line capacitance less than which required high data transmission rate.

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AND8181/D Diode Selection Guidelines
line capacitance less than which required high data transmission rate. voltage clamping limit device, defined exponential waveform, approximately equal surge current clamping voltage ensures that transient sure voltage will exceed transceiver's maximum voltage specification CAN_H CAN_L data lines.
Controller Area Network (CAN) serial communication protocol designed providing reliable high speed data transmission harsh environments. This document provides guidelines select Transient Voltage Suppression (TVS) diodes protect data lines. diodes provide cost solution conducted radiated Electromagnetic Interference (EMI) Electrostatic Discharge (ESD) noise problems. noise immunity level reliability transceivers easily increased adding external diodes prevent transient voltage failures.
NUP2105L Diode Array
NUP2105L provides transient voltage suppression solution data communication lines. NUP2105L dual bidirectional device compact SOT-23 package. This device based Zener technology that optimizes active area junction provide robust protection against transient surge voltage ESD. Figure provides circuit diagram NUP2105L. NUP2105L been tested levels that exceed specifications popular high speed networks. Listed below summary NUP2105L's specifications. Peak Power Dissipation line, Human Body Model protection IEC-61000-4-2 level contact discharge 7637-1, nonrepetitive surge pulse 7637-3, repetitive Electrical Fast Transient (EFT) surge pulses, 61000-4-5 lightning load switch immunity, NUP2105L uses silicon semiconductor technology offer distinct advantages over alternative protection devices such MOVs choke filters. diode provides fast response time, line capacitance clamping voltage. NUP2105L time response time less than able clamp fast surge transient voltages before damage occur. silicon design
Figure NUP2105L Bidirectional TVS/ESD Protection Device
Figure provides example typical protection circuit. circuit provides protection CAN_H CAN_L data lines clamping surge voltage level that will damage transceiver. Further details protection circuits provided reference (1).
CAN_H Transceiver CAN_L
NUP2105L
Figure High-Speed Fault Tolerant Protection Circuit
Semiconductor Components Industries, LLC, 2004
August, 2004 Rev.
Publication Order Number: AND8181/D
AND8181/D
Diode Terminology
first step selecting diode device define device parameters. Figure provides graphical definition bidirectional diode parameters.
Maximum Clamping Voltage (VC) maximum voltage drop across diode maximum peak pulse current. Reverse Leakage Current (IR) current measured reverse working voltage. Test Current (IT) current where breakdown voltage measured. Peak Pulse Current (IPP) maximum surge current specified device.
Transceiver Specifications
VRWM
VRWM
Bidirectional Figure Bidirectional Characteristic Curve
parameters are: Reverse Working Voltage (VRWM) defined maximum operating voltage. this voltage device non-conducting state functions essentially high impedance capacitor. VRWM also known stand-off voltage. Reverse Breakdown Voltage (VBR) point where device conducts avalanche mode becomes impedance. breakdown voltage typically measured current
There several transceiver specifications that must evaluated order select appropriate diode. critical transceiver characteristics include: Maximum supply voltage Common mode voltage Maximum transmission speed Immunity Coupled Electrical Disturbance Data Lines Nonrepetitive Surge iiRepetitive Surge Electrical Fast Transient (EFT) Table provides summary system requirements transceiver. 11898-2 physical layer specification forms baseline most systems. transceiver requirements Honeywell® Smart Distribution Systems (SDS®) Rockwell (Allen-Bradley) DeviceNethigh speed networks similar 11898-2. DeviceNet transceiver requirements similar 11898-2; however, they include minor modifications required industrial environment.
Table Transceiver Requirements High-Speed Networks
Parameter Voltage System) Common Mode Voltage 11898-2 -3.0 CAN_L: -2.0 (min) (nom) CAN_H: (nom) (max) Transmission Speed Immunity Popular Applications Mb/s kb/s specified, recommended $8.0 (contact) 7637-3, pulses Automotive, Truck, Medical Marine Systems Same 11898-2 specified, recommended $8.0 (contact) 61000-4-4 Industrial Control Systems kb/s kb/s specified, recommended $8.0 (contact) Same 11898-2 Industrial Control Systems Same 11898-2 Same 11898-2 Physical Layer Specification DeviceNet Same 11898-2
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AND8181/D
Maximum Supply Voltage
REVERSE BIAS VOLTAGE -55°C +25°C +65°C +150°C
diode VRWM should greater than maximum system supply voltage because transceiver must immune indefinite short between battery power lines signal lines. addition, some applications often have unique short duration maximum supply voltage specifications. example, some automotive systems have provision allowing jump start from battery. minimum VRWM NUP2105L specified 26.2 respectively. NUP2105L nominal which measured with pulse test current. TVS's Zener technology produces breakdown voltage characterized with sharp knee very leakage current. sharp knee NUP2105L provides predictable device performance over potential system deviations. Figure shows versus characteristics NUP2105L over temperature range -55°C +150°C.
(mA) VBR, VOLTAGE -55°C +150°C 25°C 65°C
LEAKAGE CURRENT (nA)
Figure versus Temperature Characteristics NUP2105L
Common Mode Voltage
common mode voltage specification required because there significant difference voltage potential between ground reference transmitting receiving nodes. transceivers must able function with signal line voltage that offset much above below nominal voltage level CAN_H CAN_L signal lines. solution common mode problem bidirectional devices that will clamp voltage signal lines offset.
Maximum Transmission Speed
Figure versus Characteristics NUP2105L
NUP2105L very leakage (IR) characteristics negligible power consumption non-conducting mode. typical leakage current device approximately 25°C VRWM limit harsh applications that require operation ambient temperatures 125°C, NUP2105L still maintains sub-microamp leakage level. Figure shows typical leakage current characteristics NUP2105L over temperature range -55°C 150°C.
data transmission rate determines maximum capacitance device. large capacitance data lines causes distortion signal waveforms. distortion data lines minimized selecting capacitance device. recommended that maximum capacitance protective network measured from each signal line ground should less than Mbits/s kbits/s. capacitance versus bias voltage relationship NUP2105L shown Figure capacitance between signal lines ground measured varying bias, frequency peak-to-peak amplitude diode's data sheet specifies maximum capacitance bias voltage however, average voltage data lines will provide more accurate estimation capacitive loading. average voltage high-speed fault tolerant transceivers estimated equal recessive voltage typical capacitance NUP2505L approximately
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AND8181/D
CAPACITANCE (pF) REVERSE VOLTAGE -40°C +125°C +25°C
Figure Capacitance versus Characteristic NUP2105L
Immunity Tests
Background
Electromagnetic Compatibility (EMC) become major design concern network products. Designers being challenged include protection, without incurring size cost penalty. modules must must compliant with strigent standards operate without either becoming effected adversely effecting operation neighboring units. networks must have good noise immunity because data lines major source entry point both conducted radiated ESD.
Pass/Fail Test Criteria
pass/fail criterion Zener diode more stringent than damage limit transceiver. TVS's pass/fail test level defined voltage which electrical characteristics device begin shift. This limit significantly below value which permanent damage will occur device. Zener diode absorbs transient surge voltage functioning dynamic impedance that shunts overvoltage ground. Zener diode's impedance varied maintain constant clamping voltage; however, high current value clamping voltage will begin drop. this point, other diode characteristics such leakage current will also significantly increase. surge voltage removed, Zener diode will recover resume functioning without permanent damage change original electrical characteristics. However, current increased over this level, impedance Zener will decrease point which effectively short, resulting large current that will permanently damage device transient removed.
Rating
pass/fail criteria test defined both operational status system damage occurs module. communication fault allowed during test surge; however, normal data transmission must resume after completion transient event. main advantages that network ability detect communication error automatically initiate another transmission data. transceivers define pass/fail transition maximum surge voltage that guaranteed withstand without occurring permanent damage.
CURRENT
external diode used increase immunity level module from failures. 11898-2, DeviceNet physical layer specifications list requirement; however, generally recommended that network system should have contact rating least ±8.0 non-contact rating immunity level specified either Human Body Model (HBM) International Electromechanical Commission (IEC) 61000-4-2 tests. test typically specification listed data sheets, while specification often used system level tests. Both specifications designed simulate direct contact person object such connector; however, test more severe than HBM. test defined discharge capacitor through resistor, while uses capacitor 1500 resistor. Figures provides waveform test. summary NUP2105L's immunity provided Table
Figure 61000-4-2 Test Waveform
TIME (ns)
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AND8181/D
Table 7637 IEC61000-4-X Test Specifications
Test Waveform Test Specifications -100 Imax Pulse tduration 5000 pulses Figure 7637-1 Power Supply Lines Pulse Figure tduration 5000 pulses +100 Imax NUP25050L Test Imax 1.75 Vclamp_max tduration 5000 pulses 2000 Imax Vclamp_max tduration 5000 pulses Imax Vclamp_max tduration minutes Switching noise inductive loads. series with inductor that disconnected. Simulated Noise Source parallel with inductive load that disconnected from power supply.
Pulse 7637-3 Data Line Figure Pulse Figure
Imax tduration minutes Imax tduration minutes Vopen circuit Ishort circuit (Level Severe Industrial Environment)
(Note
Switching noise inductive loads.
61000-4-4 Figure Data Line
tburst fburst kHz, trepeat tduration minute Vopen circuit Ishort circuit Figure Lightning, nonrepetitive power line load switching
61000-4-5
Figure
device under test. immunity level measured with test limits beyond 61000-4-4 test, with more severe test conditions 7637-3.
Table NUP2505L Test Results
Specification Human Body Model 61000-4-2 Contact Contact Non-contact (Air Discharge) Test (Note (Note Test Level Pass Pass Pass Pass Fail
Test equipment maximum test voltage
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AND8181/D
Specifications
protection level provided device measured using International Organization Standardization (ISO) 7637-1 specifications that representative various noise sources. 7637-1 specification used define susceptibility coupled transient noise power supply, while 7637-3 defines noise immunity tests data lines. 7637 tests also verify robustness reliability design applying surge voltage extended durations. 61000-4-X specifications also used quantify immunity level system. 61000-4 7637 tests similar; however, standard created generic test electronic system, while 7637 standard designed vehicular applications. IEC61000-4-4 Electrical Fast Transient (EFT) specification similar 7637-1 pulse tests requirement systems. 61000-4-5 test used define power absorption capacity device long duration voltage transients such lightning. Table provides summary 7637 61000-4-X test specifications.
Coupled Electrical Disturbances
Voltage, Time
Parameters 13.5 -100
Figure 7637-1, Test Pulse
transceiver must able survive high energy transients that produced nonrepetitive repetitive transient surge voltages. definition nonrepetitive repetitive surges determined duration transient time between surges. nonrepetitive surge tested transient voltage with pulse width typically 2000 repeat rate usually pulse second. Repetitive surges represented burst transient pulses. nonrepetitive repetitive transient voltage signals typically generated supply voltage line coupled into data line signals because power data lines typically located inside same wire bundle. Example nonrepetitive noise sources include lightning, load dump, power switching, load changes short circuit faults. Repetitive noise sources include inductive load switching, relay contact chatter ignition system noise.
Nonrepetitive Surge Immunity
Time
Voltage,
Parameters 13.5 -100 0.05
Time
nonrepetitive surge tests used test module's transient immunity from either switching lightning induced surge voltage. switching transients caused power switching, sudden load changes short circuit fault power distribution system. example, motor produce surge voltage because continues rotate short duration because inertia after ignition switched off. 7637-1 specification test Pulses shown Figures used simulate nonrepetitive surge voltage.
Figure 7637-1, Test Pulse
Lightning produces transient surge voltage that cause significant damage electronic system. transient surge voltage caused either direct strike induced voltages currents that result from indirect strike. direct lightning strike requires very high energy device such discharge tube. indirect strike produces intense electric magnetic filed that
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AND8181/D
coupled into data power lines, producing surge voltage. indirect strike much lower energy level that absorbed diode. magnitude indirect strike depends distance from lightning strike. 61000-4-5 specification serves standard test verify immunity electronic system nonrepetitive surge such lightning. This specification categorized severity levels surge event location cables electronic system. surge voltage defined double exponential pulse with specified rise time duration decay time. double exponential waveform exponential rise peak measure rise time from exponential decay measured point. waveform, shown Figure rise time decay time Figure shows that NUP2105L provides immunity level that corresponds partially protected environment that representative most systems. applications that have data lines located cables outside building, crowbar shunting device such thyristor maybe required addition diode withstand indirect lightning strike.
PEAK PULSE CURRENT TIME (ms) Waveform Parameters 8x20 Surge Waveform 25°C IPP, PEAK CURRENT
CLAMPING VOLTAGE
Figure NUP2105L's Response 8/20 61000-4-5 Surge Test
Repetitive Surge Immunity
repetitive surge tests used test module's transient immunity from noise sources such inductive load switching, relay contact chatter ignition system noise. Repetitive switching transients coupled into data line cables because parasitic capacitance inductance inherent wiring harness. 7637-3 test pulses `b', along with 61000-4-4 specification used define repetitive surge immunity system. Repetitive surges also identified electrical fast transients (EFT) modeled recurring pattern burst high voltage spikes. Figures show 7637-3 pulse test waveforms, while Figure shows 61000-4-4 waveform.
Figure 61000-4-5 Surge Test
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AND8181/D
Voltage, Voltage Time Voltage Time
Parameters
tstart trepeat
Time
Figure 61000-4-4 Electrical Fast Transient (EFT)
Figure 7637-3 Test Pulse
ambient test temperature 7637 61000-4-X bench tests defined 23°C. NUP2105L array maximum power dissipation specified temperature 25°C. power rating device must derated operation elevated temperatures, shown Figure derating curve generally valid pulses occurring intervals approximately 1000 derating required longer pulse duration surges determined experimentally.
Voltage,
PERCENT DERATING Time
Parameters System)
TEMPERATURE (°C)
Figure Temperature Power Dissipation Derating NUP2505L
Figure 7637-3 Test Pulse
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Bibliography
References
Lepkowski, "AND8169 EMI/ESD Protection Solutions Bus". Semiconductor. 2004. "AN96-07, Transient Immunity Standards: 61000-4-X". Semtech. 2002.
Specifications
"ISO 7637-3, Vehicles with Nominal Supply Voltage Electrical Transient Transmission Capacitive Inductive Coupling Lines other Than Supply Lines". International Standard Organization. 1995.
Physical Layer Specifications
"IEC 61000-4-x, Electromagnetic Compatibility (EMC) Part Testing Measurement Techniques". International Electromechanical Commission. 2000. "ISO 7637-1, Passenger Cars Light Commercial Vehicles with Nominal Supply Voltage Electrical Transient Conduction along Supply Lines Only" International Standard Organization. 2002.
"DeviceNet Technical Overview". ODVA. 2004. Aug. 2004 <http://www.odva.org>. "ISO 11898-2, Road Vehicles Controller Area Network (CAN) Part High-Speed Medium Access Unit". International Standard Organization. 2003. "Smart Distributed System (SDS) Physical Layer Specification Version 2.0". Honeywell MICRO SWITCH. 1999.
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