET approximately Thus, MOSFET takes over load current from body diode completely. requirements operate NIS6111 minimum charge time recharge internal capacitor, voltage needs least
more than
Vgate
-Vds
+Vds
Figure Relation Between Vgate MOSFET
Vreg_in NIS6111 XFMR Voutput XFMR
Vreg_in NIS6111 Voutput
Higher than (Configuration
Less than Equal (Configuration
Figure Circuits Switching Operation Flyback Converter
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AND8183/D
-(Ns/Np)*Vin Vreg_in-Vs (Ns/Np)*Vin Toff
(Configuration Figure Major Secondary Voltage Waveforms Configuration
Configuration Reg_in connected another secondary winding transformer Diode (see Figure During primary MOSFET turn-on time there differential voltage across Reg_in Source NIS6111 with value
current starts flow through NIS6111, same operating sequence time delay Configuration will happen, turning MOSFET minimum requirements operate NIS6111in this configuration charge time least recharge internal capacitor voltage least
Figure This differential voltage will charge internal capacitor energize NIS6111. When load
more than
-Vin*(Ns1/Np) Vin*(Ns2/Np)
-Vo*(Ns2/Ns1) Vreg_in-Vs1 (Vin/Np)*(Ns1+Ns2)
Toff
-Vo*(1+Ns2/Ns1)
(Configuration Figure Major Secondary Voltage Waveforms Configuration
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AND8183/D
Details Demonstration Board
circuit demonstration board presented Figure diode (D1, 1N4148) added protection reverse applied voltage when voltage
voltage higher than Vreg_in. snubber network (R1, optional suppress noise from power supply system. These ground pins connections system.
Vreg_in
1N4148 (Optional) Reg_in Vgate
Vcap
Source V_cap
Drain Gate
NIS6111
(Optional) (Optional)
Figure Demo Board Schematic
Figure Demo Board
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Test Results Flyback Power Supply
EFFICIENCY INCREASE
parts (Schottky Diode NIS6111) were compared offline Flyback power supply secondary rectifier. load condition test from load full load. input voltage output voltage 12.5 comparison efficiency presented following Table NIS6111 improved power efficiency significantly. Also, power efficiency increases with load currents dramatically (see Figure Figure shows typical waveform drain source voltage primary MOSFET current through NIS6111 certain load condition. voltage waveform (100 V/DIV) current waveform (5.0 A/DIV). Figure shows particular voltage waveforms MOSFET drain source voltage current through NIS6111 typical load condition.
Table Efficiency Comparison
LOAD CURRENTS
Figure Efficiency Increase Load Current
Light Load Load Current with Schottky Diode (MBR20100) with BERS (NIS6111) 81.7 81.7
Load 85.5
High Load 84.6 87.1
Current through NIS6111, 5A/Div Drain Source Voltage Primary MOSFET, 100V/Div
Figure Typical Voltage Current Waveforms Conclusion
This application note describes NIS6111 device operated switching application details demonstration board. Regarding NIS6111 operating
ORing applications, application note AND8174/D (Title: NIS6111 Better ORing Diode Operation Notes) available Semiconductor website.
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AND8183/D
BERS trademark Semiconductor Components Industries, (SCILLC).
Semiconductor registered trademarks Semiconductor Components Industries, (SCILLC). SCILLC reserves right make changes without further notice products herein. SCILLC makes warranty, representation guarantee regarding suitability products particular purpose, does SCILLC assume liability arising application product circuit, specifically disclaims liability, including without limitation special, consequential incidental damages. "Typical" parameters which provided SCILLC data sheets and/or specifications vary different applications actual performance vary over time. operating parameters, including "Typicals" must validated each customer application customer's technical experts. SCILLC does convey license under patent rights rights others. SCILLC products designed, intended, authorized components systems intended surgical implant into body, other applications intended support sustain life, other application which failure SCILLC product could create situation where personal injury death occur. Should Buyer purchase SCILLC products such unintended unauthorized application, Buyer shall indemnify hold SCILLC officers, employees, subsidiaries, affiliates, distributors harmless against claims, costs, damages, expenses, reasonable attorney fees arising directly indirectly, claim personal injury death associated with such unintended unauthorized use, even such claim alleges that SCILLC negligent regarding design manufacture part. SCILLC Equal Opportunity/Affirmative Action Employer. This literature subject applicable copyright laws resale manner.
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NIS6111 Simplified Block Diagram NIS6111, BERS (Better Efficiency

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